Zobrazeno 1 - 10
of 3 967
pro vyhledávání: '"BIMBERG, D."'
The feasibility of the QD-Flash concept, its fast write and erase times, is demonstrated together with storage times of 4 days at room temperature. The storage time of holes in (InGa)Sb QDs embedded in a (AlGa)P matrix can be extended by growth modif
Externí odkaz:
https://tud.qucosa.de/id/qucosa%3A76951
https://tud.qucosa.de/api/qucosa%3A76951/attachment/ATT-0/
https://tud.qucosa.de/api/qucosa%3A76951/attachment/ATT-0/
Autor:
Pomplun, J., Burger, S., Schmidt, F., Schliwa, A., Bimberg, D., Pietrzak, A., Wenzel, H., Erbert, G.
Publikováno v:
Phys. Status Solidi B 247, No. 4, 846-853 (2010)
In the present article we investigate optical near fields in semiconductor lasers. We perform finite element simulations for two different laser types, namely a super large optical waveguide (SLOW) laser, which is an edge emitter, and a vertical cavi
Externí odkaz:
http://arxiv.org/abs/1011.6244
Publikováno v:
Phys. Rev. Lett. 105, 257401 (2010)
We image the micro-electroluminescence (EL) spectra of self-assembled InAs quantum dots (QDs) embedded in the intrinsic region of a GaAs p-i-n diode and demonstrate optical detection of resonant carrier injection into a single QD. Resonant tunneling
Externí odkaz:
http://arxiv.org/abs/1007.2733
We derive an energy-dependent decay-time distribution function from the multi-exponential decay of the ensemble photoluminescence (PL) of InGaN/GaN quantum dots (QDs), which agrees well with recently published single-QD time-resolved PL measurements.
Externí odkaz:
http://arxiv.org/abs/0807.5056
Publikováno v:
J. Phys.: Condens. Matter 20, 454211 (2008)
We study theoretically the electronic properties of $c$-plane GaN/AlN quantum dots (QDs) with focus on their potential as sources of single polarized photons for future quantum communication systems. Within the framework of eight-band k.p theory we c
Externí odkaz:
http://arxiv.org/abs/0807.5024
Publikováno v:
Appl. Phys. Lett. 92, 063116 (2008)
Systematic time-resolved measurements on neutral and charged excitonic complexes (X, XX, X+, and XX+) of 26 different single InAs/GaAs quantum dots are reported. The ratios of the decay times are discussed in terms of the number of transition channel
Externí odkaz:
http://arxiv.org/abs/0802.1010
Autor:
Winkelnkemper, M., Seguin, R., Rodt, S., Schliwa, A., Reissmann, L., Strittmatter, A., Hoffmann, A., Bimberg, D.
Publikováno v:
Physica E 40, 2217 (2008)
We present a study of the polarization properties of emission lines from single InGaN/GaN quantum dots (QDs). The QDs, formed by spinodal decomposition within ultra-thin InGaN quantum wells, are investigated using single-QD cathodoluminescence (CL).
Externí odkaz:
http://arxiv.org/abs/0711.3381
Photoluminescence spectra measured on a type-II GaSb/GaAs quantum dot ensemble at high excitation power indicate a Mott transition from the low density state comprising of spatially-indirect excitons to a high density electron-plasma state. Under the
Externí odkaz:
http://arxiv.org/abs/0706.1972
Autor:
Winkelnkemper, M., Seguin, R., Rodt, S., Schliwa, A., Reissmann, L., Strittmatter, A., Hoffmann, A., Bimberg, D.
Publikováno v:
J. Appl. Phys. 101, 113708 (2007)
Cathodoluminescence measurements on single InGaN/GaN quantum dots (QDs) are reported. Complex spectra with up to five emission lines per QD are observed. The lines are polarized along the orthogonal crystal directions [1 1 -2 0] and [-1 1 0 0]. Reali
Externí odkaz:
http://arxiv.org/abs/0705.3595
Autor:
Seguin, R., Schliwa, A., Germann, T. D., Rodt, S., Winkelnkemper, M., Pötschke, K., Strittmatter, A., Pohl, U. W., Hammerschmidt, T., Kratzer, P., Bimberg, D.
Publikováno v:
Appl. Phys. Lett. 89, 263109 (2006)
A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are recorded to trace the evolution of one and the same QD over several steps of ann
Externí odkaz:
http://arxiv.org/abs/cond-mat/0701031