Zobrazeno 1 - 10
of 85
pro vyhledávání: '"B.C. Burkey"'
Autor:
Teh-Hsuang Lee, Yung-Rai R. Lee, B.C. Burkey, Charles V. Stancampiano, Georgia R. Torok, James P. Lavine, Eric G. Stevens, R.P. Khosla, David Newell Nichols, Stephen L. Kosman, David L. Losee
Publikováno v:
International Journal of Imaging Systems and Technology. 5:323-329
Two interline, 30 frames/second, high-resolution image sensors are described that use two-phase charge coupled device (CCD) technology. One is a two-megapixel, interlaced high-definition television, sensor, and the other is a 1-megapixel, progressive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a70cd91e7461f693fa49a6a559afc9a
https://doi.org/10.1002/ima.1850050412
https://doi.org/10.1002/ima.1850050412
Publikováno v:
IEEE Transactions on Electron Devices. 39:2508-2514
The effects of a smearing signal on the dynamic range and the amount of antiblooming protection of an interline CCD image sensor are presented. It is shown that there is a tradeoff between these two parameters, and that they are directly related by t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7491e2be7f01298836ac1a58e6bb1202
https://doi.org/10.1109/16.163449
https://doi.org/10.1109/16.163449
Publikováno v:
Materials Science Forum. :499-504
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcdebf02dcf1347e4c3438918e708e20
https://doi.org/10.4028/www.scientific.net/msf.83-87.499
https://doi.org/10.4028/www.scientific.net/msf.83-87.499
Publikováno v:
IEEE Transactions on Electron Devices. 38:1162-1174
Charge transfer in buried-channel charge-coupled devices (CCDs) is explored with a one-dimensional numerical model which describes the capture and emission of electrons from a shallow donor level in silicon through the use of the Shockley-Read-Hall g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0a7467bf722ec06f1eca7b3158029d0
https://doi.org/10.1109/16.78394
https://doi.org/10.1109/16.78394
Autor:
James P. Lavine, J.C. Cassidy, David L. Losee, B.C. Burkey, Gilbert Alan Hawkins, A.K. Weiss, E.A. Trabka, W.C. McColgin, G. Geisbuesch, R.P. Khosla, Edward T. Nelson, Madhav Mehra
Publikováno v:
IEEE International Solid-State Circuits Conference.
The authors report results obtained on a full-color interline transfer CCD (charged-coupled device) image sensor with pixel dimensions of 8.6 mu m(H)*6.8 mu m(V) using 1.2- mu m design rules and a two-phase, single-polysilicon-per-phase technology. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44348dc725a8590186a2b43a45c2be2f
https://doi.org/10.1109/isscc.1989.48194
https://doi.org/10.1109/isscc.1989.48194
Autor:
Teh-Hsuang Lee, Win-Chyi Chang, B.C. Burkey, Kwok Y. Wong, G. R. Moore, David L. Losee, R.P. Khosla
Publikováno v:
International Symposium on VLSI Technology, Systems and Applications.
The authors have developed an ultra-high-resolution, full-frame CCD imager of 2048*2048 pixels. The pixel size is 9 mu m*9 mu m. The sensor has dual readout registers to increase the data rate. It is designed for a horizontal clock rate of 20 MHz. Wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::334e66e03b87092e78ddc6f34534d11b
https://doi.org/10.1109/vtsa.1989.68578
https://doi.org/10.1109/vtsa.1989.68578
Autor:
Y. Yee, Eric G. Stevens, Timothy J. Tredwell, R.P. Khosla, David Newell Nichols, Teh-Hsuang Lee, David L. Losee, B.C. Burkey
Publikováno v:
International Technical Digest on Electron Devices Meeting.
A 1024*1024 IL CCD (charge coupled device) image sensor has been developed that incorporates antiblooming and electronic exposure control while eliminating lag and obtaining a high responsivity. The incorporation of the antiblooming structure and ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4fac3664a6be0754b801d0b83399571
https://doi.org/10.1109/iedm.1989.74253
https://doi.org/10.1109/iedm.1989.74253
Autor:
Stephen L. Kosman, Teh-Hsuang Lee, B.C. Burkey, Wesley A. Miller, Madhav Mehra, Win-Chyi Chang, Gilbert Alan Hawkins, R.P. Khosla, Paul L. Roselle, J.C. Cassidy, Eric G. Stevens
Publikováno v:
International Technical Digest on Electron Devices.
A large-area, 1.3 million pixel, full-frame CCD (charge coupled device) image sensor has been developed that incorporates both a lateral-overflow drain (LOD) for antiblooming control and a transparent indium-tin oxide (ITO) gate electrode for increas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13752946c742acd41549e2ec904c3757
https://doi.org/10.1109/iedm.1990.237173
https://doi.org/10.1109/iedm.1990.237173
Autor:
Edmund K. Banghart, B.C. Burkey, E.A. Trabka, Eric G. Stevens, David J. Schneider, James P. Lavine
Publikováno v:
MRS Proceedings. 490
The three-dimensional Poisson's equation is solved by iterative methods and the resulting electric field is used in Newton's equation to simulate electron transfer in a charge-coupled device (CCD). The time dependence of charge transfer is studied th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c68c04155300800b8d53ff94fb2c746d
https://doi.org/10.1557/proc-490-251
https://doi.org/10.1557/proc-490-251
Autor:
Y. Yee, Tom H. Lee, B.C. Burkey, David L. Losee, R.P. Khosla, Eric G. Stevens, David Newell Nichols
Publikováno v:
Charge-Coupled Devices and Solid State Optical Sensors.
A 1024 x 1024 pixel, interline charge-coupled device (IL CCD) image sensor has been developed that incorporates antiblooming and electronic exposure control while eliminating lag and obtaining a high responsivity. Of the novel features of this device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e09960d23b6354067968a2adfbd331a0
https://doi.org/10.1117/12.19430
https://doi.org/10.1117/12.19430