Zobrazeno 1 - 10
of 71
pro vyhledávání: '"B.Z. Olshanetsky"'
Publikováno v:
Surface Science. 617:68-72
Submonolayer Ge cluster grown by molecular beam epitaxy on the Si(111)- 3 × 3 -Bi surface were studied using scanning tunneling microscopy. The cluster of monolayer and bilayer height containing 3–4 and 9–10 atoms, respectively, have been grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::874b50b75fc2b87fc1c62084f178b26d
https://doi.org/10.1016/j.susc.2013.07.020
https://doi.org/10.1016/j.susc.2013.07.020
Publikováno v:
JETP Letters. 95:259-265
It is known that the use of Bi surfactant (unlike Sb) upon the growth of Ge layers on Si(111) increases the contrast between Ge and Si atoms in a scanning tunneling microscope. This makes it possible to distinguish the Ge and Si surfaces. This effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e2d9fe48b36ac4567926169204f1bb9
https://doi.org/10.1134/s0021364012050128
https://doi.org/10.1134/s0021364012050128
Publikováno v:
JETP Letters. 93:661-666
The possibility of the formation of a dense array of size-uniform Ge clusters on the Si(111) surface in the presence of the Bi surfactant has been demonstrated using scanning tunneling microscopy. It has been shown that the deposition of germanium at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11130ee4fc1215acc8faa9a3bda0dd89
https://doi.org/10.1134/s0021364011110105
https://doi.org/10.1134/s0021364011110105
Publikováno v:
Physics of the Solid State. 51:202-207
The initial stages of germanium growth on the Si(7 7 10) surface containing regular atomic steps with a height of three interplanar spacings were investigated using scanning tunneling microscopy. This surface was previously referred to in the literat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f4659693a36db028792f039f7962460
https://doi.org/10.1134/s1063783409010259
https://doi.org/10.1134/s1063783409010259
Autor:
B.Z. Olshanetsky, A. I. Yakimov, S. A. Teys, A. I. Nikiforov, O. P. Pchelyakov, S.I. Chikichev
Publikováno v:
Journal of Physics and Chemistry of Solids. 69:669-672
Nanostructure based on IV–IV semiconductor has attracted great attention and large interest in academic community in recent year due to its quantum effect. Among these structures, quantum dots and wires have been considered for its potential applic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf30f331d40d762962b9b00664a1f98f
https://doi.org/10.1016/j.jpcs.2007.07.056
https://doi.org/10.1016/j.jpcs.2007.07.056
Publikováno v:
Surface Science. 600:4878-4882
The vicinal Si(1 1 1) surface, inclined towards the [ 1 ¯ 1 ¯ 2 ] direction, was investigated by scanning tunnelling microscopy and spot profile analysing low energy electron diffraction. It has been established that the surface, consisting of regu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4db257151fc4f4dd546f6bc808664bc
https://doi.org/10.1016/j.susc.2006.08.009
https://doi.org/10.1016/j.susc.2006.08.009
Publikováno v:
Physics of the Solid State. 48:1820-1826
The initial stages of Ge growth on Si(111) vicinal surfaces tilted in the [ $$\overline 1 \overline 1 2$$ ] and [ $$11\overline 2 $$ ] directions were studied in situ in the temperature range 350–500°C using scanning tunneling microscopy. It was s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96693f7a89c0842218df68d492927911
https://doi.org/10.1134/s1063783406090344
https://doi.org/10.1134/s1063783406090344
Autor:
Martin Kammler, M. Horn-von-Hoegen, R. A. Zhachuk, F.-J. Meyer zu Heringdorf, C. Seifert, B.Z. Olshanetsky, R. Hild
Publikováno v:
Surface Science. 512:117-127
Au induced faceting of vicinal Si(1 1 1) has been studied during adsorption at elevated temperature by spot profile analyzing of low energy electron diffraction and after quenching to room temperature by scanning tunneling microscopy. On the surfaces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef57b2b9836970c054f9c28896ecccc6
https://doi.org/10.1016/s0039-6028(02)01666-7
https://doi.org/10.1016/s0039-6028(02)01666-7
Publikováno v:
Surface Science. 488:233-238
Au adsorption induces a vast variety of different reconstructions on Si(1 1 1). In a combined scanning tunneling microscopy and spot-profile analysis-low energy electron diffraction study we have observed for the first time an Au induced (2×2)-Au an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::902c16c24de642de8bd00ed10d3c91d6
https://doi.org/10.1016/s0039-6028(01)01139-6
https://doi.org/10.1016/s0039-6028(01)01139-6
Autor:
B.Z. Olshanetsky
Publikováno v:
Applied Surface Science. :130-136
The effect of Ni and Co adsorption on Si surfaces with different orientations has been studied by LEED and AES. It has been established that the transport of Ni and Co atoms at Si surfaces is actually by their diffusion in the bulk of Si. There are t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ef901345625bc7d90d5daee8dd6380f
https://doi.org/10.1016/s0169-4332(96)00133-x
https://doi.org/10.1016/s0169-4332(96)00133-x