Zobrazeno 1 - 10
of 642
pro vyhledávání: '"B.J. Sealy"'
Autor:
B.J. Sealy, Mohammad R. Alenezi, Kandil M. Kandil, Abdullah M. Almeshal, Nick Bennett, Talal H. Alzanki, Jafar M, Adel A. Ghoneim
Publikováno v:
SOJ Materials Science & Engineering. 2:01-06
The sheet resistance of the doped region in ultra-shallow junctions is critical to the speed of non-strained engineered integrated circuits. Maintaining low sheet resistance for antimony Sb implanted in Si is a difficult challenge to meet the perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78ee06e511a1e3a3dbc6e8c53e5ba7e4
https://doi.org/10.15226/sojmse.2014.00112
https://doi.org/10.15226/sojmse.2014.00112
Autor:
Chris Jeynes, Mohammad R. Alenezi, Talal H. Alzanki, Naziha M. Aldukhanand, Adel A. Ghoneim, Abdullah M. Almeshal, B.J. Sealy, Kandil M. Kandil
Publikováno v:
Journal of Materials Science and Engineering A. 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74efdfc40619fdd46374ab85189a373e
https://doi.org/10.17265/2161-6213/2016.1-2.002
https://doi.org/10.17265/2161-6213/2016.1-2.002
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 268:2051-2055
High fluence (>1017 H/cm2) ion implantation of H in GaAs is suitable for the ion cut process, and produces H bubbles under the surface which may cause blistering. By comparing the destructive depth profiling of these implants by secondary ion mass sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd062b308424749e48165b097431de31
https://doi.org/10.1016/j.nimb.2010.02.033
https://doi.org/10.1016/j.nimb.2010.02.033
Autor:
Ken Horan, Nick E. B. Cowern, T. Tuomi, Nick Bennett, B.J. Sealy, Aapo Lankinen, L. O’Reilly, Patrick J. McNally
Publikováno v:
Materials science and engineering / B 154-155, 118-121 (2008). doi:10.1016/j.mseb.2008.09.007
Horan, Ken, Lankinen, Aapo, O'Reilly, Lisa, Bennett, N.S., McNally, Patrick J. ORCID: 0000-0003-2798-5121, Sealy, B.J., Cowern, N.E.B. and Tuomi, Tiinamaija (2008) Structural and electrical characterisation of ion-implanted strained silicon. Materials Science and Engineering: B, 154-15 . pp. 118-121. ISSN 0921-5107
Horan, Ken, Lankinen, Aapo, O'Reilly, Lisa, Bennett, N.S., McNally, Patrick J. ORCID: 0000-0003-2798-5121
The production of low resistance ultra-shallow junctions for e.g. source/drain extensions using low energy ion-implantation will be required for future CMOS devices [H. Wakabayashi, M. Ueki, M. Narihiro, T. Fukai, N. Ikezawa, T. Matsuda, K. Yoshida,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08143f850298c090bc26b2d90e6c2fd2
https://doi.org/10.1016/j.mseb.2008.09.007
https://doi.org/10.1016/j.mseb.2008.09.007
Autor:
Nick E. B. Cowern, Russell M. Gwilliam, Tcq Noakes, Nick Bennett, Massimo Bersani, M. Kah, Paul Bailey, Damiano Giubertoni, A. J. Smith, B.J. Sealy
Publikováno v:
Materials Science and Engineering: B. :229-233
Strained Si channels are commonly used by manufacturers to enhance CMOS performance and research into novel channel materials (SiGe and Ge) is well underway. How these materials affect the electrical properties of the impurities used to dope them is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af8b6e9c87d68e228267c172939e3662
https://doi.org/10.1016/j.mseb.2008.10.003
https://doi.org/10.1016/j.mseb.2008.10.003
Autor:
Andrew J. Smith, Silke Paul, Russell M. Gwilliam, B. Colombeau, Nick Bennett, N. E. B. Cowern, B.J. Sealy, Roger P. Webb, A. Pakfar, Wilfried Lerch
Publikováno v:
Materials Science Forum. :295-304
This paper reviews the physics and the potential application of ion-implanted vacancies for high-performance B-doped ultra-shallow junctions. By treatment of silicon films with vacancygenerating implants prior to boron implantation, electrically acti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81f3eea6f1637e0d5350332faec265a5
https://doi.org/10.4028/www.scientific.net/msf.573-574.295
https://doi.org/10.4028/www.scientific.net/msf.573-574.295
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 261:600-603
Vacancy engineering has been proven to be a viable alternative to pre-amorphisation and solid phase epitaxy for creating ultra-shallow junctions. This paper investigates the effect of implantation order – i.e. whether the dopant implant is preceded
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a965b9bec9c834e2078386ac7db9bec3
https://doi.org/10.1016/j.nimb.2007.04.048
https://doi.org/10.1016/j.nimb.2007.04.048
Publikováno v:
Materials Science and Engineering: B. :305-309
Determining the electrical characteristics of doped layers is a key challenge in understanding the success of the ion implantation and an anneal process. Hall measurements have the ability to measure the electrical activation and the carrier mobility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0aad0967b39f728b5e2fee52c54dfd7
https://doi.org/10.1016/j.mseb.2005.08.020
https://doi.org/10.1016/j.mseb.2005.08.020
Publikováno v:
Materials Science and Engineering: B. :453-457
The search for cold electron field emission materials, with low threshold fields, compatible with existing integrated circuit fabrication has continued to attract a significant research interest over the past several years. This is primarily driven b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42537f8113b272c30a5a81ae20ab4406
https://doi.org/10.1016/j.mseb.2005.08.044
https://doi.org/10.1016/j.mseb.2005.08.044
Publikováno v:
Materials Science and Engineering: B. :196-199
The work carried out here examines the suitability of BBr 2 + and B + + Br + implants into crystalline (1 0 0) silicon for ultra-shallow junctions (USJ) applications. Rutherford backscattering spectroscopy (RBS) shows that an amorphous region is crea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c5583035e7d814a6ccb6c3e5acdca4d
https://doi.org/10.1016/j.mseb.2005.08.065
https://doi.org/10.1016/j.mseb.2005.08.065