Zobrazeno 1 - 10 of 171 pro vyhledávání: '"B.S. Meyerson"'
1
Effect of illumination on transport properties of the high mobility 2D hole gas in Si–SiGe heterostructures
Autor: Frank F. Fang, R. G. Clark, V.A. Stadnik, B.S. Meyerson, Emma E. Mitchell, P.J. Wang
Publikováno v: Physica B: Condensed Matter. :386-390
The effect of illumination on transport properties of the two-dimensional hole gas (2DHG) in Si–SiGe heterostructures is found to irreversibly alter its 2D transport properties, analogous to the persistent photoconductivity effect in GaAs-based dev
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7ae3b59133643ff7577e8872b105ceb5
https://doi.org/10.1016/s0921-4526(97)00941-1
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2
Hall measurements of the insulating phases at υ=1.5 and υ∼0.5 in p-type Si/Si1−xGex heterostructures using pulsed magnetic fields
Autor: R. P. Starrett, B.S. Meyerson, Emma E. Mitchell, R. G. Clark, A.V. Skougarevsky, P.J. Wang, Frank F. Fang
Publikováno v: Physica B: Condensed Matter. :391-394
Low temperature (0.3 K) Hall resistivities (ρxy) of the two dimensional hole system in high quality p-type Si/Si1−xGex single heterojunctions have been measured in pulsed magnetic fields to 50 T. Clean Hall measurements are obtained by subtracting
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::35477da80e2f1171a747c594f9d881f9
https://doi.org/10.1016/s0921-4526(97)00946-0
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3
A low-temperature insulating phase at for 2D holes in high-mobility heterostructures with Landau level degeneracy
Autor: Frank F. Fang, Ross H. McKenzie, P.J. Wang, R.B. Dunford, R. Newbury, Emma E. Mitchell, R. G. Clark, R. P. Starrett, V.A. Stadnik, B.S. Meyerson
Publikováno v: Journal of Physics: Condensed Matter. 9:1565-1574
Magneto-transport measurements of the 2D hole system (2DHS) in p-type Si-Si1-xGex heterostructures identify the integer quantum Hall effect (IQHE) at dominantly odd-integer filling factors v and two low-temperature insulating phases (IPs) at v = 1.5
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::774939f8d9f1cac786a6825df697847d
https://doi.org/10.1088/0953-8984/9/7/018
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4
Low temperature magnetotransport of 2D electron and hole systems in high-mobility SiSi1 − xGex heterostructures
Autor: Ross H. McKenzie, Frank F. Fang, B.S. Meyerson, J. O. Chu, R. Newbury, R. G. Clark, V.A. Stadnik, R.B. Dunford, K.E. Ismail, R. P. Starrett, P.J. Wang, Emma E. Mitchell
Publikováno v: Surface Science. :550-555
Low-temperature magnetotransport measurements of 2D electron and hole systems (2DES, 2DHS) in high quality n- and p-type modulation-doped SiSi1 − xGex heterostructures (respectively) have been extended to high magnetic fields (50 T) and low tempera
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::64656671e84f2d26742643e0fb5fca83
https://doi.org/10.1016/0039-6028(96)00467-0
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5
Low-temperature transport and photoconductivity response of high mobility Si-SiGe heterostructures in strong magnetic fields
Autor: A.V. Skougarevsky, Frank F. Fang, V.A. Stadnik, B.S. Meyerson, J. O. Chu, R.B. Dunford, R. Newbury, R. G. Clark, Emma E. Mitchell, R. P. Starrett, K.E. Ismail, Ross H. McKenzie
Publikováno v: Physica B: Condensed Matter. 216:388-392
Low-temperature (mK) magneto-transport and photoconductivity measurements of 2D electron and hole systems (2DES, 2DHS) in high quality n- and p-type modulation-doped Si-SiGe heterostructures (respectively) have been extended to high magnetic fields.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6f1a129ee7a9a44c7abb6041edbdaf9d
https://doi.org/10.1016/0921-4526(95)00524-2
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6
FQHE states of high mobility n-Si/Si1−xGex heterostructures in pulsed magnetic fields
Autor: R. G. Clark, R.B. Dunford, K.E. Ismail, B.S. Meyerson, J. O. Chu, Frank F. Fang, R. P. Starrett, R. Newbury
Publikováno v: Solid State Communications. 96:57-60
Low temperature (mK) magneto-transport measurements of high quality n-type modulation-doped Si/Si0.7Ge0.3 heterostructures have been extended to high magnetic fields (50T) and low temperatures (40mK). For the high mobility electrons confined to 2D in
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d8b5dc9f721134dbba07ffbaee215ebe
https://doi.org/10.1016/0038-1098(95)00400-9
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7
UHVCVD growth of Si/SiGe heterostructures and their applications
Autor: B.S. Meyerson, J.M.C. Stork, F.K. LeGoues, D.L. Harame, Khalid EzzEldin Ismail
Publikováno v: Semiconductor Science and Technology. 9:2005-2010
The era of integrated circuits based on SiGe heterojunction bipolar transistors arrived with the announcement of a 12-bit digital to analogue converter (DAC) fabricated using an analogue optimization of IBM's SiGe HBT technology. Medium-scale integra
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::95e26c63e2ee2115dd27fe8f95a3f1eb
https://doi.org/10.1088/0268-1242/9/11s/025
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9
GaAs performance in Si technology: SiGe HBTs for mixed analog-digital applications
Autor: B.S. Meyerson, J.M.C. Storkl, D.L. Harame
Publikováno v: Proceedings of 1994 IEEE GaAs IC Symposium.
Summary form only given. Reviews the short but successful history of SiGe HBTs, from the first functionality demonstration in 1987 to the performance of a 1 GHz, 12-bit DAC in 1993. Availability of 60 GHz Fmax bipolar devices in a fully integrated 0.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::db028c52809f5f01afcf1d510d7d6ee8
https://doi.org/10.1109/gaas.1994.636908
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