Zobrazeno 1 - 10
of 96
pro vyhledávání: '"B.. Grimbert"'
Autor:
C. Morelle, D. Théron, I. Roch-Jeune, P. Tilmant, E. Okada, F. Vaurette, B. Grimbert, J. Derluyn, S. Degroote, M. Germain, M. Faucher
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 2023, 122 (3), pp.033502. ⟨10.1063/5.0127987⟩
Applied Physics Letters, 2023, 122 (3), pp.033502. ⟨10.1063/5.0127987⟩
International audience; We report on an accelerometer micro-sensor based on epitaxial gallium nitride and silicon. The device is a vibrating beam accelerometer fabricated with a micro-electro-mechanical-system technology starting from an AlGaN/GaN he
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::811eb8872613848528d11b24ba8a8f85
http://hdl.handle.net/20.500.12210/80829
http://hdl.handle.net/20.500.12210/80829
Autor:
Christophe Gaquiere, J. A. Novoa, Guillaume Ducournau, Ignacio Iniguez-de-la-Torre, Javier Mateos, Tomas Gonzalez, H. Sanchez-Martin, B. Grimbert, S. Sanchez-Martin, Susana Perez
Publikováno v:
Semiconductor Science and Technology
Semiconductor Science and Technology, IOP Publishing, 2018, 33 (9), pp.095016. ⟨10.1088/1361-6641/aad766⟩
GREDOS. Repositorio Institucional de la Universidad de Salamanca
instname
Semiconductor Science and Technology, 2018, 33 (9), pp.095016. ⟨10.1088/1361-6641/aad766⟩
Semiconductor Science and Technology, IOP Publishing, 2018, 33 (9), pp.095016. ⟨10.1088/1361-6641/aad766⟩
GREDOS. Repositorio Institucional de la Universidad de Salamanca
instname
Semiconductor Science and Technology, 2018, 33 (9), pp.095016. ⟨10.1088/1361-6641/aad766⟩
International audience; GaN based self-switching diodes (SSDs) have been fabricated for the first time on SiC substrate. They have been characterized as RF power detectors in a wide frequency range up to 220 GHz, showing a cutoff frequency of about 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c6996d9b123d4528774c000ce2b6f9ec
https://hdl.handle.net/10366/138156
https://hdl.handle.net/10366/138156
Akademický článek
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Autor:
L.. Hu, W.. Fan, A.K.. K. Wong, K.. Wong, T.C.. C. Judd, B.. Grimbert, Q.. Wang, J.C.. C. Palacio
Publikováno v:
All Days.
A field development project in the central part of the Ordos Basin began in 2011 with the intent to develop commercial production from the two main gas producing intervals. The gas layers within the Shihezi and Shanxi Formation within the South Sulig
Autor:
Malek Zegaoui, Farid Medjdoub, Astrid Linge, Riccardo Silvestri, Gaudenzio Meneghesso, B. Grimbert, Enrico Zanoni, Matteo Meneghini
Publikováno v:
Solid-State Electronics
Solid-State Electronics, 2015, 113, pp.49-53. ⟨10.1016/j.sse.2015.05.009⟩
Solid-State Electronics, Elsevier, 2015, 113, pp.49-53. ⟨10.1016/j.sse.2015.05.009⟩
Solid-State Electronics, 2015, 113, pp.49-53. ⟨10.1016/j.sse.2015.05.009⟩
Solid-State Electronics, Elsevier, 2015, 113, pp.49-53. ⟨10.1016/j.sse.2015.05.009⟩
International audience; We report on AlN/GaN double heterostructures for high frequency applications. 600 h preliminary reliability assessment has been performed on these emerging RF devices, showing promising millimeter-wave 100 nm gate length GaN-o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::01a017cf6192b66dfa70c609cf9c2775
http://hdl.handle.net/11577/3183756
http://hdl.handle.net/11577/3183756
Autor:
B. Grimbert, Nathalie Rolland, Farid Medjdoub, Malek Zegaoui, N. Waldhoff, Paul-Alain Rolland
Publikováno v:
IEEE Electron Device Letters
IEEE Electron Device Letters, 2011, 32 (9), pp.1230-1232. ⟨10.1109/LED.2011.2161261⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2011, 32, pp.1230-1232. ⟨10.1109/LED.2011.2161261⟩
