Zobrazeno 1 - 10
of 16 763
pro vyhledávání: '"BERTRAND B"'
Autor:
Yogesh K. Ahlawat, Ajaya K. Biswal, Sarahani Harun, Anne E. Harman-Ware, Crissa Doeppke, Nisha Sharma, Chandrashekhar P. Joshi, Bertrand B. Hankoua
Publikováno v:
Biotechnology for Biofuels and Bioproducts, Vol 17, Iss 1, Pp 1-14 (2024)
Abstract Background Secondary cell wall holds considerable potential as it has gained immense momentum to replace the lignocellulosic feedstock into fuels. Lignin one of the components of secondary cell wall tightly holds the polysaccharides thereby
Externí odkaz:
https://doaj.org/article/fe0428a1e9c641d19dab0ed71afee13c
Publikováno v:
JGH Open, Vol 6, Iss 8, Pp 554-568 (2022)
Abstract Background and Aim There have been contradictory reports about the association between Helicobacter pylori infection and iron deficiency anemia (IDA). Based on the high frequency of H. pylori infection in Cameroon, we have evaluated the freq
Externí odkaz:
https://doaj.org/article/4f6f33f78a0a4da49f3f235277ebeebf
Autor:
Ayalew Ligaba-Osena, Wanli Guo, Sang Chul Choi, Matthew Alan Limmer, Angelia L. Seyfferth, Bertrand B. Hankoua
Publikováno v:
Frontiers in Plant Science, Vol 11 (2020)
Silicon (Si) is one of the beneficial plant mineral nutrients which is known to improve biotic and abiotic stress resilience and productivity in several crops. However, its beneficial role in underutilized or “orphan” crop such as tef [Eragrostis
Externí odkaz:
https://doaj.org/article/75974dc9fde74c46a403b639cf2b0928
Autor:
Ayalew Ligaba-Osena, Jenna Jones, Emmanuel Donkor, Sanjeev Chandrayan, Farris Pole, Chang-Hao Wu, Claire Vieille, Michael W. W. Adams, Bertrand B. Hankoua
Publikováno v:
Frontiers in Plant Science, Vol 9 (2018)
To address national and global low-carbon fuel targets, there is great interest in alternative plant species such as cassava (Manihot esculenta), which are high-yielding, resilient, and are easily converted to fuels using the existing technology. In
Externí odkaz:
https://doaj.org/article/633b6f24145e46f399a68a9c7354fb0b
Autor:
Jacquinot, H., Maurand, R., Bada, G. Troncoso Fernandez, Bertrand, B., Cassé, M., Niquet, Y. M., de Franceschi, S., Meunier, T., Vinet, M.
In this paper, we report on simulations of an Electron Spin Resonance (ESR) RF control line for semiconductor electron spin qubits. The simulation includes both the ESR line characteristics (geometry and configuration, stack and material properties)
Externí odkaz:
http://arxiv.org/abs/2304.03705
Autor:
Oakes, G. A., Peri, L., Cochrane, L., Martins, F., Hutin, L., Bertrand, B., Vinet, M., Saiz, A. Gomez, Ford, C. J. B., Smith, C. G., Gonzalez-Zalba, M. F.
Silicon offers the enticing opportunity to integrate hybrid quantum-classical computing systems on a single platform. For qubit control and readout, high-frequency signals are required. Therefore, devices that can facilitate its generation are needed
Externí odkaz:
http://arxiv.org/abs/2211.14127
Autor:
Oakes, G. A., Ciriano-Tejel, V. N., Wise, D., Fogarty, M. A., Lundberg, T., Lainé, C., Schaal, S., Martins, F., Ibberson, D. J., Hutin, L., Bertrand, B., Stelmashenko, N., Robinson, J. A. W., Ibberson, L., Hashim, A., Siddiqi, I., Lee, A., Vinet, M., Smith, C. G., Morton, J. J. L., Gonzalez-Zalba, M. F.
Three key metrics for readout systems in quantum processors are measurement speed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit measurements, a necessary feature for many dynamic algorithms and quantum error correction, whil
Externí odkaz:
http://arxiv.org/abs/2203.06608
Autor:
Piot, N., Brun, B., Schmitt, V., Zihlmann, S., Michal, V. P., Apra, A., Abadillo-Uriel, J. C., Jehl, X., Bertrand, B., Niebojewski, H., Hutin, L., Vinet, M., Urdampilleta, M., Meunier, T., Niquet, Y. -M., Maurand, R., De Franceschi, S.
Publikováno v:
Nature Nanotechnology 17, 1072-1077 (2022)
Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally vulnerable to
Externí odkaz:
http://arxiv.org/abs/2201.08637
Autor:
Gonzalez-Garcia, M., Bertrand, B., Martell-Huguet, EM, Espinosa-Romero, JF, Vázquez, RF, Morales –Vicente, F., Rosenau, F., Standker, LH, Franco, OL, Otero-Gonzalez, AJ, Muñoz-Garay, C
Publikováno v:
In Peptides December 2024 182
Autor:
Voisin, B., Ng, K. S. H., Salfi, J., Usman, M., Wong, J. C., Tankasala, A., Johnson, B. C., McCallum, J. C., Hutin, L., Bertrand, B., Vinet, M., Valanoor, N., Simmons, M. Y., Rahman, R., Hollenberg, L. C. L., Rogge, S.
Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valley degeneracy of the six conduction band minima, and by extension the v
Externí odkaz:
http://arxiv.org/abs/2109.08540