Zobrazeno 1 - 10
of 10
pro vyhledávání: '"B.E. Ponga"'
Autor:
B.E. Ponga, D. Bertho, M Averous, Thierry Cloitre, D Boiron, P. Boring, Pierre Lefebvre, C. Jouanin
Publikováno v:
Semiconductor Science and Technology
Semiconductor Science and Technology, IOP Publishing, 1991, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 6 (9A), pp.A1-A7. ⟨10.1088/0268-1242/6/9A/001⟩
Semiconductor Science and Technology, IOP Publishing, 1991, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 6 (9A), pp.A1-A7. ⟨10.1088/0268-1242/6/9A/001⟩
International audience; A quite large programme on wide-gap II-VI materials has been developed in our group. The aim of this paper is to present this work. The choice of material, ZnSe based, is obviously due to the value of this gap (2.7 eV) at room
Autor:
Bernard Gil, B.E. Ponga, Thierry Cloitre, C. Jouanin, D. Bertho, Roger Aulombard, J.-M. Jancu, P. Boring, H. Mathieu, Olivier Briot
Publikováno v:
Physica B: Condensed Matter. 185:109-111
We have grown short-period ZnSe-ZnTe superlattices using low-pressure MOVPE. The influence of the growth parameters was investigated in detail. Combination of optical characterization with a tight-binding calculation gives a value of 200 meV for the
Autor:
Roger Aulombard, B.E. Ponga, Olivier Briot, N. Briot, Bernard Gil, Jean-Michel Sallese, P. Boring, Thierry Cloitre, M. Gailhanou, A.C. Jones
Publikováno v:
MRS Proceedings. 308
The ZnSe-ZnTe combination is a potential candidate for the realisation of visible light-emitting devices. The lattice mismatch between bulk ZnSe and bulk ZnTe is important (∼ 8%). Therefore, their hetero-structures are strained and high quality sup
Autor:
R. Accomo, N. Achtziger, S.J.A. Adams, I. Akasaki, J.P. Albert, H. Amano, R. André, A. Antonelli, M. Asif Khan, R.L. Aulombard, R.F. Austin, G. Balestrino, R. Baltramiejūnas, F. Bechstedt, N. Bécourt, L. Bergman, J. Bernholc, D. Bertho, CM. Bertoni, S. Billat, M. Boćkowski, C. Bodin, C. Bodin-Deshayes, E.B. Boiko, P. Boring, A. Bouhelal, G. Bratina, K.F. Brennan, P.R. Briddon, O. Briot, I. Broser, A. Bsiesy, E. Bucher, A. Burchard, G. Cantwell, C.H. Carter, T. Castro, B.C. Cavenett, D.J. Chadi, K.M. Chen, X. Chen, H. Cheng, W.J. Choyke, N.E. Christensen, J. Cibert, R. Cingolani, T. Cloitre, P.I. Cohen, A.T. Collins, H.L. Cotal, A. Cricenti, M. Dabbicco, L.S. Dang, R.F. Davis, M. Deicher, J.M. DePuydt, B. Dischler, V.A. Dmitriev, J.F. Donegan, J.P. Doran, J.J. Dubowski, L. Eckey, J.A. Edmond, A.L. Efros, R.J. Egan, F. Engelbrecht, W. Evstropov, M. Fanciulli, R.D. Feldman, A.C. Felici, M. Ferrara, L. Ferrari, D.K. Ferry, G. Feuillet, M. Fiedler, F. Finocchi, R. Fischer, G. Fishman, A. Franciosi, Ch. Fricke, S.I. Frolov, D. Fuchs, G. Galli, S.V. Gaponenko, F. Gaspard, V.I. Gavrilenko, V. Gavryushin, W. Gebhardt, I.N. Germanenko, J. Geurts, K.P. Geyzers, B. Gil, W. Gladfelter, G. Gleitsman, E.O. Göbel, C. Godet, O. Goede, I. Gorczyca, V.P. Gribkovskii, I. Grzegory, H.-E. Gumlich, R.L. Gunshor, A.L. Gurskii, J. Gutowski, F. Gygi, M.A. Haase, C Haberstroh, W.C. Harsch, I. Hauksson, S. Hayashi, J. Hegarty, W. Heimbrodt, K. Heime, V. Heine, R. Heitz, R. Helbig, B. Henderson, F. Henneberger, R. Hérino, J. Hermans, M. Heuken, A. Hoffmann, H. Hoffmann, N. Hoffmann, H. Hofsäss, T.P. Humphreys, R.W. Hunt, S. Iarlori, S. Iida, K. Ikoma, J.P. Itie, K. Jacobs, S.G. Jahn, J.M. Jancu, C. Jaussaud, T. Jentzsch, R.L. Johnson, R. Jones, C. Jouanin, P.H. Jouneau, J. Jun, V. Jungnickel, D. Juodžbalis, S.A. Kajihara, J. Kanicki, S. Karmann, H. Katayama-Yoshida, Y. Kawakami, A. Kazlauskas, A. Kean, M.R.H. Khan, R.D. King-Smith, H. Kinto, U. Kißmann, A. Klimakow, N.I. Klyui, N. Koide, P. Koidl, H.