Zobrazeno 1 - 10
of 117
pro vyhledávání: '"B.R. Chakraborty"'
Autor:
Arun Kumar Pal, G. Sehgal, S. Hussain, B.R. Chakraborty, S. Das, Ritamay Bhunia, Radhaballav Bhar
Publikováno v:
Advances in Polymer Technology. 37:60-70
Publikováno v:
Thin Solid Films. 591:60-65
Measured sputter depth profiles of Ta/Si multilayers consisting of 10 alternating layers of Si (10.5 nm thickness) and Ta (7.5 nm thickness) obtained by sputtering with Cs + ions of 1 keV energy, impinging under an angle of 45°, were re-evaluated by
Autor:
Radhaballav Bhar, S. Das, Ritamay Bhunia, Sajjad Hussain, Arun Kumar Pal, B.R. Chakraborty, N. Bhadra
Publikováno v:
Plasmonics. 10:1291-1300
Silver nanoparticles were incorporated in between zinc oxide layers to realize ZnO/n-Ag/ZnO sandwich structure. Particle size and volume fraction of nanocrystalline silver particles were optimized to obtain a layer exhibiting a strong plasmonic peak
Autor:
G. Amarendra, B.R. Chakraborty, G. Sehgal, Radhaballav Bhar, Dibyendu Ghosh, Sajjad Hussain, Manas Kumar Dalai, Arun Kumar Pal, B. Ghosh
Publikováno v:
Materials Science in Semiconductor Processing. 24:74-82
Residual CdCl 2 in chemical bath deposited (CBD) CdS layer was utilized to observe grain growth in CdTe layer for glass/SnO 2 /CBD-CdS/CdTe structures. The above as-deposited composite films were subjected to rapid thermal annealing (RTA) for observi
Autor:
Debamalya Ghosh, G. Sehgal, Radhaballav Bhar, B.R. Chakraborty, Arun Kumar Pal, B. Ghosh, Sajjad Hussain
Publikováno v:
Plasmonics. 9:1271-1281
The effect of nano-Ag (n-Ag) plasmonic layer in InP/CdS solar cell structure was examined. An enhancement of short circuit current improving the overall cell efficiency was observed in InP/n-Ag/CdS cells. Location of the plasmonic layer in the above
Autor:
B.R. Chakraborty, G. Sehgal, Radhaballav Bhar, Dibyendu Ghosh, Arun Kumar Pal, B. Ghosh, Sajjad Hussain
Publikováno v:
physica status solidi (a). 211:890-900
Introduction of plasmonic layer in p-Si/undoped CdS/indium doped CdS (p-Si/CdS/In:CdS) solar cell indicated an enhancement of short circuit current which improved the overall increase in efficiency. The location of n-Ag layer and the possible interdi
Publikováno v:
Materials Science in Semiconductor Processing. 16:2013-2020
We report the preparation of thin film boron doped silicon dioxide (also called borosilicate–glass or BSG) by RF magnetron and its use as a boron diffusion source, especially for shallow junctions. For this purpose, a sputtering target of BSG was p
Autor:
G. Sehgal, Sajjad Hussain, Radhaballav Bhar, Dibyendu Ghosh, B.R. Chakraborty, Arun Kumar Pal, B. Ghosh, Manas Kumar Dalai
Publikováno v:
Materials Research Bulletin. 48:4711-4717
CdTe films were deposited by thermal evaporation onto chemical bath deposited CdS (CBD-CdS) films. The composite films were subjected to rapid thermal annealing (RTA) to observe simultaneous grain growth in both the CdS and CdTe layers. The films wer
Publikováno v:
Surface and Interface Analysis. 46:36-41
Depth profiling of an organic reference sample consisting of Irganox 3114 layers of 3 nm thickness at depths of 51.5, 104.5, 207.6 and 310.7 nm inside a 412 nm thick Irganox 1010 matrix evaporated on a Si substrate has been studied using the conventi
Autor:
B.R. Chakraborty, Vijaykumar Toutam, Manas Kumar Dalai, S. Singh, S.K. Halder, A.K. Srivastava, G. Sehgal, K.K. Maurya
Publikováno v:
Thin Solid Films. 520:6409-6414
A multilayer thin film structure of ten alternate Ta and Si layers with approximately 18 nm thickness for the combined (Ta + Si) layer, was evaluated to explore the individual layer thickness and the interface mixing behavior using different surface