Výsledky vyhledávání - "BARGET, MICHAEL REINER"

OPTIMIZATION STEPS OF GERMANIUM AS LIGHT EMITTER: STRAIN AND N-TYPE DOPING

Autor: BARGET, MICHAEL REINER

L'integrazione monolitica di funzionalità fotoniche nella micro-tecnologia basata su silicio è un obiettivo ampiamente perseguito dalla comunità scientifica, con applicazioni nella comunicazione di dati e nella rilevazione nel vicino e medio infra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1299::dcef867e0d0db89b54bfa97747c05abd
http://hdl.handle.net/10281/153240

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SiGe nanostructures inducing tensile strain in suspended germanium membranes

Autor: BARGET, MICHAEL REINER, BONERA, EMILIANO, Lodari, M, Mondiali, V, Chrastina, D, Bollani, M

Integration of photonics and electronics still lacks a light source that is monolithically integrable into existing CMOS technology. Germanium is investigated as a promising candidate for the active gain medium for a laser source, since it is CMOS co

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1299::621673727f5c58ddba1605c005b9c178
http://hdl.handle.net/10281/132571

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Akademický článek

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Optical Orientation of Spins in Bulk Ge studied by Direct-Gap Photoluminescence

Autor: DE CESARI, SEBASTIANO, GIORGIONI, ANNA, BARGET, MICHAEL REINER, BONERA, EMILIANO, GRILLI, EMANUELE ENRICO, GUZZI, MARIO, PEZZOLI, FABIO

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1299::cda17f2bd7da57b42866af9a86d33a52
http://hdl.handle.net/10281/87916

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Local Uniaxial Tensile Deformation of Germanium up to the 4% Threshold by Epitaxial Nanostructures

Autor: Gagliano, L, Rossetto, L, Mondiali, V, Lodari, M, Bollani, M, Chrastina, D, SCOPECE, DANIELE, BARGET, MICHAEL REINER, DE CESARI, SEBASTIANO, PEZZOLI, FABIO, MONTALENTI, FRANCESCO CIMBRO MATTIA, BONERA, EMILIANO

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1299::bf9ad0fcc909ba8adf9a4544b733a83b
http://hdl.handle.net/10281/132577

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Photoluminescence of phosphorous doped Ge on Si (100)

Autor: Michele Virgilio, Giovanni Capellini, Anne Hesse, Michael Reiner Barget, Noriyuki Taoka, Peter Zaumseil, Yuji Yamamoto, Thomas Schroeder, Bernd Tillack

Photoluminescence (PL) of selectively grown phosphorus (P) doped germanium (Ge) is investigated. 350â600 nm thick P-doped Ge is grown on 100 nm thick P-doped Ge buffer layer, which is annealed at 800 Â°C before the main part of Ge deposition.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::74c394a60a8cbce32cd2c7943323f1d9
https://hdl.handle.net/11590/323891

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