Zobrazeno 1 - 10
of 454
pro vyhledávání: '"B. de Salvo"'
Publikováno v:
AIP Advances, Vol 3, Iss 1, Pp 012105-012105 (2013)
The electrical properties of polycrystalline Ge2Sb2Te5 thin films containing both the metastable fcc phase and the stable hcp phase have been studied. The resistivity and its temperature dependence have been modelled using effective medium approximat
Externí odkaz:
https://doaj.org/article/4a1b159dcc7e4e6e8ced0096704974a3
Akademický článek
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Akademický článek
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Akademický článek
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Autor:
Stefano Ambrogio, Y. Ando, G. Bersuker, Chong Bi, Philippe Blaise, B. De Salvo, Jonas Deuermeier, Regina Dittmann, T. Endoh, S. Fukami, D.C. Gilmer, Ludovic Goux, T. Hanyu, Michel Harrand, Susanne Hoffmann-Eifert, Hyunsang Hwang, Cheol Seong Hwang, Daniele Ielmini, S. Ikeda, Asal Kiazadeh, H. Koike, Yunmo Koo, Luca Larcher, Seokjae Lim, Massimo Longo, Y. Ma, Stephan Menzel, Rivu Midya, Thomas Mikolajick, Gabriel Molas, Cécile Nail, H. Ohno, Andrea Padovani, Jaehyuk Park, Paolo Pavan, L. Perniola, Francesco Maria Puglisi, Mingyi Rao, Noriyuki Sato, H. Sato, R. Shirota, Jeonghwan Song, D. Suzuki, Navnidhi Kumar Upadhyay, D. Veksler, E. Vianello, Shan X. Wang, Zhongrui Wang, Rainer Waser, J. Joshua Yang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64f3ada96173237385b09ec06d42e54b
https://doi.org/10.1016/b978-0-08-102584-0.09990-3
https://doi.org/10.1016/b978-0-08-102584-0.09990-3
This chapter deals with the role that emerging nonvolatile resistive memory technologies (ReRAM) play in the implementation of optimized neuromorphic hardware as a highly promising solution for future ultralow-power cognitive systems. The chapter is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8237ec76ee71c0d2dc5dbb62a2bc665
https://doi.org/10.1016/b978-0-08-102584-0.00016-4
https://doi.org/10.1016/b978-0-08-102584-0.00016-4
Publikováno v:
Emerging Devices for Low-Power and High-Performance Nanosystems ISBN: 9780429458736
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d7eb590857ba75912a313cb073c186f
https://doi.org/10.1201/9780429458736-8
https://doi.org/10.1201/9780429458736-8
Autor:
Pierre Morin, E. Augendre, C. Le Royer, Joel Kanyandekwe, N. Bernier, Y. Morand, B. Lherron, L. Grenouillet, Oliver Faynot, J. M. Hartmann, M. Celik, James Chingwei Li, Sylvain Maitrejean, B. De Salvo, F. Chafik, Nicolas Loubet, Hong He, R. Wacquez, S. Reboh, Aomar Halimaoui, Bruce B. Doris, Qing Liu, S. Pilorget, A. Bonnevialle
Publikováno v:
ECS Journal of Solid State Science and Technology. 4:P376-P381
Converting SOI to sSOI through Amorphization and Crystallization: Material Analysis and Device Demonstration S. Maitrejean,a,z N. Loubet,b E. Augendre,a P. Morin,b S. Reboh,c N. Bernier,c R. Wacquez,a B. Lherron,b A. Bonnevialle,c,d Q. Liu,b J. M. Ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb79e1fac95c8554790af791fb631b31
https://doi.org/10.1149/2.0171509jss
https://doi.org/10.1149/2.0171509jss
Autor:
Mathieu Bernard, L. Perniola, G. Molas, Fabien Clermidy, B. De Salvo, Alain Toffoli, C. Carabasse, C. Cagli, J. Guy, A. Roule
Publikováno v:
2017 IEEE International Reliability Physics Symposium (IRPS).
In this paper, we use Kinetic Monte Carlo (KMC) simulations to investigate CBRAM variability. A full consistent model able to simulate SET, RESET, retention and endurance characteristics was proposed for the 1st time, allowing to describe experimenta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f678a852c32f9888409d262b6e4e112
https://doi.org/10.1109/irps.2017.7936384
https://doi.org/10.1109/irps.2017.7936384
Autor:
Olivier Bichler, G. Molas, E. Vianello, B. De Salvo, L. Perniola, G. Piccolboni, Daniele Garbin
Publikováno v:
Advances in Neuromorphic Hardware Exploiting Emerging Nanoscale Devices. Cognitive Systems Monographs
Advances in Neuromorphic Hardware Exploiting Emerging Nanoscale Devices. Cognitive Systems Monographs, 31, Springer Verlag, pp.109-127, 2017, ⟨10.1007/978-81-322-3703-7_6⟩
Cognitive Systems Monographs ISBN: 9788132237013
Advances in Neuromorphic Hardware Exploiting Emerging Nanoscale Devices. Cognitive Systems Monographs, 31, Springer Verlag, pp.109-127, 2017, ⟨10.1007/978-81-322-3703-7_6⟩
Cognitive Systems Monographs ISBN: 9788132237013
International audience; Oxide-based resistive memory (OxRAM) devices find applications in memory, logic, and neuromorphic computing systems. Among the different dielectrics proposed in OxRAM stacks, hafnium oxide, HfO$_2$, attracted growing interest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6785d4dba40fbc20b58c4256388c3eea
https://hal-cea.archives-ouvertes.fr/cea-01818392
https://hal-cea.archives-ouvertes.fr/cea-01818392