Zobrazeno 1 - 10
of 597
pro vyhledávání: '"BAUGH, J."'
Autor:
Harrigan, S. R., Sfigakis, F., Tian, L., Sherlekar, N., Cunard, B., Tam, M. C., Kim, H. -S., Wasilewski, Z., Reimer, M. E., Baugh, J.
We report on a stable form of pulsed electroluminescence in a dopant-free direct bandgap semiconductor heterostructure that we coin the tidal effect. Swapping an inducing gate voltage in an ambipolar field effect transistor allows incoming and outgoi
Externí odkaz:
http://arxiv.org/abs/2407.12714
Autor:
Bergeron, E. Annelise, Sfigakis, F., Elbaroudy, A., Jordan, A. W. M., Thompson, F., Nichols, George, Shi, Y., Tam, Man Chun, Wasilewski, Z. R., Baugh, J.
We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in 24 nm wide indium arsenide surface quantum wells. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are obse
Externí odkaz:
http://arxiv.org/abs/2405.14138
Autor:
Elbaroudy, A., Khromets, B., Sfigakis, F., Bergeron, E., Shi, Y., Tam, M. C. A., Blaikie, T., Nichols, George, Baugh, J., Wasilewski, Z. R.
Among superconductor/semiconductor hybrid structures, in-situ aluminum (Al) grown on InGaAs/InAs is widely pursued for the experimental realization of Majorana Zero Mode quasiparticles. This is due to the high carrier mobility, low effective mass, an
Externí odkaz:
http://arxiv.org/abs/2401.15341
Autor:
Bergeron, E. Annelise, Sfigakis, F., Shi, Y., Nichols, George, Klipstein, P. C., Elbaroudy, A., Walker, Sean M., Wasilewski, Z. R., Baugh, J.
Publikováno v:
Applied Physics Letters 122, 012103 (2023)
We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in surface indium antimonide quantum wells. The topmost 5 nm of the 30 nm wide quantum well is doped and shown to promote the formation of reliable, low resi
Externí odkaz:
http://arxiv.org/abs/2209.08193
Autor:
Buonacorsi, B., Sfigakis, F., Shetty, A., Tam, M. C., Kim, H. S., Harrigan, S. R., Hohls, F., Reimer, M. E., Wasilewski, Z. R., Baugh, J.
Publikováno v:
Applied Physics Letters 119, 114001 (2021)
We have realized quantized charge pumping using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases (2DEGs). The dopant-free III-V platform allows for ambipolar devices, such as p-i-n junctions, that could be combin
Externí odkaz:
http://arxiv.org/abs/2102.13320
Autor:
Shetty, A., Sfigakis, F., Mak, W. Y., Gupta, K. Das, Buonacorsi, B., Tam, M. C., Kim, H. S., Farrer, I., Croxall, A. F., Beere, H. E., Hamilton, A. R., Pepper, M., Austing, D. G., Studenikin, S. A., Sachrajda, A., Reimer, M. E., Wasilewski, Z. R., Ritchie, D. A., Baugh, J.
Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs loc
Externí odkaz:
http://arxiv.org/abs/2012.14370
Akademický článek
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Publikováno v:
In Journal of Crystal Growth 1 May 2019 513:15-19
Publikováno v:
Journal of Applied Physics 112 124305 (2012)
InAs nanowires with Al$_x$In$_{1-x}$P or Al$x$In$_{1-x}$As shells were grown on GaAs substrates by the Au-assisted vapour-liquid-solid (VLS) method in a gas source molecular beam epitaxy (GS-MBE) system. Core diameters and shell thicknesses were meas
Externí odkaz:
http://arxiv.org/abs/1209.4321
Publikováno v:
Journal of Crystal Growth, 354 (2012) p11-15
InAs nanowires were grown on GaAs substrates by the Au-assisted vapour-liquid-solid (VLS) method in a gas source molecular beam epitaxy (GS-MBE) system. Passivation of the InAs nanowires using InP shells proved difficult due to the tendency for the f
Externí odkaz:
http://arxiv.org/abs/1111.7259