Zobrazeno 1 - 10
of 80
pro vyhledávání: '"B.C. Qiu"'
Autor:
A. Boyd, M.L. Ke, Olek P. Kowalski, B.C. Qiu, Xuefeng Liu, R.M. De La Rue, Craig James Hamilton, Stewart D. McDougall, John H. Marsh, Y.H. Qian, B.D. Allan, A.C. Bryce
Publikováno v:
Optical Materials. 14:193-196
The design and operation of long wavelength ridge waveguide distributed Bragg reflector lasers in both InGaAs–InGaAlAs and InGaAs–InGaAsP materials with deeply dry-etched surface gratings are presented. To our knowledge, quantum well intermixing
Autor:
Stewart D. McDougall, A. McKee, B.C. Qiu, Olek P. Kowalski, A.C. Bryce, R.M. De La Rue, Craig James Hamilton, John H. Marsh
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:810-816
Precise control over local optical and electrical characteristics across a semiconductor wafer is a fundamental requirement for the fabrication of photonic integrated circuits. Quantum well intermixing is one approach, where the band gap of a quantum
Autor:
John H. Marsh, I.G. Thayne, Chester Shu, V. Loyo-Maldonado, A.C. Bryce, S. Pinches, H.K. Lee, K.L. Lee, B.C. Qiu
Publikováno v:
IEEE Photonics Technology Letters. 14:1049-1051
Colliding pulse mode-locked (CPM) lasers operating at 1.5 /spl mu/m and 36-GHz repetition frequency were fabricated on semi-insulating substrates. An RF electrical signal at a repetition rate of 36 GHz was injected into the saturable absorber and hyb
Autor:
Xuefeng Liu, M.L. Ke, H.K. Lee, A.C. Bryce, J.S. Aitchison, John H. Marsh, B.C. Qiu, C.B. Button
Publikováno v:
IEEE Photonics Technology Letters. 13:1292-1294
In this letter, we report the fabrication of 2 /spl times/ 2 crosspoint switches, which monolithically integrate passive waveguides, electro-absorption modulators and optical amplifiers onto one chip using sputtered SiO/sub 2/ quantum-well intermixin
Autor:
John M. Arnold, B.C. Qiu, R.M. De La Rue, Lianping Hou, A.C. Bryce, Marc Sorel, Anthony Kelly, P. Stolarz, John H. Marsh, R. Dylewicz, M. Haji
Publikováno v:
Conference on Lasers and Electro-Optics 2010.
We fabricated 40 GHz passively mode-locked AlGaInAs/InP 1.55 µm lasers integrated with surface-etched distributed Bragg mirrors. Numerically optimized gratings provide low loss and accurate wavelength control. The lasers produce 10-ps Gaussian-pulse
Publikováno v:
IEEE Photonics Technology Letters. 12:1141-1143
A useful development of the sputtered SiO/sub 2/ intermixing technique is reported, which uses a single stage of sputtered SiO/sub 2/ deposition and annealing to achieve precise tuning of the bandgap energy in the InGaAs-AlInGaAs material system. The
Autor:
Y.H. Qian, Richard V. Penty, B.C. Qiu, Ivan Andonovic, John H. Marsh, R.M. De La Rue, Olek P. Kowalski, J.S. Aitchison, David K. Hunter, M. Owen, Andre Franzen, A.C. Bryce, Ian H. White
Publikováno v:
IEEE Photonics Technology Letters. 12:287-289
We report the fabrication of a 2/spl times/2 crosspoint switch, which monolithically integrates passive waveguides and electroabsorption modulators on one chip, using the sputtered SiO/sub 2/ technique for quantum-well intermixing. The static perform
Publikováno v:
Scopus-Elsevier
We report on the design and fabrication of high performance 800-1000 nm high power lasers using an asymmetric waveguide structure. The structure offers lower beam divergence, improved power kink and reduced resistively.
Publikováno v:
IEEE Photonics Technology Letters. 10:769-771
We report the use of a laser irradiation process, which combines irradiation by continuous wave and Q-switched pulsed Nd:YAG lasers, to promote quantum-well intermixing. Differential shifts up to 70 meV have been obtained in GaInAsP structures. Exten
Publikováno v:
International Conference on Indium Phosphide and Related Materials, 2005..
This paper describes the fabrication of extended cavity lasers (ECLs) with improved performance in InGaAs/InGaAsP/InP multiple quantum wells (MQWs) materials using a combination of quantum well intermixing (QWI) and dopant or defect passivation by at