Zobrazeno 1 - 10
of 120
pro vyhledávání: '"B. von Roedern"'
Publikováno v:
Vacuum. 82:1145-1150
Recent developments in the photovoltaic (PV) industry, driven by a shortage of solar grade Si feedstock to grow Si wafers or ribbons, have stimulated a strong renewed interest in thin-film technologies and in particular in solar cells based on protoc
Autor:
J.A. del Cueto, B. von Roedern
Publikováno v:
Progress in Photovoltaics: Research and Applications. 14:615-628
Thin-film cadmium telluride (CdTe) photovoltaic (PV) technology is poised to begin making significant contributions and impact on terrestrial, electric power generation. However, some outstanding issues such as stability and transient behavior, and t
Publikováno v:
Materials Letters. 59:1085-1088
Thin films of depleted uranium dioxide were made using the sol–gel approach. Films were deposited onto sapphire and MgO substrates that were 0.1 mm thick. Film thickness ranged from 1540 A to 2470 A. Intrinsic films were made as were films doped wi
Autor:
William N. Shafarman, M. E. Beck, B. von Roedern, David L. Young, L. Chen, M. D. Gonzalez, B. J. Stanbery, Ingrid Repins, Xuege Wang, Alan E. Delahoy, D. Tarrant, V. K. Kapur, Sheng S. Li, Brian Keyes, Timothy J. Anderson, L. L. Kerr, Craig L. Perkins, Sally Asher, D. G. Jensen, Wyatt K. Metzger
Publikováno v:
Progress in Photovoltaics: Research and Applications. 14:25-43
We report the results of an extensive study employing numerous methods to characterize carrier transport within copper indium gallium sulfoselenide (CIGSS) photovoltaic devices, whose absorber layers were fabricated by diverse process methods in mult
Autor:
B. von Roedern, Thomas T. Meek
Publikováno v:
Vacuum. 83:226-228
Recent investigations of the semiconductive properties of urania indicate that the oxides of uranium may be useful in the fabrication of certain active electronic devices. UO 2 and U 3 O 8 have been characterized as to their photo-optical properties
Publikováno v:
Progress in Photovoltaics: Research and Applications. 5:345-352
The four national amorphous silicon research teams held their 8th guidance team and technical team meetings in conjunction with the 25th Anniversary Symposium of the Institute of Energy Conversion at the University of Delaware. The teams were formed
Publikováno v:
Physical Review Letters. 77:4410-4413
Significant differences in the features of the electroluminescence (EL) and photoluminescence (PL) in amorphous silicon {ital p}-{ital i}-{ital n} structures have been observed. At low temperatures the EL peak energy is {approximately}0.2 eV lower th
Publikováno v:
Applied Surface Science. :716-721
The present work reports on a new modular UHV multichamber PECVD system with characteristics which prevent both the incorporation of residual impurities and cross contamination between different layers. A wide range of intrinsic and doped hydrogenate
Publikováno v:
Solar Energy Materials and Solar Cells. 26:17-26
Significant progress has been achieved in amorphous silicon photovoltaic technology since the first commercial square-foot-size modules were introduced in 1984. Over the years, quality control, materials, module size, and module packaging have improv