High-rate deposition of microcrystalline silicon with an expanding thermal plasma

Autor: A.M.H.N. Petit, D. L. Williamson, C Chiel Smit, A Arjen Klaver, BA Bas Korevaar, van Racmm René Swaaij, van de Mcm Richard Sanden

Publikováno v: Thin Solid Films, 491(1-2), 280-293. Elsevier

Hydrogenated microcrystalline silicon has been deposited at elevated deposition rates using an expanding thermal plasma for the decomposition of the precursor gas silane (SiH 4 ). An extensive survey of the influence of the deposition parameters on t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d89ca9393a3cc60afca97af05693f930
https://doi.org/10.1016/j.tsf.2005.06.032

High hole drift mobility in a-Si:H deposited at high growth rates for solar cell application

Autor: DC Daan Schram, van de Mcm Richard Sanden, Guy Adriaenssens, BA Bas Korevaar, Ahm Arno Smets, H.-Z. Song, Wmm Erwin Kessels

Publikováno v: Journal of Non-Crystalline Solids, 266-269(1), 380-384. Elsevier

Time-of-flight measurements on hydrogenated amorphous silicon deposited with a remote expanding thermal plasma at growth rates up to 12 nm/s have revealed a 7 to 10 times larger hole mobility than for films deposited with conventional rf-PECVD. The e

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::873e56673f3c7a80047ce06bc9ff230f
https://doi.org/10.1016/s0022-3093(99)00735-8

Temperature dependence at various intrinsic a-Si:H growth rates of p-i-n deposited solar cells

Autor: DC Daan Schram, R.A.C.M.M. van Swaaij, BA Bas Korevaar, M.C.M. van de Sanden, A. H. M. Smets, C Chiel Smit

Publikováno v: Conference Record of the 28th IEEE Photovoltaic Specialists Conference-2000, 916-919
STARTPAGE=916;ENDPAGE=919;TITLE=Conference Record of the 28th IEEE Photovoltaic Specialists Conference-2000

With a cascaded arc expanding thermal plasma, intrinsic solar grade amorphous silicon can be deposited at growth rates varying from 2 to 100 /spl Aring//s. The temperature above which good material is obtained becomes higher for higher growth rates.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ef91d63f49e21a9bf6e4d4330832e93d
https://doi.org/10.1109/pvsc.2000.916033

High-rate microcrystalline silicon for solar cells

Autor: M.C.M. van de Sanden, A.M.H.N. Petit, C Chiel Smit, Wilhelmus Mathijs Marie Kessels, BA Bas Korevaar, R.A.C.M.M. van Swaaij

Publikováno v: Conference Record of the 29th IEEE Photovoltaic Specialists Conference, New Orleans, May 19-24, 2002, 1170-1173
STARTPAGE=1170;ENDPAGE=1173;TITLE=Conference Record of the 29th IEEE Photovoltaic Specialists Conference, New Orleans, May 19-24, 2002
Scopus-Elsevier

In order to produce thin silicon films for solar cells at high growth rates we deposited films with a cascaded arc expanding thermal plasma. We demonstrate the power of this technique by applying amorphous films deposited at rates up to 1.4 nm/s in s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::220ec45653bc044f2eb25186fc3823b4
https://research.tue.nl/nl/publications/6cab0eb5-849f-490d-8c97-b9cfdd673bf4

Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar-H2-SiH4 plasma

Autor: G.J. Adriaenssens, RJ René Severens, Ahm Arno Smets, Wmm Erwin Kessels, van de Mcm Richard Sanden, DC Daan Schram, BA Bas Korevaar

Publikováno v: Journal of Applied Physics, 89(4), 2404-2413. American Institute of Physics

The properties of hydrogenated amorphous silicon (a-Si:H) deposited at very high growth rates (6–80 nm/s) by means of a remote Ar–H2–SiH4 plasma have been investigated as a function of the H2 flow in the Ar–H2 operated plasma source. Both the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c299e404e72f91f20e7af9f5e0568a00
https://research.tue.nl/nl/publications/b3a6a6e6-066a-4a13-b09f-c823718eeadc