Zobrazeno 1 - 10
of 40
pro vyhledávání: '"BO-HONG Li"'
Publikováno v:
Applied Sciences, Vol 14, Iss 3, p 1188 (2024)
Under net-zero objectives, the development of electric vehicle (EV) charging infrastructure on a densely populated island can be achieved by repurposing existing facilities, such as rooftops of wholesale stores and parking areas, into charging statio
Externí odkaz:
https://doaj.org/article/c6412812e75a4f1b9e2b2af2a513a378
Autor:
Hsien-Chin Chiu, Yi-Sheng Chang, Bo-Hong Li, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Wei Hu, Rong Xuan
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 201-206 (2018)
In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed. Compared to the standard (STD) p-GaN/AlGaN/GaN HEMT structure, the comp
Externí odkaz:
https://doaj.org/article/ad76f462abe444c888b25f5083f35c30
Autor:
Kuang-Po Hsueh, Hsien-Chin Chiu, Hsiang-Chun Wang, Bo-Hong Li, Rong Xuan, Yi-Sheng Chang, Chih-Wei Hu
Publikováno v:
Materials Science in Semiconductor Processing. 90:107-111
AlGaN/GaN Schottky barrier diodes (SBDs) combined with a dual anode metal (ohmic and Schottky contacts) and a p-GaN layer were studied for improving the reverse breakdown voltage (VBR) and reducing the turn-on voltage (VON). Structures with various d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a54c89f3067202882dc36a3b030e0a5a
https://doi.org/10.1016/j.mssp.2018.10.013
https://doi.org/10.1016/j.mssp.2018.10.013
Autor:
Hsuan-Ling Kao, Chih-Wei Hu, Hsiang-Chun Wang, Bo-Hong Li, Feng-Tso Chien, Hsien-Chin Chiu, Rong Xuan, Yi-Sheng Chang
Publikováno v:
IEEE Transactions on Electron Devices. 65:4820-4825
A normally-OFF p-GaN gate AlGaN/GaN high-electron-mobility transistor with high ON-state resistance ( ${R}_{ \mathrm{\scriptscriptstyle ON}}$ ) uniformity was realized using a self-terminated digital etching technique. ${R}_{ \mathrm{\scriptscriptsty
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b490f012a56f60d23f3dc073671a51b
https://doi.org/10.1109/ted.2018.2871689
https://doi.org/10.1109/ted.2018.2871689
Autor:
Bo-Hong Li, Hou-Yu Wang, Kuang-Po Hsueh, Li-Yi Peng, Hsiang-Chun Wang, Jiun-Wei Chiu, Hsien-Chin Chiu, Shang-Cyun Chen
Publikováno v:
Microelectronics Reliability. 83:238-241
This study demonstrated AlGaN/GaN Schottky barrier diodes (SBDs) for use in high-frequency, high-power, and high-temperature electronics applications. Four structures with various Fe doping concentrations in the buffer layers were investigated to sup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2347a9846bc5e8c74389314745e2bca1
https://doi.org/10.1016/j.microrel.2017.05.034
https://doi.org/10.1016/j.microrel.2017.05.034
Autor:
Kuang-Po Hsueh, Feng-Tso Chien, Hsien-Chin Chiu, Bo-Hong Li, Hsiang-Chun Wang, Shang-Cyun Chen, Jiun-Wei Chiu
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:N177-N181
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7215c3c4689e5af1236b66e429a5c5e9
https://doi.org/10.1149/2.0081710jss
https://doi.org/10.1149/2.0081710jss
Publikováno v:
COMPSAC (2)
Feature Envy is a code smell indicating that a particular class is showing too much interest in the methods/attributes of another class. Several feature-envy detection approaches have been proposed. However, these approaches consider an entire method
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c6698797545cd557eb79cb45af90342
https://doi.org/10.1109/compsac.2018.10196
https://doi.org/10.1109/compsac.2018.10196
Autor:
Bo-Hong Li, 李柏鋐
105
Feature Envy is a code small indicating that a method (function) seems to be more interested in a class other than the one it is actually in. Such a method performs computations for another class, takes on responsibilities beyond its own, an
Feature Envy is a code small indicating that a method (function) seems to be more interested in a class other than the one it is actually in. Such a method performs computations for another class, takes on responsibilities beyond its own, an
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/e2h88q
Publikováno v:
Xiao, S, Zhu, X, Li, B-H & Mortensen, N A 2016, ' Graphene-plasmon polaritons: from fundamental properties to potential applications [arXiv] ', Frontiers of Physics, vol. 11, no. 2 . https://doi.org/10.1007/s11467-016-0551-z
Xiao, S, Zhu, X, Li, B-H & Mortensen, N A 2016, ' Graphene-plasmon polaritons: From fundamental properties to potential applications ' Frontiers of Physics, vol 11, no. 2, 117801 . DOI: 10.1007/s11467-016-0551-z
Xiao, S, Zhu, X, Li, B-H & Mortensen, N A 2016, ' Graphene-plasmon polaritons: From fundamental properties to potential applications ' Frontiers of Physics, vol 11, no. 2, 117801 . DOI: 10.1007/s11467-016-0551-z
With the unique possibilities for controlling light in nanoscale devices, graphene plasmonics has opened new perspectives to the nanophotonics community with potential applications in metamaterials, modulators, photodetectors, and sensors. This paper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::548e93ada9b3d50719ae0943e4a47c85