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pro vyhledávání: '"B.J. Gross"'
Akademický článek
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Publikováno v:
Journal of Computational Physics. 453:110932
We develop numerical methods for computing statistics of stochastic processes on surfaces of general shape with drift-diffusion dynamics $d\mathbf{X}_t = a(\mathbf{X}_t)dt + \mathbf{b}(\mathbf{X}_t)d\mathbf{W}_t$. We formulate descriptions of Brownia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6832cfbab39f3a45ea9248d21507d564
https://doi.org/10.1016/j.jcp.2021.110932
https://doi.org/10.1016/j.jcp.2021.110932
Akademický článek
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Akademický článek
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Publikováno v:
IEEE Transactions on Electron Devices. 39:677-684
The inversion layer mobility of reoxidized nitrided oxide (RNO) n-MOSFETs (and, to a lesser degree, p-MOSFETs) is found to increase after irradiation and subsequent low-temperature anneal, a process sequence which occurs in X-ray or electron-beam lit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e56ff6693b10f2abc9cb69c6c2ab0bb7
https://doi.org/10.1109/16.123494
https://doi.org/10.1109/16.123494
Publikováno v:
Journal of Applied Physics. 70:2185-2194
The charge‐trapping characteristics of nitrided oxide and reoxidized nitrided oxide (ROXNOX) gate dielectrics following constant‐current stressing are studied, with an emphasis on the behavior of positive trapped charge. The positive charge is at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::448700746ad8f0d246ac24fa3bc9f852
https://doi.org/10.1063/1.349457
https://doi.org/10.1063/1.349457
Publikováno v:
IEEE Transactions on Electron Devices. 38:2036-2041
The electrical characteristics of thin (10 nm) MOS gate dielectrics formed at 850 degrees C by low-pressure furnace nitridation of SiO/sub 2/ followed by an oxygen anneal (reoxidation) are described. The ROXNOX process is demonstrated to be readily s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64e0a0e177d603e498c34fde92b5f02f
https://doi.org/10.1109/16.83727
https://doi.org/10.1109/16.83727
Autor:
Paul A. Hyde, Richard Q. Williams, Jonghae Kim, W. Clark, V. Karam, B.J. Gross, Jean-Olivier Plouchart, Robert Trzcinski, Kun Wu, Myung-Hee Na, J. Mc Cullen
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
This paper reports the SOI 90 nm statistical model to hardware correlation achieved over a broad voltage, temperature and a variety of five different ring oscillators. Monte Carlo simulations were performed and compared with the measured circuit stat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::984165a78ca46309da00bcf41234fdf8
https://doi.org/10.1109/iedm.2005.1609540
https://doi.org/10.1109/iedm.2005.1609540
Autor:
Jean-Olivier Plouchart, Kun Wu, Moon J. Kim, B.J. Gross, Noah Zamdmer, Jonghae Kim, Robert Trzcinski
Publikováno v:
ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005..
A differentially tuned VCO is fully integrated in a standard microprocessor 0.12 /spl mu/m SOI CMOS. A phase noise of -101.8dBc/Hz at 1MHz offset is measured with 7.5mW at 1.5V. The VCO tuning range is 9.8% from 40GHz to 44GHz. The output power is up
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e85381c9c83e63424657642717ceda34
https://doi.org/10.1109/isscc.2005.1494046
https://doi.org/10.1109/isscc.2005.1494046
Autor:
Z.H. Liu, B.J. Gross, Chenming Hu, Tso-Ping Ma, Elyse Rosenbaum, C.G. Sodini, Y.C. Cheng, P.K. Ko
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
High field endurances of reoxidized-nitrided oxide (RNO), and fluorinated oxide (FOX) under dynamic Fowler-Nordheim stress were compared with that of conventional oxide. Time-dependent dielectric breakdown (TDDB) of RNO and FOX is shown to be strongl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f47981dd3b0bfdca7c3b2cbb44d62b23
https://doi.org/10.1109/iedm.1991.235321
https://doi.org/10.1109/iedm.1991.235321