-S. Kong, H.S. Kong, Th. König, J. Kono, V.K. Kononenko, M. Kotaki, C. Kreß, T. Krings, St. Krukowski, V. Kubertavicius, G.H. Kudlek, W. Kuhn, K. Kunc, Y. Kuroda, J.N. Kuznia, K.W. Kwak, G. Labrunie, D.B. Laks, W.R.L. Lambrecht, S. Lankes, V. Yu. Lebed, T. Lei, S. Leibenzeder, M. Lepore, T. Licht, M. Ligeon, I. Yu. Linkov, E. Litwin-Staszewska, S. Logothetidis, G. Luce, E.V. Lutsenko, M. Ch. Lux-Steiner, F. Madéore, R. Magerle, H.-E. Mahnke, K. Maier, I.E. Malinovskii, K. Manabe, M. Marinelli, B.G. Markey, A. Markwitz, T. Marshall, H. Mathieu, H. Matsunami, J.O. McCaldin, T.C. McGill, S.W.S. McKeever, J. Meier, I. Mihalcescu, E. Milani, A.I. Mitcovets, T. Mitsuyu, N. Miura, R.J. Molnar, E. Molva, M. Morohashi, Ya.V. Morozenko, T.D. Moustakas, A. Mujica, G. Mula, F. Muller, W. Müller-Sebert, A. Muñoz, A. Mura, A. Naumov, R.J. Needs, R.J. Nemanich, R. Nicolini, A.V Nurmikko, K.P. O'Donnell, T. Oguchi, K. Ohkawa, S. Okamoto, N. Okazaki, H. Okumura, M.A. Osman, J.W. Palmour, E.C. Paloura, M. Palummo, A. Paoletti, A.M. Papon, P. Paroli, M. Parrinello, G. Pensl, E. Pereira, P. Perlin, J. Petalas, W. Pfeiffer, M.C. Phillips, F.G Pikus, I. Pinter, M. Pirzer, U. Pohl, U.W. Pohl, H.M. Polatoglou, A. Polian, R. Polini, B.E. Ponga, J.L. Ponthenier, S. Porowski, J.F. Prins, K.A. Prior, J. Puls, J. Qiu, A. Qteish, G. Raciukaitis, L. Reining, T. Reisinger, M. Restle, M. Righini, P. Rodríguez-Hernández, S.J. Rolfe, R. Romestain, VD. Ryzhikov, B. Sailer, D. Sander, L. Santos, T. Sasaki, M. Sawada, G. Scamarcio, M.A. Scarselli, M. Schadt, A. Schneider, J. Schneider, A. Schöner, A. Schülzgen, S. Selci, M. Shinohara, J. Simpson, L. Sorba, B. Spellmeyer, R.P. Stanley, H. Stanzl, R.A. Stein, H. Stewart, I. Suemune, G. Sulzer, T. Suski, W. Suttrop, J.F. Swenberg, M.R. Taghizadeh, S. Takeyama, T.L. Tansley, A. Tebano, P. Thurian, E. Tosatti, C. Trager-Cowan, N. Troullier, I. Tschentscher, N. Tsuboi, A. Tsujimura, K. Tsukioka, P.A. Tupenevich, K.F. Turner, H. Uchiki, M. Uhrmacher, B. Ullrich, D. Uttamchandani, C.G. Van de Walle, J. van der Weide, J.M. Van Hove, D. Vanderbilt, L. Vanzetti, D. Vasileska, J.C. Vial, H.P. Wagner, U. Wahl, H. Waldmann, CT. Walker, E.G. Wang, M.W. Wang, S.Y. Wang, Y. Wang, V. Weinhold, T. Wiehert, C. Wild, W. Witthuhn, H. Wolf, K. Wolf, M. Wörz, G.P. Yablonskii, M. Yagi, S. Yamaga, M. Yamanaka, F. Yang, S. Yoshii, A. Yoshikawa, X. Yu, W. Zeitz, L.G. Zimin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d96fb2c6f3c62ae9faa940cfe8d35d9e
https://doi.org/10.1016/b978-0-444-81573-6.50099-2
https://doi.org/10.1016/b978-0-444-81573-6.50099-2
Autor:
Olivier Briot, M. Averous, Thierry Cloitre, B.E. Ponga, Bernard Gil, Roger Aulombard, J. Calas
Publikováno v:
MRS Proceedings. 263
It has been recently shown that high quality ZnSe and ZnTc filns can be grown on GaAs using low temperature growth techniques such as Metal-Organic Chemical Vapor Deposition ( MOCVD). All samples: ZnSe, ZnTe, ZnSc(l−x)Tc(x) epilayers and ZnSe/ZnTc
Publikováno v:
Japanese Journal of Applied Physics. 32:147
ZnSe/ZnTe strained-layer short period superlattices have been grown by MOVPE. Using well adapted buffer layers, we could tune the internal built-in strain of the individual layers. We studied both free standing superlattices and strained-layer superl
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