Zobrazeno 1 - 4
of 4
pro vyhledávání: '"B. Z. Zarina"'
Autor:
Ameer F. Roslan, F. Salehuddin, A. S. M. Zain, K. E. Kaharudin, H. Hazura, A. R. Hanim, S. K. Idris, B. Z. Zarina, Afifah Maheran A. H
This paper presents an investigation on properties of Double Gate FinFET (DG-FinFET) and impact of physical properties of FinFET towards short channel effects (SCEs) for 30 nm device, for which the depletion-layer widths of the source-drain relates t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2659::48f4faaa4518b2cce1c02f8d19256898
https://zenodo.org/record/4320380
https://zenodo.org/record/4320380
Autor:
K.E. Kaharudin, Abdul Razak Hanim, Haroon Hazura, S. K. Idris, B. Z. Zarina, Afifah Maheran A.H, Fauziyah Salehuddin, Ameer F. Roslan, Anis Suhaila Mohd Zain
Publikováno v:
Indonesian Journal of Electrical Engineering and Computer Science. 12:1358
This paper presents an investigation on properties of Double Gate FinFET (DGFinFET) and impact of physical properties of FinFET towards short channel effects (SCEs) for 30 nm device, where depletion-layer widths of the source-drain corresponds to the
Autor:
Najmiah Radiah Mohamad, Haroon Hazura, Anis Suhaila Mohd Zain, Ameer F. Roslan, K.E. Kaharudin, Afifah Maheran A. Hamid, S. K. Idris, Abdul Razak Hanim, Ibrahim Ahmad, Norhisham Mansor, A. M. Zaiton, B. Z. Zarina, Fauziyah Salehuddin
Publikováno v:
Journal of Physics: Conference Series. 1123:012048
Autor:
Ameer F Roslan, F Salehuddin, A S M Zain, Norhisham Mansor, K E Kaharudin, I Ahmad, H Hazura, A R Hanim, S K Idris, A M Zaiton, B Z Zarina, N R Mohamad, Afifah Maheran A Hamid
Publikováno v:
Journal of Physics: Conference Series; Dec2018, Vol. 1123 Issue 1, p1-1, 1p