Zobrazeno 1 - 10
of 1 026
pro vyhledávání: '"BELTRAM, Fabio"'
Autor:
Sabattini, Leonardo, Coriolano, Annalisa, Casert, Corneel, Forti, Stiven, Barnard, Edward S., Beltram, Fabio, Pontil, Massimiliano, Whitelam, Stephen, Coletti, Camilla, Rossi, Antonio
Two-dimensional (2D) materials are poised to revolutionize current solid-state technology with their extraordinary properties. Yet, the primary challenge remains their scalable production. While there have been significant advancements, much of the s
Externí odkaz:
http://arxiv.org/abs/2410.10885
Autor:
Prete, Domenic, Demontis, Valeria, Zannier, Valentina, Sorba, Lucia, Beltram, Fabio, Rossella, Francesco
Achieving stable, high-quality quantum dots has proven challenging within device architectures rooted in conventional solid-state device fabrication paradigms. In fact, these are grappled with complex protocols in order to balance ease of realization
Externí odkaz:
http://arxiv.org/abs/2406.16363
Autor:
Boschi, Alex, Gebeyehu, Zewdu M., Slizovskiy, Sergey, Mišeikis, Vaidotas, Forti, Stiven, Rossi, Antonio, Watanabe, Kenji, Taniguchi, Takashi, Beltram, Fabio, Fal'ko, Vladimir I., Coletti, Camilla, Pezzini, Sergio
Atomically thin materials offer multiple opportunities for layer-by-layer control of their electronic properties. While monolayer graphene (MLG) is a zero-gap system, Bernal-stacked bilayer graphene (BLG) acquires a finite band gap when the symmetry
Externí odkaz:
http://arxiv.org/abs/2406.04732
Autor:
Melchioni, Nicola, Trupiano, Giacomo, Tofani, Giorgio, Bertini, Riccardo, Mezzetta, Andrea, Bianco, Federica, Guazzelli, Lorenzo, Beltram, Fabio, Pomelli, Christian Silvio, Roddaro, Stefano, Tredicucci, Alessandro, Paolucci, Federico
Publikováno v:
Appl. Phys. Lett. 122, 243505 (2023)
Controlling the charge density in low-dimensional materials with an electrostatic potential is a powerful tool to explore and influence their electronic and optical properties. Conventional solid gates impose strict geometrical constraints to the dev
Externí odkaz:
http://arxiv.org/abs/2304.06383
Autor:
Peri, Lorenzo, Prete, Domenic, Demontis, Valeria, Zannier, Valentina, Rossi, Francesca, Sorba, Lucia, Beltram, Fabio, Rossella, Francesco
Semiconductor nanostructures hold great promise for high-efficiency waste heat recovery exploiting thermoelectric energy conversion, a technological breakthrough that could significantly contribute to providing environmentally friendly energy sources
Externí odkaz:
http://arxiv.org/abs/2205.05757
Autor:
Carretta, Annalisa, Moscardini, Aldo, Signore, Giovanni, Debellis, Doriana, Catalano, Federico, Marotta, Roberto, Palmieri, Valentina, Tedeschi, Giulia, Scipioni, Lorenzo, Pozzi, Daniela, Caracciolo, Giulio, Beltram, Fabio, Cardarelli, Francesco
Publikováno v:
In Molecular Therapy: Oncology 19 September 2024 32(3)
Autor:
Kumar, Abhishek, Telesio, Francesca, Prezzi, Deborah, Cardoso, Claudia, Catellani, Alessandra, Forti, Stiven, Coletti, Camilla, Serrano-Ruiz, Manuel, Peruzzini, Maurizio, Beltram, Fabio, Heun, Stefan
Publikováno v:
J. Phys. Chem. C 2021, 125, 13477-13484
We study surface charge transfer doping of exfoliated black phosphorus (bP) flakes by copper using scanning tunneling microscopy (STM) and spectroscopy (STS) at room temperature. The tunneling spectra reveal a gap in correspondence of Cu islands, whi
Externí odkaz:
http://arxiv.org/abs/2201.00610
Autor:
Verma, Isha, Salimian, Sedighe, Zannier, Valentina, Heun, Stefan, Rossi, Francesca, Ercolani, Daniele, Beltram, Fabio, Sorba, Lucia
Publikováno v:
ACS Appl. Nano Mater. 2021, 4, 5825-5833
High quality heteroepitaxial two-dimensional (2D) InSb layers are very difficult to realize owing to the large lattice mismatch with other widespread semiconductor substrates. A way around this problem is to grow free-standing 2D InSb nanostructures
Externí odkaz:
http://arxiv.org/abs/2111.03052
Autor:
Salimian, Sedighe, Carrega, Matteo, Verma, Isha, Zannier, Valentina, Nowak, Michal P., Beltram, Fabio, Sorba, Lucia, Heun, Stefan
Publikováno v:
Appl. Phys. Lett. 119, 214004 (2021)
High-quality III-V narrow band gap semiconductor materials with strong spin-orbit coupling and large Lande g-factor provide a promising platform for next-generation applications in the field of high-speed electronics, spintronics, and quantum computi
Externí odkaz:
http://arxiv.org/abs/2111.01695
Autor:
Tyagi, Ayush, Mišeikis, Vaidotas, Martini, Leonardo, Forti, Stiven, Mishra, Neeraj, Gebeyehu, Zewdu M., Giambra, Marco A., Zribi, Jihene, Frégnaux, Mathieu, Aureau, Damien, Romagnoli, Marco, Beltram, Fabio, Coletti, Camilla
Graphene grown via chemical vapour deposition (CVD) on copper foil has emerged as a high-quality, scalable material, that can be easily integrated on technologically relevant platforms to develop promising applications in the fields of optoelectronic
Externí odkaz:
http://arxiv.org/abs/2109.00308