Zobrazeno 1 - 10
of 218
pro vyhledávání: '"B.S. Suh"'
Autor:
Won-Sok Lee, Duhyun Lee, Sang Ho Jeon, Son Juho, D. Minn, Dae-Woong Kang, Sung-Gi Yang, Y. Aoki, J. Jang, Ki-chul Kim, Hyun-Chul Park, Jung-hyeon Kim, Soon-yeon Park, S. Kim, J. H. Lee, J.M. Park, B.S. Suh, M. Kim, Chung-woo Kim, Jung-Hyoung Lee, Kyung-Hoon Min, A.-S. Ryu, Young-Wug Kim, S.Y. Lee
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
This paper presents design challenges and solutions for the fifth generation (5G) phased-array transceiver ICs in millimeter-wave (MMW) frequency bands. A 28nm bulk CMOS device technology is selected to integrate multiple RF phased-array elements in
Akademický článek
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Autor:
Bearden, Aaron A.1 (AUTHOR) aaron.bearden@health.southalabama.edu, Stewart, Emily M.1 (AUTHOR), Casher, Candace C.1 (AUTHOR), Shaddix, Meredith A.1 (AUTHOR), Nobles, Amber C.1 (AUTHOR), Mockett, Robin J.1 (AUTHOR) mockett@southalabama.edu
Publikováno v:
International Journal of Molecular Sciences. Nov2024, Vol. 25 Issue 21, p11504. 20p.
Autor:
Tanaka, Hitomi1,2 (AUTHOR) hitanaka@u-gifu-ms.ac.jp, Nishimaki-Mogami, Tomoko3 (AUTHOR) mogami@nihs.go.jp, Tamehiro, Norimasa3 (AUTHOR) tamehiro@nihs.go.jp, Shibata, Norihito3 (AUTHOR) n-shibata@nihs.go.jp, Mandai, Hiroki4 (AUTHOR) hmandai@u-gifu-ms.ac.jp, Ito, Shosuke2 (AUTHOR) sito@fujita-hu.ac.jp, Wakamatsu, Kazumasa2 (AUTHOR) sito@fujita-hu.ac.jp
Publikováno v:
International Journal of Molecular Sciences. Sep2024, Vol. 25 Issue 18, p9990. 20p.
Autor:
Pelles-Taskó, Beáta1 (AUTHOR) pelles-tasko.beata@med.unideb.hu, Szekeres, Réka1 (AUTHOR) szekeres.reka@med.unideb.hu, Takács, Barbara1 (AUTHOR) takacs.barbara@pharm.unideb.hu, Szilágyi, Anna1 (AUTHOR) dr.szilagyi.anna@med.unideb.hu, Ujvárosy, Dóra2 (AUTHOR) ujvarosy.dora@med.unideb.hu, Bombicz, Mariann1 (AUTHOR) bombicz.mariann@pharm.unideb.hu, Priksz, Dániel1 (AUTHOR) priksz.daniel@pharm.unideb.hu, Varga, Balázs1 (AUTHOR) varga.balazs@pharm.unideb.hu, Gesztelyi, Rudolf1 (AUTHOR) gesztelyi.rudolf@pharm.unideb.hu, Szabó, Zoltán2 (AUTHOR) szabo.zoltan@med.unideb.hu, Szilvássy, Zoltán1 (AUTHOR) szilvassy.zoltan@med.unideb.hu, Juhász, Béla1,2 (AUTHOR) juhasz.bela@med.unideb.hu
Publikováno v:
Life (2075-1729). Sep2024, Vol. 14 Issue 9, p1148. 13p.
Autor:
Duenas Santos, Carlos Lester1 (AUTHOR) ahmad.mezher@unb.ca, Mezher, Ahmad Mohamad1 (AUTHOR) jcardena@unb.ca, Astudillo León, Juan Pablo2,3 (AUTHOR) jastudillo@yachaytech.edu.ec, Cardenas Barrera, Julian1 (AUTHOR) eduardo.castillo@unb.ca, Castillo Guerra, Eduardo1 (AUTHOR) jmeng@unb.ca, Meng, Julian1 (AUTHOR)
Publikováno v:
Sensors (14248220). Aug2024, Vol. 24 Issue 15, p4818. 29p.
Autor:
Unnikrishnan Meenakshi, Dhanalekshmi1 (AUTHOR) dhanalekshmi@nu.edu.om, Narde, Gurpreet Kaur1 (AUTHOR) kbalushi@nu.edu.om, Ahuja, Alka1 (AUTHOR) dhanalekshmi@nu.edu.om, Al Balushi, Khalid1 (AUTHOR), Francis, Arul Prakash2 (AUTHOR) fdapharma@gmail.com, Khan, Shah Alam1 (AUTHOR)
Publikováno v:
Pharmaceutics. Jun2024, Vol. 16 Issue 6, p761. 21p.
Akademický článek
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Autor:
A.T. Kim, Hong-jae Shin, M.Y. Kim, H. K. Kang, S.W. Nam, Y.J. Moon, Suk-Joo Lee, Tae-Kyung Kim, S.M. Choi, Young-Jin Wee, I.R. Kim, J.W. Hwang, B.S. Suh, J.E. Ku, Jae-Duk Lee, Won Ho Choi, G.P. Suh, K. W. Lee, Jung-hyeon Kim, Hyeon-deok Lee, I.H. Oh, A.M. Lee, Nae-In Lee, K.-K. Park, Soon-yeon Park, J.Y. Maeng
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
We present the effect of mechanical strength and residual stress of dielectric barrier on electromigration performance in Cu/low-k interconnects. It has been discovered that mechanical strength and residual stress of dielectric capping layer have a g
Autor:
H.-K. Kang, D.H. Lee, Jin-Yang Kim, Young-Jin Wee, S.Y. Kim, Chang-Sub Lee, T.K. Kim, W.S. Song, Seung-Man Choi, Sun-Young Kim, D.K. Jeong, B.S. Suh, Kang-Deog Suh, Kyu-Charn Park, Tae-hun Kim
Publikováno v:
2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).
The pseudo-breakdown (PBD) phenomenon has been investigated in intra-level reliability assessment of Cu-interconnects. Field and intralevel spacing dependence show that PBDs form an irreversible permanent damage path that differs from that of HBDs by