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Akademický článek
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Publikováno v:
IEEE Access, Vol 12, Pp 160614-160624 (2024)
In this paper, a planar Marchand balun and its modification version are analyzed and designed on the standard lossy silicon substrate of $10~\Omega $ -cm resistivity. The analysis shows that both Marchand balun’s outputs are always equal in magnitu
Externí odkaz:
https://doaj.org/article/3b224b2043a04b0ea61285c3f07b966c
Publikováno v:
IEEE Journal of Microwaves, Vol 4, Iss 4, Pp 742-748 (2024)
A fully integrated millimeter-wave power amplifier has been designed and fabricated using a 0.13 μm SiGe BiCMOS process technology. The design is based on extracting device parasitics and utilizing them in a matching network based on a bandpass topo
Externí odkaz:
https://doaj.org/article/f7506a80008e4595a0b1ba278ac9f028
Autor:
Florian Vogelsang, Jonathan Bott, David Starke, Christian Bredendiek, Klaus Aufinger, Nils Pohl
Publikováno v:
IEEE Journal of Microwaves, Vol 4, Iss 3, Pp 360-371 (2024)
As the use of integrated radar sensors is becoming more common not only in traditional military and automotive but also in medical and industrial applications, the requirements for a radar sensor diversify. For some applications, bandwidth is critica
Externí odkaz:
https://doaj.org/article/3fb3ff34aeab493fa6fbcbec6a714e1f
Compact, High-Speed Mach-Zehnder Modulator With On-Chip Linear Drivers in Photonic BiCMOS Technology
Publikováno v:
IEEE Access, Vol 12, Pp 64561-64570 (2024)
A monolithically integrated electronic-photonic Mach-Zehnder modulator is presented, incorporating electronic linear drivers along with photonic components. Electro-optical 3 dB & 6 dB bandwidths of 24 GHz and 34 GHz, respectively, were measured. The
Externí odkaz:
https://doaj.org/article/d1ec8adca49240bb92fa6d89bdbda916
Publikováno v:
IEEE Journal of Microwaves, Vol 4, Iss 2, Pp 264-276 (2024)
This article compares two SiGe Colpitts quadrature voltage-controlled oscillators (QVCO) with different coupling techniques in the low E-Band, intended to be used as signal sources for push-push frequency doublers. The first QVCO is based on a cross-
Externí odkaz:
https://doaj.org/article/7ac58f6b6da94a1fa432b7246770e3db
Publikováno v:
IEEE Journal of Microwaves, Vol 4, Iss 1, Pp 101-110 (2024)
Wireless communication and sensing applications seek higher frequencies to enable higher data rates or more precise localization using a wider modulation bandwidth. Particularly, 6G and autonomous driving research projects focus on the D-band. With h
Externí odkaz:
https://doaj.org/article/bd3d5762b21646d3baf2cda2a8fb92a6
Publikováno v:
Sensors, Vol 24, Iss 23, p 7598 (2024)
It is shown that the integration of a single-photon avalanche diode (SPAD) together with a BiCMOS gating circuit on one chip reduces the parasitic capacitance a lot and therefore reduces the avalanche build-up time. The capacitance of two bondpads, w
Externí odkaz:
https://doaj.org/article/075e0641aba74e90ad8572d4f78a9601
Publikováno v:
Micromachines, Vol 15, Iss 10, p 1248 (2024)
This paper presents a compact V-band low-noise amplifier (LNA) featuring temperature compensation, implemented in a 130 nm SiGe BiCMOS process. A negative temperature coefficient bias circuit generates an adaptive current for temperature compensation
Externí odkaz:
https://doaj.org/article/eb5b116552804aef81da921a63817e94
Autor:
LIN Shaoheng
Publikováno v:
Guangtongxin yanjiu, Pp 57-63 (2023)
【Objective】For the implementation of Trans Impedance Amplifier (TIA) in 400 Gbit/s Dual Polarization (DP)– 16 Quadrature Amplitude Modulation (QAM) coherent receiver.【Methods】A 64 GBaud dual channels differential linear TIA in advanced Sili
Externí odkaz:
https://doaj.org/article/db6feb1a1d344ed181cc99a52b88f404