Zobrazeno 1 - 10
of 98
pro vyhledávání: '"B.Y. Man"'
Autor:
Xuejian Du, B.Y. Man
Publikováno v:
Journal of Crystal Growth. 499:18-23
High quality monocrystalline indium oxide (In2O3) films have been epitaxially grown on SiO2 (0001) substrates by the metal-organic chemical vapor deposition (MOCVD) method. The influences of different growth temperatures on the structural, morphologi
Autor:
Hengwei Qiu, D.J. Feng, Z.C. Sun, M. Liu, C.S. Chen, B.Y. Man, Yancai Xu, Chao Zhang, S.Z. Jiang, Hongsheng Li, Jiaxin Zhang, Cheng Yang
Publikováno v:
Applied Surface Science. 357:1708-1713
Molybdenum disulfide has recently raised more and more interest due to its layer-related properties and potential applications in optoelectronics and electronics. Here, layer-controlled large-area and continuous MoS2 atomic layers were obtained on mi
Autor:
Chao Zhang, B.Y. Man, G.D. Hu, Cheng Yang, S.Z. Jiang, D.J. Feng, Jie Liu, M. Liu, C.S. Chen, H.L. Dong, Shicai Xu
Publikováno v:
Optics & Laser Technology. 64:288-291
The large-area monolayer graphene film was grown on Cu foil by chemical vapor deposition (CVD) technique. After transferring it to a quartz substrate, the graphene film was used as a saturable absorber (SA) in an Nd:YVO4 laser. Mode-locked laser puls
Autor:
S.Z. Jiang, D. Bi, Chao Zhang, M. Liu, C.S. Chen, Shicai Xu, Hengwei Qiu, Cheng Yang, D.J. Feng, B.Y. Man, Fuyan Liu
Publikováno v:
Applied Surface Science. 307:327-332
Direct deposition of graphene film on the standard single mode fiber is offered using a Cu-vapor-assisted chemical vapor deposition system. The gas flow of H 2 and Ar before the growth process plays a crucial role for the direct deposition of the gra
Autor:
C.S. Chen, Shicai Xu, D. Bi, M. Liu, Chao Zhang, Cheng Yang, Fuyan Liu, B.Y. Man, S.Z. Jiang, X. Meng, Qingjie Huang
Publikováno v:
Optics & Laser Technology. 56:393-397
High-quality monolayer graphene films with large area were grown on Cu foils by the chemical vapor deposition (CVD) technique. For the first time, graphene saturable absorbers (SAs) with well-defined layer numbers were fabricated by controlling of tr
Autor:
D. Bi, Chao Zhang, S.Z. Jiang, Jiaxin Zhang, Hengwei Qiu, D.J. Feng, Fuyan Liu, C.S. Chen, B.Y. Man, Cheng Yang, M. Liu
Publikováno v:
CrystEngComm. 16:8941-8945
Direct deposition of a uniform and high-quality Bi2Se3 thin film on a graphene film (layer controlled) is performed using a catalyst-free vapor deposition system in a Se-rich environment. The Se-rich environment is utilized to fill the Se vacancies a
Publikováno v:
Applied Surface Science. 264:522-526
HgCdTe thin films have been deposited on CdZnTe/Si(1 1 1) substrates by pulsed laser deposition (PLD). A Nd:YAG pulsed laser with a wavelength of 1064 nm was used as laser source. The effects of CdZnTe buffer layer thickness which varied with the dep
Publikováno v:
Applied Surface Science. 263:362-366
The carbon thin films were grown on different substrates with different buffer layers by laser molecular beam epitaxy (LMBE) with a high purity graphite carbon target. A UV pulsed KrF excimer laser with a wavelength of 248 nm was used as laser source
Publikováno v:
Surface Engineering. 28:540-543
Amorphous gallium nitride doped with Mn thin films was deposited on sapphire (0001) substrates by laser molecular beam epitaxy. After simple processing of annealing at different temperatures for 30 min in ammonia atmosphere, good quality Ga1−xMnxN
Autor:
Xingguo Gao, S.Z. Jiang, Bin Hu, B.Y. Man, Shicai Xu, C.C. Wang, Cheng Yang, M. Liu, Z.C. Sun, Yuying Ma, C.S. Chen
Publikováno v:
Materials Chemistry and Physics. 135:991-997
High quality β-FeSi 2 thin films have been fabricated on silicon (100) substrate by the pulsed laser deposition (PLD) technique with the Fe and sintered FeSi 2 targets. The crystalline quality and surface morphology of the samples were characterized