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pro vyhledávání: '"BOOKER, G"'
Autor:
Chen, S., Parreno-Centeno, M., Verghese, G., Booker, G., Wall, I., Mohamed, F., Arsian, S., Raharja-Liu, P., Oozeer, A., D'Angelo, M., Barrow, R., Nelan, R., Sobral-Leite, M., Lips, E., de Martino, F., Brisken, C., Gillett, C., Jones, L., Pinder, S.E., Grigoriadis, A.
Publikováno v:
In ESMO Open May 2023 8(1) Supplement 4
Publikováno v:
In Computer Networks 2010 54(10):1683-1691
Akademický článek
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Autor:
Rizwan Nawaz, Booker G. K. Waya
Publikováno v:
Proceedings of the Institution of Civil Engineers - Water Management. 167:457-466
Current and future water demand pressures arising from inadequate supplies and forecasts of increased population in the UK have prompted the government and other stakeholders to set up strategies that will ensure sustainable water supplies. Demand-si
Publikováno v:
Scopus-Elsevier
An outline is given of a method for high resolution BSE analysis of chemical composition across interfaces in bulk semiconductor specimens. In this method the effects of electron beam diameter and beam spreading, which normally limit spatial resoluti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::4d71f21043b3e6f1e396f17a108e3645
https://ora.ox.ac.uk/objects/uuid:0b5ccc01-140f-4275-b713-febb5e22c234
https://ora.ox.ac.uk/objects/uuid:0b5ccc01-140f-4275-b713-febb5e22c234
Autor:
BOOKER, G, KLIPSTEIN, P, LAKRIMI, M, LYAPIN, S, MASON, N, MURGATROYD, I, NICHOLAS, R, SEONG, T, SYMONS, D, WALKER, P
InAs/GaSb strained layer superlattices (SLSs) have been grown by metalorganic vapour phase epitaxy (MOVPE) at atmospheric pressure. Initially the interfaces of the SLS have been biased towards pairs of GaAs or InSb using three different gas switching
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::cd242800c29d403fa8854062d3950224
https://doi.org/10.1016/0022-0248(94)00536-2
https://doi.org/10.1016/0022-0248(94)00536-2
Publikováno v:
Scopus-Elsevier
The EBIC contrast from extended defects in semiconductors can, in principle, be related to the defect capture cross-section for minority carriers and hence to the details of the recombination behaviour of individual defects. The monitoring of EBIC co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::8721f7df21c51646261c89ecdffa5588
https://ora.ox.ac.uk/objects/uuid:8f41dd20-2703-48ca-ae3b-1715feb99b85
https://ora.ox.ac.uk/objects/uuid:8f41dd20-2703-48ca-ae3b-1715feb99b85