IEEE Electron Device Letters, 2011, 32 (9), pp.1230-1232. ⟨10.1109/LED.2011.2161261⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2011, 32, pp.1230-1232. ⟨10.1109/LED.2011.2161261⟩
Microwave noise performance of state-of-the-art AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100-mm Si substrate has been investigated. DC and RF measurements show the outstanding potential of this structure for high-power millimeter-w
Autor:
Matteo Meneghini, Damien Ducatteau, Etienne Okada, Riccardo Silvestri, Gaudenzio Meneghesso, Enrico Zanoni, B. Grimbert, Farid Medjdoub
Publikováno v:
ESSDERC
ESSDERC 2014-44th European Solid State Device Research Conference
ESSDERC 2014-44th European Solid State Device Research Conference, Sep 2014, Venice Lido, France. pp.146-149, ⟨10.1109/ESSDERC.2014.6948779⟩
ESSDERC 2014-44th European Solid State Device Research Conference, Sep 2014, Venice Lido, Italy. pp.146-149, ⟨10.1109/ESSDERC.2014.6948779⟩
ESSDERC 2014-44th European Solid State Device Research Conference
ESSDERC 2014-44th European Solid State Device Research Conference, Sep 2014, Venice Lido, France. pp.146-149, ⟨10.1109/ESSDERC.2014.6948779⟩
ESSDERC 2014-44th European Solid State Device Research Conference, Sep 2014, Venice Lido, Italy. pp.146-149, ⟨10.1109/ESSDERC.2014.6948779⟩
We report on AlN/GaN double heterostructures for high frequency applications. 600 hours preliminary reliability assessment has been performed on these emerging RF devices, showing promising millimeter-wave 100 nm gate length GaN-on-Si device stabilit
Autor:
A. Minko, Sylvain Delage, J.C. De Jaeger, Philippe Bove, Christophe Gaquiere, Hacene Lahreche, Virginie Hoel, Damien Ducatteau, B. Grimbert, Erwan Morvan, E. Delos
Publikováno v:
IEEE Electron Device Letters. 27:7-9
Microwave frequency capabilities of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon (111) substrate for power applications are demonstrated in this letter. A maximum dc current density of 1 A/mm and an extrinsic current
Autor:
Riccardo Silvestri, Nathalie Rolland, B. Grimbert, Damien Ducatteau, Enrico Zanoni, Gaudenzio Meneghesso, Y. Tagro, Matteo Meneghini, Farid Medjdoub
Publikováno v:
Proceedings of 2013 IEEE International Reliability Physics Symposium, IRPS 2013
IEEE International Reliability Physics Symposium, IRPS 2013
IEEE International Reliability Physics Symposium, IRPS 2013, 2013, Monterey, CA, United States. paper 3C.3, 6 p., ⟨10.1109/IRPS.2013.6531985⟩
IEEE International Reliability Physics Symposium, IRPS 2013
IEEE International Reliability Physics Symposium, IRPS 2013, 2013, Monterey, CA, United States. paper 3C.3, 6 p., ⟨10.1109/IRPS.2013.6531985⟩
In this paper, an emerging double heterostructure high electron mobility transistor (DHFET) based on AlN/GaN/AlGaN grown on silicon substrate is presented. This configuration system allowed state-of-the-art GaN-on-silicon DC, RF output power and nois
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cdfd0a969c47ab8dc38ff170c23f96a0
https://hal.archives-ouvertes.fr/hal-00877718
https://hal.archives-ouvertes.fr/hal-00877718
Autor:
A. Minko, V. Hoel, E. Morvan, B. Grimbert, A. Soltani, E. Delos, D. Ducatteau, C. Gaquiere, D. Theron, J.C. De Jaeger, H. Lahreche, L. Wedzikowski, R. Langer, P. Bove
Publikováno v:
IEEE Electron Device Letters. 25:453-455
AlGaN-GaN high electron mobility transistors (HEMTs) on silicon substrate are fabricated. The device with a gate length of 0.3-/spl mu/m and a total gate periphery of 300 /spl mu/m, exhibits a maximum drain current density of 925 mA/mm at V/sub GS/=0