Zobrazeno 1 - 10
of 25
pro vyhledávání: '"B.G. Pantchev"'
Publikováno v:
Thin Solid Films. 330:150-156
An optical waveguide structure consisting of side-polished single-mode fiber covered with thin a-Si:H planar waveguide is studied as a channel-dropping narrow-band filter and fiber-optic polarizer. Spectral and polarization characteristics of the str
Autor:
B.G. Pantchev, Z. Nikolov
Publikováno v:
Journal of Modern Optics. 41:543-551
A method for the optimization of homogeneous reflecting waveguide lens systems by means of ray tracing is described. An approach for the automatic correct synthesis of the trial lens systems and a merit function, which provides very stable convergenc
Publikováno v:
Solar Energy Materials and Solar Cells. 31:301-306
Hydrogenated amorphous silicon films prepared by homogeneous chemical vapor deposition (HOMOCVD) process were studied with respect to their microstructure by field-assisted ion exchange (FAIE) techniques. Results concerning the influence of HOMOCVD p
Autor:
B.G. Pantchev, Z. Nikolov
Publikováno v:
Optics Communications. 89:131-134
An analytical method for optimization of aplanatic homogeneous refracting planar waveguide lenses is proposed. It is based on the use of the third-order aberration theory and stigmatic refracting contours. The wave aberrations of analytical optimized
Publikováno v:
physica status solidi (a). 122:599-605
The microstructure of CVD a-Si: H films is studied by means of IR absorption and field-assisted ion exchange. The decrease in microstructure with increasing substrate temperature is detected by both the methods. However, the amount of microstructure
Publikováno v:
Physica Status Solidi (a). 63:743-749
RHEED and TEM of surface replicas are used to study the crystallization processes taking place after ion implantation with silicon ions and subsequent temperature annealing of amorphous silicon layers deposited on {111} silicon substrates through spu
Field-assisted ion exchange for the detection of localized defects in thin films on glass substrates
Autor:
B.G. Pantchev, P. Danesh
Publikováno v:
Thin Solid Films. 161:85-91
A method of field-assisted Ag+Na+ ion exchange has been proposed for the determination of the number of localized defects behaving as piercing micro-openings in thin metal, semiconductor and insulator films deposited on glass substrates. The revea
Autor:
P. Danesh, B.G. Pantchev
Publikováno v:
Thin Solid Films. 88:347-352
The etching of crystalline quartz was carried out in a planar plasma reactor with radial gas flow in both the reactive ion etching and the plasma etching modes. The variation in the etching rate with parameters such as the pressure, the gas flow rate
Publikováno v:
Thin Solid Films. 106:137-144
The surface morphology of dry etched crystalline quartz was studied by transmission electron microscopy (replica technique). The experiments were carried out by reactive ion etching (RIE), plasma etching and argon sputter etching. Argon sputter etchi
Autor:
B.G. Pantchev, P. Danesh
Publikováno v:
Solar Energy Materials. 17:95-98
Glow discharge a-Si:H has been studied regarding micropore density in the films. These defects have been visualized by means of field-assisted silver ion exchange. It has been shown that a 5 × 10 3 cm −2 micropore density is an intrinsic feature o