Zobrazeno 1 - 10
of 50
pro vyhledávání: '"B.S. Shchamkhalova"'
Autor:
Vasiliy O. Yapaskurt, B.S. Shchamkhalova, G. G. Yakushcheva, V.E. Sizov, V.A. Jitov, P. I. Kuznetsov, A. G. Temiryazev
Publikováno v:
Journal of Crystal Growth. 483:216-222
We present a first study of films of the quaternary Bi2−xSbxTe3−ySey solid solutions on (0 0 0 1) sapphire substrates grown by atmospheric pressure MOVPE. Trimethylbismuth, trimethylantimony, diisopropylselenide and diethyltelluride were used as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bd400f2f6e8d982c1ba2d444b8f6108
https://doi.org/10.1016/j.jcrysgro.2017.12.009
https://doi.org/10.1016/j.jcrysgro.2017.12.009
Autor:
V.E. Sizov, B.S. Shchamkhalova, V. D. Shcherbakov, G. G. Yakushcheva, V.A. Jitov, P. I. Kuznetsov, Vasiliy O. Yapaskurt, V. A. Luzanov
Publikováno v:
Journal of Crystal Growth. 471:1-7
The films of Sb-Te system have been deposited by MOVPE on (0 0 0 1) Al2O3 substrates with thin ZnTe buffer layers at different temperatures and Te/Sb ratios in the vapor phase. X-ray diffractometry, SEM microscopy, Raman and EDX spectroscopy were use
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06718bff2fce3791d481f388dfbccb1c
https://doi.org/10.1016/j.jcrysgro.2017.05.002
https://doi.org/10.1016/j.jcrysgro.2017.05.002
Autor:
B.S. Shchamkhalova
Publikováno v:
Physica B: Condensed Matter. 509:36-40
We show that the charged tip of the probe microscope, which is widely used in studying the electron transport in low-dimensional systems, induces a spin current. The effect is caused by the spin–orbit interaction arising due to an electric field pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f5d1a0ae3c1b8f2f9320bb3ee09411d
https://doi.org/10.1016/j.physb.2016.12.028
https://doi.org/10.1016/j.physb.2016.12.028
Autor:
Vasiliy O. Yapaskurt, P. I. Kuznetsov, V.A. Jitov, V. A. Luzanov, V. D. Shcherbakov, G. G. Yakushcheva, B.S. Shchamkhalova
Publikováno v:
Journal of Crystal Growth. 455:122-128
We have deposited films of Bi-Te system by atmospheric pressure MOVPE on (0001) Al 2 O 3 substrates with thin ZnTe or thick GaN buffer layers at different temperatures and Te/Bi ratio in the vapor phase. As-grown films were studied by X-ray diffracto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::480719aacd44c8f0499522e642c949f6
https://doi.org/10.1016/j.jcrysgro.2016.09.055
https://doi.org/10.1016/j.jcrysgro.2016.09.055
Bound electron pairs (BEPs) with energy in the band gap are interesting because they can participate in charge and spin transport in modern topologically nontrivial materials. We address the problem of their stability and study the radiative decay of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dff5f228efe7626245fb1010b0225231
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
G. G. Yakusheva, A. G. Temiryazev, P. I. Kuznetsov, B.S. Shchamkhalova, V. A. Zhitov, V. A. Luzanov, L. Yu. Zakharov
Publikováno v:
Journal of Communications Technology and Electronics. 61:183-189
Thin solid layers that are formed upon heating of the gaseous trimethylbismuth–isopropylselenide–hydrogen system on the (0001) Al2O3 and singular and vicinal (100) GaAs surfaces are studied. The conditions for deposition of metal Bi and phases of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91c68484d7724d2870e0d410e091fe15
https://doi.org/10.1134/s1064226916010083
https://doi.org/10.1134/s1064226916010083
Autor:
P. I. Kuznetsov, G. G. Yakushcheva, B.S. Shchamkhalova, V.A. Jitov, A. G. Temiryazev, V. A. Luzanov
Publikováno v:
Journal of Crystal Growth. 433:114-121
We studied the metalorganic vapor phase epitaxy (MOVPE) of ( Bi 1 − x Sb x ) 2 Se 3 solid solution films with a different Sb content on (001) Al 2 O 3 substrates with thin ZnSe buffer layer in the range of temperatures 250–480 °C. As-grown films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96e1cb1b37ccaeb65767db072f077e60
https://doi.org/10.1016/j.jcrysgro.2015.10.006
https://doi.org/10.1016/j.jcrysgro.2015.10.006
Publikováno v:
physica status solidi (b). 257:2000299
Bound electron pairs (BEPs) arising due to peculiarities of the band structure of topologically nontrivial materials are of interest as charge and spin carriers with energies in the band gap. Moreover, being composite bosons, BEPs can also possess co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c7d3c6816acac7b6e68246be99d08ec9
https://doi.org/10.1002/pssb.202000299
https://doi.org/10.1002/pssb.202000299
Autor:
V.E. Sizov, B.S. Shchamkhalova, G. G. Yakushcheva, A. G. Temiryazev, V.A. Jitov, P. I. Kuznetsov, V. A. Luzanov
Publikováno v:
Journal of Crystal Growth. 409:56-61
We report on a metal organic vapor epitaxy (MOVPE) of Bi 2 Te 3− x Se x films over the entire range of compositions ( 0 ≤ x ≤ 3 ) for the first time. The films were grown on Al 2 O 3 (0001) substrates at 465 °C using trimethylbismuth (Bi 2 Me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e50d47ce6745b156cbdd62d9b4807f0f
https://doi.org/10.1016/j.jcrysgro.2014.09.035
https://doi.org/10.1016/j.jcrysgro.2014.09.035