Zobrazeno 1 - 10
of 1 277
pro vyhledávání: '"BJT"'
Publikováno v:
IEEE Photonics Journal, Vol 16, Iss 4, Pp 1-7 (2024)
This paper introduces a new device concept and outlines the fabrication process of a bipolar junction transistor based on an IGZO/NiO/PbSe nanoband array heterostructure. We performed comprehensive electrical property testing and characterization ana
Externí odkaz:
https://doaj.org/article/c2919c7a2797415b9710abbe22525a50
Autor:
Rinku Rani Das, Alex James
Publikováno v:
IEEE Access, Vol 12, Pp 462-470 (2024)
Multi-channel FinFET ( $\text{M}_{\textbf {ch}}$ -FinFET) is an emerging device having promising use due to its excellent driving capability. In this paper, we have investigated the significance of multiple channels of FinFET configuration. We have e
Externí odkaz:
https://doaj.org/article/f7fd11d1dcfc41b8a302f2e7e9a33090
Autor:
Linta Khalil, Kamran Liaquat Bhatti, Kiran Khalil, Haider Bin Tariq, Salman Khalil, Muhammad Zahid Shafique
Publikováno v:
Energy Reports, Vol 9, Iss , Pp 151-157 (2023)
The high-frequency standard magnetic links were recently considered viable candidates for construction of the medium-voltage power converters, rather than link with the common dc specialized magnetic materials, like nano-crystalline and the amorphous
Externí odkaz:
https://doaj.org/article/f8e4fe91cc45452885e241dbaabbe7ec
Publikováno v:
Rapid Prototyping Journal, 2023, Vol. 29, Issue 7, pp. 1499-1509.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/RPJ-08-2022-0264
Publikováno v:
e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 7, Iss , Pp 100412- (2024)
The high-voltage SiC MOSFET power modules enable high-frequency and high-efficiency power conversion. The parasitic inductances induced by traditional packages of this device technology significantly deteriorate device switching performance, especial
Externí odkaz:
https://doaj.org/article/c1d95a37e46d4234a868593988cd2516
Autor:
Wyrzykowski, Mateusz
Publikováno v:
Wrocławski Przegląd Teologiczny / Wrocław Theological Review. 30(2):31-46
Externí odkaz:
https://www.ceeol.com/search/article-detail?id=1095982
Autor:
Xiaonian Liu, Zichen Yang
Publikováno v:
IEEE Access, Vol 11, Pp 86480-86488 (2023)
Bipolar junction transistors (BJT) are widely used integrated devices for analog circuits. For most of analog applications, the process variation and the match performance of BJT pairs are critical for the circuit design. Vertical BJT device has adva
Externí odkaz:
https://doaj.org/article/7f2515aa205146f4b139701a370066db
Autor:
Kyeongjun Kim, Seonghearn Lee
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 354-358 (2023)
The origin of a greater decrease in kink drain voltage $V_{kink}$ in floating body PD-SOI MOSFETs with gate lengths shorter than $0.35 ~\mu m$ is newly revealed. The $V_{kink}$ formula as a function of the internal body voltage and $I_{DS}$ is derive
Externí odkaz:
https://doaj.org/article/40d021386a224f9796e37a026a18f419
Publikováno v:
IEEE Access, Vol 11, Pp 60758-60762 (2023)
The snapback breakdown behavior of multi-finger MOSFETs was investigated using a device simulation. It is shown that snapback breakdown voltage (SNBV) varies depending on the source/drain configuration, even with the same two-finger structure. This r
Externí odkaz:
https://doaj.org/article/e16af94ec46e42ccbb240aac17e8f33a
Publikováno v:
Energy Reports, Vol 8, Iss , Pp 710-720 (2022)
As a current driven power device, SiC BJT needs effective driving scheme, but the present schemes are either complicated or not parameter optimized. In this paper we give an optimized parameter design method based on dual power supply RC driving circ
Externí odkaz:
https://doaj.org/article/48b559450bc440e4b2483f113b467b5a