Zobrazeno 1 - 10
of 44
pro vyhledávání: '"BOYAN BOYANOV"'
Publikováno v:
Journal of the Serbian Chemical Society, Vol 73, Iss 2, Pp 211-219 (2008)
The results of an investigation of the mechanism and kinetics of the oxidation process of synthetic a-NiS are presented in this paper. The mechanism of a-NiS oxidation was investigated based on the comparative analysis of DTA–TG–DTG and XRD resul
Externí odkaz:
https://doaj.org/article/127b9821e91c4a55853aaf001313d322
Publikováno v:
Journal of the Serbian Chemical Society, Vol 64, Iss 10, Pp 609-620 (1999)
In order to investigate the differences in the stability of the isomorphous pyridine saccharinates [Co(H2O)4(C5H5N)2](C7H4NO3S)2·H2O and [Ni(H2O)4(C5H5N)2[ (C7H4NO3S)2·4H2O, their thermal behavior (TG, DTG and DTA curves) from ambient temperature u
Externí odkaz:
https://doaj.org/article/c472cf5c4e8c4741b07f2277719fb5f7
Detection and Verification for the Presence of Stress by Means of Voice Analysis and Neural Networks
Autor:
Boyan Boyanov, Stefan Hadjitodorov
Publikováno v:
Engineering Sciences.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::716e8d8f14b9c366cc1eae9ac77aac9c
https://doi.org/10.7546/engsci.lvii.20.04.01
https://doi.org/10.7546/engsci.lvii.20.04.01
Publikováno v:
Thermochimica Acta. 586:9-16
Processing of sulfide concentrates with high iron content in the hydrometallurgy of zinc increases the amount of obtained cakes containing 15–20% Zn and 25–30% Fe. The main reason for this undesirable process is the presence of a part of the zinc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60c4d01a154482e41da2cb0325e6a512
https://doi.org/10.1016/j.tca.2014.04.005
https://doi.org/10.1016/j.tca.2014.04.005
Autor:
Yan Liu, Rui Cai, Junlan Wang, Minwei Sun, Boyan Boyanov, Christopher M. Lew, Yushan Yan, Grant M. Kloster
Publikováno v:
Angewandte Chemie. 121:4871-4874
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b5eb6ba44d8b0337720f3de8e203aa2
https://doi.org/10.1002/ange.200900461
https://doi.org/10.1002/ange.200900461
Autor:
Scott Hareland, Brian S. Doyle, Jack T. Kavalieros, Matthew V. Metz, Suman Datta, Mark L. Doczy, B. Jin, Boyan Boyanov, Robert S. Chau
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 19:1-5
Silicon transistors have undergone rapid miniaturization in the past several decades. Recently reported CMOS devices have dimensional scales approaching the “nano-transistor” regime. This paper discusses performance characteristics of a MOSFET de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3c24554e36c25b663c596d4d7e0370d
https://doi.org/10.1016/s1386-9477(03)00284-4
https://doi.org/10.1016/s1386-9477(03)00284-4
Publikováno v:
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 46:1512-1517
For pt. I see ibid., vol. 44, no. 3, p. 652-7 (1997). The method for analyzing surface transverse wave (STW) devices by using a coupling-of-modes (COM) formalism has been completed, covering the STW electromechanical coupling coefficient (ECC). An EC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14296c88e644cd64eb58ab336c56d4ea
https://doi.org/10.1109/58.808875
https://doi.org/10.1109/58.808875
Autor:
Eric B. Steel, Alline F. Myers, P. T. Goeller, Dale E. Sayers, Boyan Boyanov, Robert J. Nemanich
Publikováno v:
Journal of Materials Research. 14:4372-4384
Cobalt disilicide contacts to silicon–germanium alloys were formed by direct deposition of pure cobalt metal onto silicon–germanium films on Si(001) substrates. Segregation of germanium was observed during the reaction of the cobalt with the sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1287ae56ae7c96b4accbdc671d5dcff
https://doi.org/10.1557/jmr.1999.0592
https://doi.org/10.1557/jmr.1999.0592
Publikováno v:
Journal of Applied Physics. 86:1355-1362
A technique for achieving epitaxial growth of (001)-oriented CoSi2 on strained epitaxial layers of Si1−xGex(001) is described. The technique is based on a variation of the template method, and is designed to control the local environment of Co atom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a4f9773184b8bd18c6ab122b491206c
https://doi.org/10.1063/1.370894
https://doi.org/10.1063/1.370894
Publikováno v:
Journal of Applied Physics. 85:3614-3618
In order to study the influence of strain on the formation and stability of NiSi, Ni has been deposited on strained and relaxed Si(100) n-type substrates. Strained Si substrates have been produced by depositing a pseudomorphic silicon film onto a 300
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f49a5cd44cb61cc517ee358f200f57e0
https://doi.org/10.1063/1.369774
https://doi.org/10.1063/1.369774