Zobrazeno 1 - 3
of 3
pro vyhledávání: '"BL-enhancing schemes"'
Autor:
Donglin Zhang, Bo Peng, Yulin Zhao, Zhongze Han, Qiao Hu, Xuanzhi Liu, Yongkang Han, Honghu Yang, Jinhui Cheng, Qingting Ding, Haijun Jiang, Jianguo Yang, Hangbing Lv
Publikováno v:
Micromachines, Vol 12, Iss 8, p 913 (2021)
Resistive random access memory (RRAM) is one of the most promising new nonvolatile memories because of its excellent properties. Moreover, due to fast read speed and low work voltage, it is suitable for seldom-write frequent-read applications. Howeve
Externí odkaz:
https://doaj.org/article/0791061855f14b41b4be7315658220b4
Autor:
Qiao Hu, Bo Peng, Haijun Jiang, Hangbing Lv, Donglin Zhang, Jianhua Yang, Zhongze Han, Yulin Zhao, Qingting Ding, Honghu Yang, Xuanzhi Liu, Jinhui Cheng, Yongkang Han
Publikováno v:
Micromachines
Micromachines, Vol 12, Iss 913, p 913 (2021)
Micromachines, Vol 12, Iss 913, p 913 (2021)
Resistive random access memory (RRAM) is one of the most promising new nonvolatile memories because of its excellent properties. Moreover, due to fast read speed and low work voltage, it is suitable for seldom-write frequent-read applications. Howeve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b39fb4115016a159dfd6fc5b39a7cf0c
https://doi.org/10.3390/mi12080913
https://doi.org/10.3390/mi12080913
Akademický článek
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