Výsledky vyhledávání - "B.H. van Roy"

Vertical integration of dual wavelength index guided lasers

Autor: B.H. van Roy, Chennupati Jagadish, F Fouad Karouta, H.H. Tan

Publikováno v: Electronics Letters, 35(10), 815-817. Institution of Engineering and Technology (IET)

The vertical integration of two GaAs-based lasers operating at different wavelengths has been achieved with the use of re-growth technology. A V-channel substrate inner stripe structure was used for the bottom laser and a ridge waveguide for the top

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e243520fd885137fe22a0f8b03ebedef
https://doi.org/10.1049/el:19990554

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Sealing method of dry etched AlAs/GaAs top mirrors in vertical cavity surface emitting lasers

Autor: T.G. van de Roer, B.H. van Roy, F. de Bruyn, F Fouad Karouta, Martinus Petrus Creusen, W.C. van der Vleuten, E. Smalbrugge

Publikováno v: Electrochemical and Solid-State Letters, 2(2), 83-85. Electrochemical Society, Inc.

A versatile sealing process for AlAs layers is presented. This sealing prevents the AlAs layers of AlAs/GaAs top distributed Bragg reflectors from further undesired oxidation during the wet oxidation of the AlAs current constriction layers in vertica

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f699d2dd72cab410b13835d56730d70
https://doi.org/10.1149/1.1390742

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Asymmetric, Low Confinement GaAs/AIGas DQW Laser Diode with Optical Trap Layer for High Power Operation

Autor: G. Iordache, T.G. van de Roer, E. Smalbrugge, G.A. Acket, Manuela Buda, W.C. van der Vleuten, C.M. van Es, B.H. van Roy

Publikováno v: CLEO/Europe Conference on Lasers and Electro-Optics.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::634802579d8b93211aebf35b11c364a4
https://doi.org/10.1109/cleoe.1998.719030

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Stress-induced effects by the anodic oxide in ridge waveguide laser diodes

Autor: G.A. Acket, B.H. van Roy, Carl Sys, M. Buda, T.G. van de Roer, L.M.F. Kaufmann, E. Smallbrugge, Ingrid Moerman, G. Iordache

Publikováno v: IEEE Journal of Quantum Electronics, 36(10), 1174-1183. Institute of Electrical and Electronics Engineers

This paper studies, both theoretically and experimentally, stress-induced effects on the lateral far-field behavior for ridge-type semiconductor laser diodes where anodic oxide is used for the definition of the stripe width. These effects consist of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f65185c20359115b87ca1b5dac17957
https://research.tue.nl/nl/publications/d9c2931e-8c67-4633-b5dd-32f3b2eee4a3

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Low-loss, low-confinement GaAs-AlGaAs DQW laser diode with optical trap layer for high-power operation

Autor: E. Smalbrugge, C.M. van Es, T.G. van de Roer, W.C. van der Vleuten, B.H. van Roy, G.A. Acket, G. Iordache, M. Buda

Publikováno v: IEEE Photonics Technology Letters, 11(2), 161-163. Institute of Electrical and Electronics Engineers

A low-confinement asymmetric GaAs-AlGaAs double-quantum-well molecular-beam-epitaxy grown laser diode structure with optical trap layer is characterized, The value of the internal absorption coefficient is as low as 1.4 cm/sup -1/, while keeping the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1319ca187e047cf744fbff17578f9128
https://research.tue.nl/nl/publications/b078b5cd-032a-49e2-8eab-967c0a0e2e39

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Progress in reactive ion etching of epitaxial GaN

Autor: P. Vreugdewater, B.H. van Roy, F Fouad Karouta, M. Heuken, B. Jacobs, H. Protzmann, O. Schoen

Publikováno v: Proc. Conference on Optoelectronics and Microelectronics Materials and Devices (COMMAD), 171-174
STARTPAGE=171;ENDPAGE=174;TITLE=Proc. Conference on Optoelectronics and Microelectronics Materials and Devices (COMMAD)
Proc. 1st STW workshop on Semiconductor Advances for Future Electronics, SAFE 98, 263-264
STARTPAGE=263;ENDPAGE=264;TITLE=Proc. 1st STW workshop on Semiconductor Advances for Future Electronics, SAFE 98

Reactive Ion Etching (RIE) of GaN epitaxially grown on (0001) sapphire substrate has been investigated using various chemistries based on SiCl/sub 4/, Ar and SF/sub 6/. Plasma deposited SiN/sub x/ is used for masking. We studied the influence of gas

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c22855fe72560ae7010a19725d617d5d
https://research.tue.nl/nl/publications/bf181613-1741-437c-a4c7-b0b7263f9974

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Vertical integration of dual wavelength index guided GaAs-lasers

Autor: H.H. Tan, F Fouad Karouta, Chennupati Jagadish, B.H. van Roy

Publikováno v: Scopus-Elsevier

We present a vertically integrated GaAs-InGaAs double QW laser device. The two wavelengths can be designed fully independent of each other. Both lasers are index-guided and hence capable of emitting light in the lateral fundamental mode. In our case

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c297aa6ddc74821cf543026f912600b7
http://www.scopus.com/inward/record.url?eid=2-s2.0-0032288132&partnerID=MN8TOARS

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