Zobrazeno 1 - 10
of 32
pro vyhledávání: '"B.E. Maile"'
Publikováno v:
Proceedings of 8th International Conference on Indium Phosphide and Related Materials.
A family of one, two and three stage monolithic amplifiers on InP substrate for W-band applications are presented. The circuits are realized with lattice matched InAlAs-InGaAs-InP HEMTs with a gate-width of W/sub G/=2/spl times/40 /spl mu/m and T-gat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c96755183bb91c55e4692644347afe53
https://doi.org/10.1109/iciprm.1996.491937
https://doi.org/10.1109/iciprm.1996.491937
Autor:
M. Berg, D. Kother, B. Hopf, Hans L. Hartnagel, B.E. Maile, J. Dickmann, T. Hackbarth, S. Kosslowski
Publikováno v:
Proceedings of 8th International Conference on Indium Phosphide and Related Materials.
An active coplanar circulator for Q-band operation based on lattice matched InAlAs/InGaAs/InP HFETs has been designed and fabricated. The active devices have a gate-width of W/sub G/=6/spl times/20 /spl mu/m and T-gates with a gate-length of L/sub G/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d331649a35164c4dcea58afa3175225
https://doi.org/10.1109/iciprm.1996.491936
https://doi.org/10.1109/iciprm.1996.491936
Publikováno v:
Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).
A systematic investigation on the breakdown mechanisms in the on-state mode of operation of pseudomorphic InAlAs/In/sub x/Ga/sub 1-x/As (0.53 >
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f64c0ad45f15ff84bede657fdf2b2da
https://doi.org/10.1109/iciprm.1994.328238
https://doi.org/10.1109/iciprm.1994.328238
Publikováno v:
Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387).
A Leica EBPG-5000 TFE electron beam lithography system has been evaluated and optimized. Sources of beam positional noise have been eliminated, resulting in an effectively useable spot size of less than 6 nm. Hydrogen silsesquioxane (HSQ) negative re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e201ae1cb5f114c2a8ac2bfbf91a541
https://doi.org/10.1109/imnc.2000.872743
https://doi.org/10.1109/imnc.2000.872743
Autor:
B.E. Maile, S. Kosslowski, P. Narozny, Ingo Wolff, A. Schurr, H. Haspeklo, C. Wolk, H. Dambkes, Jurgen Dickmann, A. Geyer
Publikováno v:
1993 23rd European Microwave Conference.
This paper demonstrates a comparison of two three-stage Ka-Band amplifiers in CPW-technique. The first MMIC is based on AlGaAs/GaAs HEMT devices with a gate length of 0.25?m. The second MMIC is realized with 0.25?m InAlAs/InGaAs HEMT devices on InP.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dead079b968ad7a45aab9abe3ff6d76
https://doi.org/10.1109/euma.1993.336824
https://doi.org/10.1109/euma.1993.336824
Autor:
S. Heuthe, H. Haspeklo, J. Bottcher, K. Riepe, A. Schurr, H. Daembkes, S. Kosslowski, H. Kunzel, B.E. Maile, A. Geyer, J. Dickmann
Publikováno v:
Electronics Letters. 29:493
A three stage 28 GHz InP MMIC coplanar waveguide amplifier with 27 dB gain over the frequency band from 26 to 32 GHz has been developed. The circuit is fully passivated with Si/sub 3/N/sub 4/ and includes all necessary elements for input/output match
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3b2a32fb271b9fba4a32e089455c6b9
https://doi.org/10.1049/el:19930330
https://doi.org/10.1049/el:19930330
Autor:
B.E. Maile, R. Losch, Jurgen Dickmann, H. Daembkes, H. Haspeklo, K. Riepe, H. Nickel, W. Schlapp
Publikováno v:
Electronics Letters. 28:1849
The process technology of fully passivated T-shaped 0.18 μm gate length InAlAs/GaAs/InP HFETs is described. Using material selective etchants, devices realised with this process yielded gate breakdown voltages in excess of 8 V and drain source break
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8df8442625b418acc4ebe290e656157
https://doi.org/10.1049/el:19921179
https://doi.org/10.1049/el:19921179
Autor:
B.E. Maile, A. Forchel, R. Germann, A. Menschig, K. Streubel, F. Scholz, G. Weimann, W. Schlapp
Publikováno v:
Microelectronic Engineering. 6:163-168
Starting from GaAs/AlGaAs and InGaAs/InP quantum well structures, we have produced quantum wires with lateral dimensions down to 30nm, using direct electron beam writing and several dry etching techniques. Investigating the photoluminescence efficien
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fec9e20ef1be1fb7de239299ee37c15
https://doi.org/10.1016/0167-9317(87)90032-3
https://doi.org/10.1016/0167-9317(87)90032-3
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Akademický článek
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