Zobrazeno 1 - 10
of 35
pro vyhledávání: '"BO-HONG Li"'
Publikováno v:
Applied Sciences, Vol 14, Iss 3, p 1188 (2024)
Under net-zero objectives, the development of electric vehicle (EV) charging infrastructure on a densely populated island can be achieved by repurposing existing facilities, such as rooftops of wholesale stores and parking areas, into charging statio
Externí odkaz:
https://doaj.org/article/c6412812e75a4f1b9e2b2af2a513a378
Autor:
Hsien-Chin Chiu, Yi-Sheng Chang, Bo-Hong Li, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Wei Hu, Rong Xuan
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 201-206 (2018)
In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed. Compared to the standard (STD) p-GaN/AlGaN/GaN HEMT structure, the comp
Externí odkaz:
https://doaj.org/article/ad76f462abe444c888b25f5083f35c30
Autor:
Bo-Hong Li, 李柏鋐
105
Feature Envy is a code small indicating that a method (function) seems to be more interested in a class other than the one it is actually in. Such a method performs computations for another class, takes on responsibilities beyond its own, an
Feature Envy is a code small indicating that a method (function) seems to be more interested in a class other than the one it is actually in. Such a method performs computations for another class, takes on responsibilities beyond its own, an
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/e2h88q
Autor:
BO-HONG Li, 李柏宏
101
This research aims to investigate the application of the LTE (Long Term Evolution) of multi-antenna system on LTE Smartphones. The thesis is divided into three parts. a.) The evaluation of the practicability on the placement of the LTE anten
This research aims to investigate the application of the LTE (Long Term Evolution) of multi-antenna system on LTE Smartphones. The thesis is divided into three parts. a.) The evaluation of the practicability on the placement of the LTE anten
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/85040141086863925007
Autor:
Bo-Hong Li, 李柏宏
95
Photovoltaic (PV) is one of the most widely used devices among the renewable energies. It is important to operate PV energy conversion systems near the maximum power point (MPP) to increase the output efficiency of PV arrays. The radial basis
Photovoltaic (PV) is one of the most widely used devices among the renewable energies. It is important to operate PV energy conversion systems near the maximum power point (MPP) to increase the output efficiency of PV arrays. The radial basis
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/44401792914894235977
Autor:
Kuang-Po Hsueh, Hsien-Chin Chiu, Hsiang-Chun Wang, Bo-Hong Li, Rong Xuan, Yi-Sheng Chang, Chih-Wei Hu
Publikováno v:
Materials Science in Semiconductor Processing. 90:107-111
AlGaN/GaN Schottky barrier diodes (SBDs) combined with a dual anode metal (ohmic and Schottky contacts) and a p-GaN layer were studied for improving the reverse breakdown voltage (VBR) and reducing the turn-on voltage (VON). Structures with various d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a54c89f3067202882dc36a3b030e0a5a
https://doi.org/10.1016/j.mssp.2018.10.013
https://doi.org/10.1016/j.mssp.2018.10.013
Autor:
Jing-Wen Hsueh, Lai-Hsiang Kuo, Po-Han Chen, Wan-Hsin Chen, Chi-Yao Chuang, Chia-Nung Kuo, Chin-Shan Lue, Yu-Ling Lai, Bo-Hong Liu, Chia-Hsin Wang, Yao-Jane Hsu, Chun-Liang Lin, Jyh-Pin Chou, Meng-Fan Luo
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-13 (2024)
Abstract Transition metal dichalcogenides, by virtue of their two-dimensional structures, could provide the largest active surface for reactions with minimal materials consumed, which has long been pursued in the design of ideal catalysts. Neverthele
Externí odkaz:
https://doaj.org/article/689d5f4e22384afba7e9ed409c91251f
Publikováno v:
IEEE Access, Vol 12, Pp 30976-30988 (2024)
Dispersion in optical coherence tomography (OCT) poses a challenge that is exacerbated by the increased spectral bandwidth, which leads to image blur and feature loss. In this paper, we present a straightforward and cost-effective approach for disper
Externí odkaz:
https://doaj.org/article/00025de0a07740179dc368bd20cfea34
Autor:
Hsuan-Ling Kao, Chih-Wei Hu, Hsiang-Chun Wang, Bo-Hong Li, Feng-Tso Chien, Hsien-Chin Chiu, Rong Xuan, Yi-Sheng Chang
Publikováno v:
IEEE Transactions on Electron Devices. 65:4820-4825
A normally-OFF p-GaN gate AlGaN/GaN high-electron-mobility transistor with high ON-state resistance ( ${R}_{ \mathrm{\scriptscriptstyle ON}}$ ) uniformity was realized using a self-terminated digital etching technique. ${R}_{ \mathrm{\scriptscriptsty
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b490f012a56f60d23f3dc073671a51b
https://doi.org/10.1109/ted.2018.2871689
https://doi.org/10.1109/ted.2018.2871689
Autor:
Bo-Hong Li, Hou-Yu Wang, Kuang-Po Hsueh, Li-Yi Peng, Hsiang-Chun Wang, Jiun-Wei Chiu, Hsien-Chin Chiu, Shang-Cyun Chen
Publikováno v:
Microelectronics Reliability. 83:238-241
This study demonstrated AlGaN/GaN Schottky barrier diodes (SBDs) for use in high-frequency, high-power, and high-temperature electronics applications. Four structures with various Fe doping concentrations in the buffer layers were investigated to sup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2347a9846bc5e8c74389314745e2bca1
https://doi.org/10.1016/j.microrel.2017.05.034
https://doi.org/10.1016/j.microrel.2017.05.034