Zobrazeno 1 - 10
of 32
pro vyhledávání: '"B.-U. Klepser"'
Autor:
Wolfgang Thomann, E. Rampf, Bernd Eisener, Bernhard Sogl, W. Bakalski, B. Kapfelsperger, Ewa Napieralska, W. Osterreicher, J. Berkner, Markus Zannoth, B.-U. Klepser, Arpad L. Scholtz, Michael Asam, Siegfried Marcon
Publikováno v:
IEEE Journal of Solid-State Circuits. 43:1920-1930
A standard-compliant integrated quad-band GSM/EDGE radio frequency power amplifier for 824-915 MHz and 1710-1910 MHz has been realized in a 0.35-mum SiGe-Bipolar technology. The chip integrates two single-ended three-stage power amplifiers and contro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62158e6c4110059f54a0b6a1e7ebf8b4
https://doi.org/10.1109/jssc.2008.2002337
https://doi.org/10.1109/jssc.2008.2002337
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 44:2379-2383
Variable gain mm-wave amplifiers, based on InP high-electron mobility transistor (HEMT) devices, are demonstrated. The two-stage circuits consist of a single-gate (SG) and dual-gate (DG) transistor. The influence of the gate recess depth on the gain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f554d1cea36b9ff7bbd9a28481014389
https://doi.org/10.1109/22.554565
https://doi.org/10.1109/22.554565
Autor:
E. Rampf, B. Kapfelsperger, Bernd Eisener, J. Berkner, Markus Zannoth, B.-U. Klepser, Winfried Bakalski, Michael Asam, W. Osterreicher, Bernhard Sogl, Arpad L. Scholtz
Publikováno v:
2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
A standard-compliant integrated quad-band GSM/EDGE radio frequency power amplifier for 824-915MHz and 1710-1910MHz has been realized in a 0.35-mum SiGe-Bipolar technology. The chip integrates two single-ended 3-stage power amplifiers and a bias-contr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7f836d7e2ccf7f834bdc217084436d9
https://doi.org/10.1109/bipol.2007.4351846
https://doi.org/10.1109/bipol.2007.4351846
Publikováno v:
RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE Radio Frequency integrated Circuits.
A GPRS RF solution using sigma-delta modulation and an EDGE RF solution using digital polar modulation are presented. The single-chip, quad-band transceivers have been implemented in a 0.13 /spl mu/m CMOS technology. The lock-in time of the sigma-del
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fede5d730de42c391ba725f8661f33e8
https://doi.org/10.1109/rfic.2005.1489780
https://doi.org/10.1109/rfic.2005.1489780
Autor:
M.E. Kim, Chun-Wen Huang, D. Mathews, B.-U. Klepser, S. Kovacic, W. Oesterreicher, W. Vaillancourt, P. Heide, S. Yair, A. Biran, N. Mellen, Yongxi Qian, M. Zannoth, M. Comerford, K. Gallagher, Robert Weigel, Clemens Ruppel, T. Rueldicke
Publikováno v:
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05c873e8295bb1fa4a80b335b3592042
https://doi.org/10.1109/rfic.2004.1320713
https://doi.org/10.1109/rfic.2004.1320713
Publikováno v:
ESSCIRC 2004 - 29th European Solid-State Circuits Conference (IEEE Cat. No.03EX705).
A fully integrated radio transceiver chip for the 2.4 and 5 GHz WLAN standards 802.11a/b/g is presented in a 0.25 /spl mu/m 40 GHz BiCMOS technology. The chip integrates the LNAs, mixers, channel filters, PGC, synthesizers with VCOs and reference osc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7526802a01af137d40b59efff3272b6
https://doi.org/10.1109/esscirc.2003.1257114
https://doi.org/10.1109/esscirc.2003.1257114
Publikováno v:
Electronics Letters. 31:1351-1353
Integrated single-stage amplifiers with different matching networks have been fabricated and compared, using 0.25 /spl mu/m indium phosphide high electron mobility transistors (InP-HEMT) and gain as high as 9.1 dB at 64 GHz and 10.5 dB at 44 GHz. And
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e71d989f0c030bd646b2b2cca7b4e7fb
https://doi.org/10.1049/el:19950934
https://doi.org/10.1049/el:19950934
Publikováno v:
IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003.
A fully monolithic dual-band radio transceiver chip for 802.11a, 802.11b and 802.11g applications is presented in a 0.25 /spl mu/m 40 GHz BiCMOS technology. The transceiver chip contains a complete receiver chain with low noise amplifier, mixer, prog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c20d85dee0d1014fda974e54e890be7b
https://doi.org/10.1109/rfic.2003.1213888
https://doi.org/10.1109/rfic.2003.1213888
Publikováno v:
56th Annual Device Research Conference Digest (Cat. No.98TH8373).
The growing market for /spl lambda/=850 nm data links that operate at bit rates >1 Gbit/sec has increased the interest in Si-based monolithically integrated photoreceivers due to the reduced cost arising from their compatibility with existing Si manu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfea5b72f15784a7d2cecf677adeb6ba
https://doi.org/10.1109/drc.1998.731121
https://doi.org/10.1109/drc.1998.731121
Publikováno v:
Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95.
The design, fabrication, and the measured results of V-band monolithically integrated fundamental oscillators are presented. The active device is a 0.2 /spl mu/m InP based HEMT with f/sub max/=200 GHz and f/sub t/=100 GHz. A basic V-band oscillator,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bf3f5beb2e4a6680a8c098a82d8304b
https://doi.org/10.1109/edmo.1995.493712
https://doi.org/10.1109/edmo.1995.493712