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Publikováno v:
IEEE Photonics Technology Letters. 18:1898-1900
We discuss a new simple InGaAs-InAlAs avalanche photodiode (APD) with a planar buried multiplication region. Some of the advantages compared to standard APDs are as follows: 1) The thickness of the avalanche and the charge control regions are accurat
Publikováno v:
SPIE Proceedings.
We discuss a new simple InGaAs/InAlAs avalanche photodiode (APD) with a planar buried multiplication region. Some of the advantages compared to standard APDs are: 1. The thickness of the avalanche and the charge control regions are accurately control
Publikováno v:
10th Annual International Symposium on Geoscience and Remote Sensing.
Publikováno v:
OFC/NFOEC Technical Digest. Optical Fiber Communication Conference, 2005..
We present an avalanche photodiode (APD)-based receiver for 10 Gbit/s applications that achieves record-setting sensitivity of -29 dBm, and is based on a new, planar, InAlAs APD that is Telcordia qualified.
Autor:
B.F. Levine
Publikováno v:
IEEE Photonics Technology Letters. 8:1528-1530
Calculations are presented on the optimization of the high-frequency response of superlattice and bulk avalanche photodiodes (APD's). The thickness of the avalanche and absorption regions, as well as the electric fields in these layers are optimized,
Publikováno v:
Electronics Letters. 33:1165
The fabrication and performance characteristics of a receiver electronics array for optical data links and parallel optical interconnects are described. The 18-channel array operates at 622 Mbit/s with a 10-15 error rate.
Publikováno v:
Electronics Letters. 33:1254
The performance of a GaAs based optoelectronic receiver is described. The receiver has an MSM photodiode, a preamplifier, a postamplifier, a comparator, a decision circuit and an ECL driver, all integrated on the same chip. An error rate of
Autor:
B.F. Levine
Publikováno v:
Chemical Physics Letters. 37:516-520
The second order hyperpolarizability β has been measured for ortho-, meta- and para-nitroanaline. They are found to have anomalously large nonlinearities which can be quantitatively understood as due to the strong donor—acceptor charge transfer in
Autor:
B.F. Levine, C.G. Bethea
Publikováno v:
Applied Physics Letters. 20:272-275
We have measured the ratio d36(GaP)/d11(SiO2) = 185 ± 10% at 1.318 μ. By using this value together with other values in the literature, we determine a better set of absolute values for the nonlinear susceptibility.