Zobrazeno 1 - 10
of 19
pro vyhledávání: '"B.S. Felker"'
Publikováno v:
Corrosion Science. 37:1931-1946
This study was undertaken to determine the compatibility of hydrogen bromide (HBr) with common materials of construction used for specialty gas delivery systems. Reactions between reactive gases and materials of construction can result in the formati
Autor:
A. Mitwalsky, W. Kern, David Arthur Bohling, H. Treichel, K. R. Coyle, Andrew P. Lane, G. Tempel, B.S. Felker, N. P. Sandler, M.A. George, G. Zorn
Publikováno v:
Advanced Materials for Optics and Electronics. 5:163-175
Flims of metal oxides, such as Ta2O5, Nb2O5, Al2O3, HfO2, ZrO2 and TiO2 have been fabricated by use of different precursor materials, deposition techniques and annealing techniques. Several analytical methods were applied to study the layers. New dat
Publikováno v:
ChemInform. 27
Publikováno v:
IEEE Conference Record - Abstracts. 1999 IEEE International Conference on Plasma Science. 26th IEEE International Conference (Cat. No.99CH36297).
Summary form only given. NF/sub 3/ based discharges are commonly used for cleaning residual silicon dioxide and nitride from plasma enhanced chemical vapor deposition (PECVD) process chambers. In order to find a balance between fast chamber cleans an
Publikováno v:
International Conference on Plasma Sciences (ICOPS).
Summary form only given. Optical emission spectroscopy (OES) and a Langmuir probe were used to study the chemical and physical state of NF/sub 3/ RF plasma discharges with respect to diluent. The diluents examined include Ar, He, N/sub 2/, O/sub 2/,
Autor:
David Arthur Bohling, Andrew G. Gilicinski, John Giles Langan, Scott Edward Beck, J.C. Tvankovits, R.M. Rynders, B.S. Felker, M.A. George
Publikováno v:
MRS Proceedings. 318
This study explores the effects of two chemical vapor cleaning chemistries on silicon surfaces. The silicon surfaces are not significantly roughened by exposure to either process. Trace amounts of fluorine are found on the surfaces exposed to 1,1,1,5
Autor:
Yale Strausser, David Arthur Bohling, Andrew G. Gilicinski, James R. Stets, B.S. Felker, Rebecca M. Rynders, Scotjt E. Beck
Publikováno v:
MRS Proceedings. 324
Progress is reported in developing reliable methodology for imaging silicon surfaces with the atomic force microscope (AFM). A new form of AFM, known as tapping mode AFM, has been found to provide the best quality data for surface roughness determina
Publikováno v:
MRS Proceedings. 282
Chemical vapor cleaning (CVC) is an emerging technology which has been used to remove transition metal contamination from wafer surfaces. CVC is a gas phase/surface reaction which does not incorporate any wet steps nor condensation of reagents onto t
Autor:
Bing Ji, Robert T. McGrath, Hsin-Pai Hsueh, John Giles Langan, B.S. Felker, Eugene Joseph Karwacki
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 19:1346
To minimize ion bombardment induced damage in NF3-based chamber cleaning plasmas, we have studied the effects of diluent gases and reactor pressure on ion energy distribution functions in NF3 plasmas. We have utilized plasma ion mass spectrometry, io
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