Zobrazeno 1 - 10
of 33
pro vyhledávání: '"B.H. Rose"'
Publikováno v:
The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991.
The development of monolithic GaAs photovoltaic devices intended to convert light generated by a laser or other bright source to electricity is reported. The converters described can provide higher operating voltage than is possible using a single-ju
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77c55e71f328b73ad5c39e323f276aec
https://doi.org/10.1109/pvsc.1991.169198
https://doi.org/10.1109/pvsc.1991.169198
Autor:
S.P. Kilcoyne, P.K. Seigal, T.C. Du, Richard F. Carson, D.C. Craft, Mial E. Warren, O. Blum, B.H. Rose, Kevin L. Lear, M.L. Lovejoy
Publikováno v:
1995 Proceedings. 45th Electronic Components and Technology Conference.
New applications of photonic interconnects will involve the insertion of parallel-channel links into Multi-Chip Modules (MCMs). Such applications will drive photonic link components into more compact forms that consume far less power than traditional
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06024a4c0f621c17dd1a4be155087d22
https://doi.org/10.1109/ectc.1995.514411
https://doi.org/10.1109/ectc.1995.514411
Autor:
D.C. Craft, D. J. Rieger, D.B. Slater, Randy J. Shul, Richard F. Carson, J.A. Hutchby, M.L. Lovejoy, B.H. Rose, Gary A. Patrizi, P.M. Enquist
Publikováno v:
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995.
Low-power photoreceivers based on InGaAs/InP heterojunction bipolar transistors (HBTs) and p-i-n diodes for highly-parallel optical data links have been designed, fabricated and characterized. The receivers are designed to operate from 980 nm to over
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f66a9047fb510d853382ad4024eb6511
https://doi.org/10.1109/gaas.1995.528989
https://doi.org/10.1109/gaas.1995.528989
Autor:
B.H. Rose
This report describes the characteristics of photovoltaic arrays that maybe suitable for use with nanosatellite electronic systems. It includes a thorough literature search on power management and distribution systems for satellites as small as micro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d955ae28bb7fe2badc64ac1cf30255d6
https://doi.org/10.2172/9723
https://doi.org/10.2172/9723
Autor:
B.H. Rose
This report describes the design features of series connected photovoltaic arrays which will be required to charge capacitors to relatively high (400V) voltages in time periods on the order of 1 microsecond. The factors which determine the array volt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::323cf947ddf6958462ef9490637b735e
https://doi.org/10.2172/534540
https://doi.org/10.2172/534540
Autor:
B.H. Rose
Publikováno v:
IEEE Transactions on Electron Devices. 31:559-565
Measurements of the transient decay of short-circuit current and open-circuit voltage of solar cells provide sufficient information, in principle, to determine both the effective back-surface recombination velocity S and the base minority-carrier lif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b9c9301c4aa98e0d961f15cd10aacfc
https://doi.org/10.1109/t-ed.1984.21569
https://doi.org/10.1109/t-ed.1984.21569
Autor:
D.L. Cowan, B.H. Rose
Publikováno v:
Solid State Communications. 15:775-778
Electric-field-induced alignment of V− centers in MgO crystals has been monitored by the ensuing dichroism in the 2.3 eV optical absorption band. The effective electric dipole moment is μ = 3.4±0.4 e A , and the centers respond freely to the appl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b064a4875a44bd6a587646ca14e119d
https://doi.org/10.1016/0038-1098(74)90259-2
https://doi.org/10.1016/0038-1098(74)90259-2
Publikováno v:
Solar Cells. 6:49-58
Efficiencies equalling 20% were measured for solar concentrations from 20 to 100 suns on planar p+-n-n+ silicon concentrator cells. These cells were fabricated on 0.3 Ω cm n-type (100) float zone silicon wafers which were 300 μm thick. To attain a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db97b5b14a52dba4bbea4274d54c31d1
https://doi.org/10.1016/0379-6787(82)90017-5
https://doi.org/10.1016/0379-6787(82)90017-5
Autor:
R.G. Keefe, B.H. Rose
Many optoelectronic components for weapons systems application require photodetectors for converting optical signals to electric signals. These detectors generally require radiation tolerance and must be amenable to high reliability fabrication proce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fee21d898e9bcf1b2abb1a368b928831
https://doi.org/10.2172/6000907
https://doi.org/10.2172/6000907
Lifetime and effective surface recombination velocity measurements in high-efficiency Si solar cells
Autor:
B.H. Rose
Publikováno v:
1981 International Electron Devices Meeting.
A conventional analysis method, based on minority carrier diffusion in a solar cell base, is used to obtain bulk lifetime (τ) and effective back-surface recombination velocity (S) from measurements of asymptotic decay times of short-circuit current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f6ce765cdd95cfc76e06b320f2a608a
https://doi.org/10.1109/iedm.1981.190023
https://doi.org/10.1109/iedm.1981.190023