Zobrazeno 1 - 10
of 280
pro vyhledávání: '"B.G. Streetman"'
Autor:
B.G. Streetman, K. Sadra
Publikováno v:
Solid-State Electronics. 35:1139-1149
We present a Monte-Carlo study of minority-electron transport in p-GaAs including dynamic screening and plasmon-phonon couping using a phenomenologically damped quasi-nonequilibrium two-band dielectric function. Calculated mode spectra contain the ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cced10dbab39a0a4388068d875b5f764
https://doi.org/10.1016/0038-1101(92)90015-5
https://doi.org/10.1016/0038-1101(92)90015-5
MBE growth of multilayer heterostructures with applications to optoelectronic and electronic devices
Autor:
B.G. Streetman
Publikováno v:
International Electron Devices and Materials Symposium.
One of the most exciting and useful developments in modern semiconductor electronics is the capability of engineering band structure, quantum phenomena, optical properties, and other useful effects by the growth of multilayer heterostructures. With t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fc94712ae52a9bdbc4b9a665e765954
https://doi.org/10.1109/edms.1994.771097
https://doi.org/10.1109/edms.1994.771097
Publikováno v:
Quantum Optoelectronics.
There is currently a great deal of interest in the use of small optical cavities to control the spontaneous emission characteristics from semiconductor light emitting diodes and lasers. Predictions of the magnitude to which the effect may be realized
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a0d2e50dd5af8d5178b673e2bb591be
https://doi.org/10.1364/qo.1993.qwa.4
https://doi.org/10.1364/qo.1993.qwa.4
Publikováno v:
IEEE Transactions on Electron Devices. 38:2699
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9eb2d8bb00e46c52953d8980025c57e
https://doi.org/10.1109/16.158716
https://doi.org/10.1109/16.158716
Autor:
B.G. Streetman, J.D. Oberstar
Publikováno v:
Surface Science. 108:L470-L476
We have observed a radiative transition (1.306 eV) in the photoluminescence spectra of InP which we show is due to near surface states created by surface damage.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd9d60d709f4430a452f3eb1e1fd23aa
https://doi.org/10.1016/0039-6028(81)90556-2
https://doi.org/10.1016/0039-6028(81)90556-2
Autor:
B.G. Streetman, A.J. Rosa
Publikováno v:
Journal of Luminescence. 16:191-199
Analysis of edge emission spectra of Na-diffused ZnSe is compared with theoretical predictions of donor-acceptor transition behavior. It is found that the R 0 series fits the criteria for D—A transitions. Mass analysis of the samples studied tends
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34e39dbf387c651bd5b758f4ad0fd336
https://doi.org/10.1016/0022-2313(78)90018-2
https://doi.org/10.1016/0022-2313(78)90018-2
Autor:
B.G. Streetman, C.W. Farley
Publikováno v:
IEEE Transactions on Electron Devices. 34:1781-1787
A special four-terminal MESFET (HFET) is employed in a unique way to characterize carrier concentration and mobility profiles of channel implants into GaAs. This device allows measurement of carrier concentration and mobility under forward gate bias
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45130eb91f26aa96dab6868fca0956fd
https://doi.org/10.1109/t-ed.1987.23151
https://doi.org/10.1109/t-ed.1987.23151
Autor:
J. D. Oberstar, B.G Streetman
Publikováno v:
Thin Solid Films. 103:17-26
Methods for protecting GaAs and InP surfaces against degradation during annealing are reviewed. Various thin film encapsulants are discussed, including SiO2, Si3N4 and doped glasses. A discussion of deposition methods and thin film evaluation techniq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0387dce8a36316605f2143f5e2a1cb70
https://doi.org/10.1016/0040-6090(83)90421-2
https://doi.org/10.1016/0040-6090(83)90421-2
Autor:
S.D. Lester, B.G. Streetman
Publikováno v:
Superlattices and Microstructures. 2:33-40
In this paper we review the special properties of compound semiconductors which make them attractive for device applications and discuss current research issues concerning the propessing of III–V compounds and heterojunction multilayers. The novel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::882c53758f68e1078370045ccbe8bcde
https://doi.org/10.1016/0749-6036(86)90150-3
https://doi.org/10.1016/0749-6036(86)90150-3
Publikováno v:
Applied Physics Letters. 11:200-202
Current oscillations in the positive resistance region of the forward characteristics of Co‐doped Si p‐i‐n devices are described. The oscillations are sinusoidal, independent of device length, and are strongly affected by optical excitation and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90f6937a55ee78d27c62a84309e3aa15
https://doi.org/10.1063/1.1755096
https://doi.org/10.1063/1.1755096