Zobrazeno 1 - 10
of 34
pro vyhledávání: '"B.M. Haugerud"'
Autor:
Paul W. Marshall, Akil K. Sutton, C.A. Burfield, K. Jobe, D.L. Hansen, Barry K. Gilbert, Laleh Najafizadeh, Martin A. Carts, Cheryl J. Marshall, A.L. McKay, B.M. Haugerud, Wei-Min Kuo, John D. Cressler, R. Krithivasan, B.A. Randall, M.D. Lindberg, Erik S. Daniel, Guofu Niu, Robert A. Reed, Mustayeen B. Nayeem
Publikováno v:
IEEE Transactions on Nuclear Science. 53:3400-3407
Shift registers featuring radiation-hardening-by-design (RHBD) techniques are realized in IBM 8HP SiGe BiCMOS technology. Both circuit and device-level RHBD techniques are employed to improve the overall SEU immunity of the shift registers. Circuit-l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d923eeb80936cbd07353645acccb2dba
https://doi.org/10.1109/tns.2006.885379
https://doi.org/10.1109/tns.2006.885379
Autor:
John D. Cressler, Xuefeng Liu, A. P. Gnana Prakash, Paul W. Marshall, B.M. Haugerud, Tianbing Chen, A. Doolittle, Akil K. Sutton, Walter Henderson, Alvin J. Joseph
Publikováno v:
Solid-State Electronics. 50:1194-1200
The thermodynamic stability of device-relevant epitaxial SiGe strained layers under proton irradiation is investigated using X-ray diffraction techniques, and compared with its stability constrain under high-temperature annealing. Irradiation with 63
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45cdef195afcfc2f670665f04f560686
https://doi.org/10.1016/j.sse.2006.05.018
https://doi.org/10.1016/j.sse.2006.05.018
Autor:
Leonard R. Rockett, Monir El-Diwany, Tuyet Bach, Paul W. Marshall, Cheryl J. Marshall, B.M. Haugerud, Reed K. Lawrence, Courtney Mitchell, Akil K. Sutton, John D. Cressler, J.P. Comeau, A. P. Gnana Prakash, Ray Ladbury, Nadim F. Haddad, Mustansir M. Pratapgarhwala
Publikováno v:
Solid-State Electronics. 50:181-190
The effects of proton and gamma irradiation on a new commercially available SiGe technology are investigated for the first time. The results of proton irradiation on a differential SiGe HBT LC oscillator are also reported in order to gauge circuit-le
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7eb9a1badf9669719a6fd11305aed1f8
https://doi.org/10.1016/j.sse.2005.11.007
https://doi.org/10.1016/j.sse.2005.11.007
Autor:
Tianbing Chen, Cheryl J. Marshall, Akil K. Sutton, Alvin J. Joseph, C.M. Grens, B.M. Haugerud, Paul W. Marshall, John D. Cressler
Publikováno v:
IEEE Transactions on Nuclear Science. 52:2403-2407
The effect of proton irradiation on operating voltage constraints in SiGe HBTs is investigated for the first time in 120 GHz and 200 GHz SiGe HBTs. A variety of operating bias conditions was examined during irradiation, including terminals grounded,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a100371ad984da264708e212bbfb41c1
https://doi.org/10.1109/tns.2005.860700
https://doi.org/10.1109/tns.2005.860700
Autor:
Cheryl J. Marshall, Bongim Jun, Akil K. Sutton, Paul W. Marshall, Alvin J. Joseph, Raymond L. Ladbury, A.P.G. Prakash, John D. Cressler, Fernando Guarin, B.M. Haugerud
Publikováno v:
IEEE Transactions on Nuclear Science. 52:2358-2365
We present the results of gamma irradiation on third-generation, 200 GHz SiGe HBTs. Pre- and post-radiation dc figures-of-merit are used to quantify the tolerance of the raised extrinsic base structure to Co-60 gamma rays for varying device geometrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ed42497de12abdcd6379f37e253f15d
https://doi.org/10.1109/tns.2005.860728
https://doi.org/10.1109/tns.2005.860728
Autor:
T.H. Ning, Akil K. Sutton, Cheryl J. Marshall, Qingqing Liang, John D. Cressler, Tianbing Chen, Paul W. Marshall, Marco Bellini, J.P. Comeau, B.M. Haugerud, Jin Cai
Publikováno v:
IEEE Transactions on Nuclear Science. 52:2353-2357
Proton radiation effects in vertical SiGe HBTs fabricated on CMOS-compatible silicon-on-insulator (SOI) are investigated for the first time. Proton irradiation at 63 MeV is found to introduce base leakage current at low base-emitter voltage, delay th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12e8c80694445a00e326c44a42d0ebdd
https://doi.org/10.1109/tns.2005.860726
https://doi.org/10.1109/tns.2005.860726
Autor:
Rona E. Belford, Alvin J. Joseph, B.M. Haugerud, Yuan Lu, Chendong Zhu, John D. Cressler, Mustayeen B. Nayeem, R. Krithivasan
Publikováno v:
Solid-State Electronics. 49:986-990
This work presents the results of the effects of mechanical planar biaxial tensile strain applied, post-fabrication, to Si/SiGe HBT BiCMOS technology. Planar biaxial tensile strain was applied to the samples, which included both standard Si CMOS, SiG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5f44bc93c410b7d9d64ecb29835f13f
https://doi.org/10.1016/j.sse.2005.03.019
https://doi.org/10.1016/j.sse.2005.03.019
Autor:
Akil K. Sutton, Jae-Sung Rieh, Gregory G. Freeman, Paul W. Marshall, Robert A. Reed, B.M. Haugerud, Yuan Lu, John D. Cressler, David C. Ahlgren, Wei-Min Lance Kuo
Publikováno v:
IEEE Transactions on Nuclear Science. 51:3736-3742
We report, for the first time, the impact of proton irradiation on fourth-generation SiGe heterojunction bipolar transistors (HBTs) having a record peak unity gain cutoff frequency of 350 GHz. The implications of aggressive vertical scaling on the ob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7805fd65ef3e8eb94201dbf789b3d1f3
https://doi.org/10.1109/tns.2004.839302
https://doi.org/10.1109/tns.2004.839302
Autor:
Enhai Zhao, John D. Cressler, S. Balster, B. El-Kareh, H. Yasuda, Paul W. Marshall, Robert A. Reed, B.M. Haugerud, Akil K. Sutton
Publikováno v:
IEEE Transactions on Nuclear Science. 51:3243-3249
We present the first study of the effects of radiation on low-frequency noise in a novel complementary (npn+pnp) silicon-germanium (SiGe) HBT BiCMOS technology. In order to manipulate the physical noise sources in these complementary SiGe HBTs, 63.3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddf6d5d70eeda5190cff1e02f61cb3df
https://doi.org/10.1109/tns.2004.839138
https://doi.org/10.1109/tns.2004.839138
Autor:
David C. Sheridan, Tianbing Chen, Zhiyun Luo, Ayayi C. Ahyi, Robert A. Reed, Paul W. Marshall, John R. Williams, John D. Cressler, B.M. Haugerud, Akil K. Sutton
Publikováno v:
IEEE Transactions on Nuclear Science. 51:3748-3752
Proton irradiation is used to probe the physics of 4H-silicon carbide (SiC) Schottky barrier diodes (SBDs) and negative channel metal oxide semiconductor (nMOS) capacitors for the first time. Both 4H-SiC SBD diodes and SiC MOS structures show excelle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c688b3d86e4c2754c273817d7ec1af4
https://doi.org/10.1109/tns.2004.839254
https://doi.org/10.1109/tns.2004.839254