Zobrazeno 1 - 10
of 27
pro vyhledávání: '"B.K. Liew"'
Publikováno v:
IEEE Transactions on Electron Devices. 37:1343-1351
A vacancy-relaxation model is proposed. It predicts the DC lifetime, pulse DC (arbitrary unidirectional waveform) lifetime, pure AC lifetime, and AC-plus-DC-bias lifetime for all waveforms and all frequencies above 1 kHz. The predictions are verified
Autor:
C.H. Diaz, K.L. Young, J.H. Hsu, J.C.H. Lin, C.S. Hou, C.T. Lin, J.J. Liaw, C.C. Wu, C.W. Su, C.H. Wang, J.K. Ting, S.S. Yang, K.Y. Lee, S.Y. Wu, C.C. Tsai, H.J. Tao, S.M. Jang, S.L. Shue, H.C. Hsieh, Y.Y. Wang, C.C. Chen, S.C. Yang, S. Fu, S.Z. Chang, T.C. Lo, J.Y. Wu, J.S. Shy, C.W. Liu, S.H. Chen, B.L. Lin, B.K. Liew, T. Yen, C.H. Yu, Y.C. Chao, M.S. Liang, C. Wang, J.Y.C. Sun
Publikováno v:
1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325).
This paper describes a leading-edge 0.18 /spl mu/m CMOS logic foundry technology. Very aggressive design rules and borderless contacts render a 4.4 /spl mu/m/sup 2/ embedded (synchronous cache) 6T SRAM cell demonstrated in a 1 Mb vehicle with very hi
Autor:
A. Yen, H.T. Lin, Chih-Chiang Wang, Carlos H. Diaz, Y.C. Sun, B.K. Liew, S.Y. Wu, Y.F. Lin, D.S. Kuo
Publikováno v:
Scopus-Elsevier
In recent years, IC foundry leaders such as TSMC have invested heavily in leading edge process technologies. These technologies are developed to meet market demand from fabless, integrated device manufacturers as well as system companies. The applica
Publikováno v:
International Technical Digest on Electron Devices Meeting.
The authors present simulation results, an experimental technique, and a model for estimating the temperature rise and time-to-failure (TTF) of interconnect. They introduce the concept of derating factor for electromigration TTF due to self-heating.
Publikováno v:
InterSociety Conference on Thermal Phenomena in the Fabrication and Operation of Electronic Components. I-THERM '88.
Transient heat flow analysis using two-dimensional finite-element method has been used to calculate the temperature rise of aluminum lines on passivated and unpassivated silicon substrates. The results are used to predict the effect of self-heating o
Autor:
C.H. Ho, C.H. Chen, R.Y. Chang, C.H. Yu, L. Chen, S.M. Jang, J.K. Ting, H.J. Tao, S.L. Sue, R.Y. Shiue, Y.S. Ho, J.W. Weng, C.S. Hou, B.K. Liew, Candace Su-Jung Tsai, S.C. Sun, J.S. Shy, K.B. Cheng, C.C. Tu, Y.Y. Wang, T.Y. Chu, S.C. Yang, P.S. Wang, C.C. Tsai, M.H. Chang, T.N. Yen, Y.H. Chen, H.C. Hsieh, J.H. Hsu, Y.C. Huang, J.Y. Wu, K.H. Pan, J.Y.C. Sun, C.W. Liu
Publikováno v:
1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).
Summary form only given. A multiple-Vt high performance, high density and highly manufacturable 0.25 /spl mu/m CMOS technology with a shallow trench isolation process has been successfully developed. Five metal layers with oxide CMP planarization, et
Autor:
M. Chiang, C.C. Wu, K.H. Lee, S. Shue, C.C. Wang, Y.C. Sun, T.E. Chang, L.J. Chen, C.H. Diaz, M. Yu, C. Yang, S.M. Jang, C. Hu, J. Shih, C. Su, C.S. Hou, C.H. Wang, B. Chen, K. Pan, B.K. Liew, M. Chang, W. Chen, P. Lu, H. Su, Hun-Jan Tao, H.C. Hsieh, S. Chang
Publikováno v:
2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104).
This paper describes a leading-edge 0.15 /spl mu/m CMOS logic foundry technology family. Advanced core devices using 20 /spl Aring/ oxides for 1.2-1.5 V operation (L/sub G min/=0.1 /spl mu/m) support high-performance CPU and graphics applications. Th
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Publikováno v:
28th International Reliability Physics Symposium.
A previously developed model for predicting interconnect electromigration time-to-failure under arbitrary current waveforms is shown to be applicable to Al-W intermetallic contacts as well. This model is incorporated in a circuit electromigration rel
Publikováno v:
27th International Reliability Physics Symposium.
A vacancy relaxation model which predicts the DC lifetime, pulse DC lifetime, and AC lifetime for all waveforms and all frequencies above 10 kHz is proposed. The AC lifetimes of aluminum interconnect are experimentally found to be more than 10/sup 3/