Zobrazeno 1 - 10
of 72
pro vyhledávání: '"B.M. Paine"'
Autor:
B.M. Paine
Publikováno v:
Microelectronics Reliability. 55:2499-2504
The assumptions behind a new lifetesting approach are documented, evaluated, and tested where possible. This approach utilizes “signature parameters” to track individual degradation mechanisms in both DC and RF lifetests, and determines the mean
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fd181a7e08946621981f65787fc1ca8
https://doi.org/10.1016/j.microrel.2015.09.024
https://doi.org/10.1016/j.microrel.2015.09.024
Publikováno v:
Microelectronics Reliability. 43:845-851
A reliability study has been conducted on capacitors made with 100 nm of silicon nitride, in an InP HEMT MMIC fabrication process. Special wafers were fabricated, containing 1482 200 /spl mu/m/spl times/200 /spl mu/m capacitors each, and these were p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f429b7ed6d254415a0f117eb9ae06f0
https://doi.org/10.1016/s0026-2714(03)00069-6
https://doi.org/10.1016/s0026-2714(03)00069-6
Publikováno v:
Microelectronics Reliability. 43:853-858
Thermal resistances in InP-based HBTs have been determined by electrical measurement and finite-difference calculation. These devices contain substantial layers of ternary alloys, whose thermal conductivities are not well documented, although they ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fe0810156d7bc20fa527631066e4d0a4
https://doi.org/10.1016/s0026-2714(03)00070-2
https://doi.org/10.1016/s0026-2714(03)00070-2
Autor:
Adele E. Schmitz, R.H. Walden, Loi D. Nguyen, Kenny C. Hum, Richard C. Wong, B.M. Paine, Michael J. Delaney
Publikováno v:
Microelectronics Reliability. 41:1115-1122
The reliability of AlInAs/GaInAs high electron mobility transistor (HEMT) monolithic microwave integrated circuits on InP substrates from HRL Labs has been studied with elevated-temperature lifetests on Ka-band LNAs, as well as ramped-voltage tests o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4f633ac88d9fe688b6c3115fc2d56cf
https://doi.org/10.1016/s0026-2714(01)00083-x
https://doi.org/10.1016/s0026-2714(01)00083-x
Publikováno v:
JEDEC (formerly the GaAs REL Workshop) ROCS Workshop, 2004..
We have conducted accelerated lifetesting on discrete HBTs fabricated with the IBM SiGe5HP HBT technology, and determined the dependence of the wear-out on emitter interconnect temperature and current density. The wearout occurred by degradation of D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74a1be4d59ac96898dc20979cf413ee4
https://doi.org/10.1109/rocs.2004.184344
https://doi.org/10.1109/rocs.2004.184344
Publikováno v:
GaAs Reliability 2002 Workshop.
Summary form only given. It has been pointed out by Henderson (1996) and others that HBTs are vulnerable to recombination-enhanced defect reactions (REDRs), which can lead to formation of crystal defects with activation energies (E/sub a/'s) as low a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a407d5a421b5eeda519d9a3679b0f279
https://doi.org/10.1109/gaas.2002.1167929
https://doi.org/10.1109/gaas.2002.1167929
Publikováno v:
Proceedings GaAs Reliability Workshop, 2003..
We have used high-resolution transmission electron microscopy (HRTEM), with focused-ion-beam preparation of foils, to study InP HBT devices, both as-fabricated and after aging in life tests. The technology is HRL's G1 process. We found that even afte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9b0f204ce3adb24dec4b0ca74100bb2
https://doi.org/10.1109/gaasrw.2003.183769
https://doi.org/10.1109/gaasrw.2003.183769
Autor:
H. Kanber, B.M. Paine, S. Janesch, C.S. Wu, S.X. Bar, D. Kaputa, W. Yau, W. Fabian, Z. Bardai
Publikováno v:
1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).
Design translation is demonstrated at X-Band utilizing a multifunction MMIC as a test vehicle. The MMIC circuit consisting of a switch, LNA and attenuator is fabricated using PHEMT materials at two different GaAs foundries (Hughes and Martin Marietta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94271956a1f33817191ec66ebb81bfd3
https://doi.org/10.1109/mwsym.1994.335549
https://doi.org/10.1109/mwsym.1994.335549
Publikováno v:
2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).
Accelerated lifetests have been conducted on AlInAs-GaInAs HBT devices on InP wafers. Current densities were relatively high, while junction temperatures were low enough (125 and 160/spl deg/C) to provide a check for low activation energy failures. 4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d48026eaecf12b30773d5b3d8a7ec921
https://doi.org/10.1109/relphy.2001.922903
https://doi.org/10.1109/relphy.2001.922903
Publikováno v:
2000 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.00TH8513).
We report on reliability tests on InP HEMT MMICs by two approaches. First we describe elevated-temperature lifetests on Ka-band LNA MMICs, for studying all thermally-driven degradation mechanisms. Then we describe ramped-voltage studies of separate c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18b4094b8b11e7d030c8f125acc71768
https://doi.org/10.1109/gaasrw.2000.902417
https://doi.org/10.1109/gaasrw.2000.902417