Zobrazeno 1 - 10
of 57
pro vyhledávání: '"B.S. Avset"'
Autor:
Miguel Ullan, B.S. Avset, Manuel Lozano, Francesca Campabadal, Arie Ruzin, C. Martı́nez, Luis Fonseca, E. Nossarzewska-Orlowska, F. Lemeilleur
Publikováno v:
Scopus-Elsevier
Radiation produces lattice damage in silicon by displacing the atoms from their original positions and thereby generating the corresponding defects. As a result, new states are created in the semiconductorforbidden band gap, negatively affecting the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8cb4e2f488ca550a4eca56e6978611d5
https://doi.org/10.1016/s0026-2714(99)00292-9
https://doi.org/10.1016/s0026-2714(99)00292-9
Autor:
B.S. Avset
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 388:361-364
High resistivity n-type Si has been neutron irradiated and characterized by Deep Level Transient Spectroscopy (DLTS). In addition to common irradiation induced traps we have observed a hole trap with activation energy around 0.475 eV. For characteriz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21cf016c0dd05ec1ec8b8688298c0fdb
https://doi.org/10.1016/s0168-9002(96)01245-4
https://doi.org/10.1016/s0168-9002(96)01245-4
Autor:
B.S. Avset
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 385:137-144
Phosphorus-doped high-resistivity silicon from different vendors and production series has been used to fabricate diodes in the same process run. The diodes were investigated by capacitance-voltage, current-voltage and deep level transient spectrosco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d4e91e5ba43e5d47e5a6960c0bc0611
https://doi.org/10.1016/s0168-9002(96)00882-0
https://doi.org/10.1016/s0168-9002(96)00882-0
Autor:
B.S. Avset, L. Evensen
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 377:397-403
The performance and stability of silicon diode detectors can be improved by implementing guard ring structures around the active detector area. The purpose of this work is to study design parameters influencing the performance of multiguard structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::221d53e44c3541033c041a3e68ca4731
https://doi.org/10.1016/0168-9002(96)00194-5
https://doi.org/10.1016/0168-9002(96)00194-5
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 377:429-434
Silicon microstrip detectors can be biased with polysilicon resistors or Field Effect Transistor (FET) biasing structures. Polysilicon resistors are radiation hard, but using the FET biasing principle reduces processing costs and can give better nois
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b24f66e5af77681decb71ca19dba1b72
https://doi.org/10.1016/0168-9002(96)00216-1
https://doi.org/10.1016/0168-9002(96)00216-1
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 310:192-196
Measurements have been carried out on the temperature dependence of the behaviour of two types of drift device: photodiodes and position sensitive drift chambers with segmented anode and cathode structures. Leakage currents and electron mobility have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be00714f6aa76e2e001757b020397f10
https://doi.org/10.1016/0168-9002(91)91024-p
https://doi.org/10.1016/0168-9002(91)91024-p
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 310:203-207
Silicon drift chambers with subdivided anode structures intended for two-dimensional position measurement have been produced. These devices use implanted resistor chains to form the drift and have orthogonal strips on the reverse side intended for se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9827c7387b0cdb321ca0d8661ce1d4d3
https://doi.org/10.1016/0168-9002(91)91026-r
https://doi.org/10.1016/0168-9002(91)91026-r
Autor:
R. A. Brenner, Renato Turchetta, D. Husson, A. Lounis, J. Lindgren, L. Hubbeling, Tuure Tuuva, Iiro Hietanen, B.S. Avset, J. Chauveau, L. Evensen, M. Turala, P. Weilhammer, W. Dulinski, M. Schaeffer
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 310:197-202
Capacitively coupled Si strip detectors with readout on both the p-side and the n-side have been developed. A novel scheme to separate strips ohmically on the n-side by means of field depletion via a suitable potential applied to the readout strips h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb4b760f61b5670451ea75534e7fa935
https://doi.org/10.1016/0168-9002(91)91025-q
https://doi.org/10.1016/0168-9002(91)91025-q
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 288:131-136
Low capacitance photodiodes based on the principle of the solid state drift chamber have been constructred and tested. The devices are based on a cellular design with an anode at the centre of each of five cells allowing electrons liberated by ionisa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65f15fd85807af1f1fc3dca029223765
https://doi.org/10.1016/0168-9002(90)90477-n
https://doi.org/10.1016/0168-9002(90)90477-n
