Zobrazeno 1 - 10
of 18
pro vyhledávání: '"B. Z. Olshanetsky"'
The ordered arrays of Ag nanowires and nanodots have been grown in ultra-high vacuum on the Si(5 5 7) surface containing regular steps of three bilayer height. Formation of Ag nanostructures have been studied by scanning tunneling microscopy, low ene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d90d698288d56fe77107dc40437f035e
http://arxiv.org/abs/1903.07081
http://arxiv.org/abs/1903.07081
Publikováno v:
Journal of Crystal Growth. 404:39-43
Initial stages of the formation of Ge nanoclusters at the edges of steps in the case of the deviation of Si(1 1 1) surface in 〈−1 −1 2〉 direction were studied with the help of ultrahigh vacuum scanning tunneling microscopy under the quasi-equ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c18b7053ed896f352615fa60d5153eb
https://doi.org/10.1016/j.jcrysgro.2014.06.049
https://doi.org/10.1016/j.jcrysgro.2014.06.049
Publikováno v:
Journal of Experimental and Theoretical Physics. 113:972-982
The diffusion of strontium atoms on the Si(111) surface at room temperature has been investigated using scanning tunnel microscopy and simulation carried out in terms of the density functional theory and the Monte Carlo method. It has been found that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c9a9896677eeeb8e9b81e08e2db937a
https://doi.org/10.1134/s1063776111140202
https://doi.org/10.1134/s1063776111140202
Publikováno v:
Physics of the Solid State. 52:2577-2582
The surface structures 3 × 2, 5 × 2, 7 × 2, and 9 × 2 formed on the Si(111) plane during adsorption of submonolayer strontium have been investigated using scanning tunneling microscopy. The experimental data obtained are in agreement with the mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03df9de2628efab2ceaffc4868f2170a
https://doi.org/10.1134/s106378341012022x
https://doi.org/10.1134/s106378341012022x
Autor:
B. Z. Olshanetsky, A. E. Dolbak
Publikováno v:
Physics of the Solid State. 52:1293-1297
Diffusion of tin over the (111), (100), and (110) silicon surfaces has been studied by Auger electron spectroscopy and low-energy electron diffraction. The diffusion mechanisms have been established, and the temperature dependences of the diffusion c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b672aacab8b89b9148064ccfe72055b
https://doi.org/10.1134/s1063783410060272
https://doi.org/10.1134/s1063783410060272
Publikováno v:
Journal of Crystal Growth. 311:3898-3903
The formation of Ge nanoislands directly on Si(1 1 1) surface before the completion of a wetting layer was studied by scanning tunneling microscopy and Raman scattering spectroscopy. The mechanism of the wetting layer formation in the Ge/Si(1 1 1) sy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a66ec5ae47fa03a656d3171800aa659
https://doi.org/10.1016/j.jcrysgro.2009.06.021
https://doi.org/10.1016/j.jcrysgro.2009.06.021
Autor:
B. Z. Olshanetsky, A. E. Dolbak
Publikováno v:
Open Physics, Vol 6, Iss 3, Pp 634-637 (2008)
The effect of adsorbed Sn as a surfactant on Ge diffusion on a Si(111) surface has been studied by Low Energy Electron Diffraction and Auger Electron Spectroscopy. The experimental dependence of Ge diffusion coefficients on the Si(111) surface versus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a2633830bb9f420ef505cb43b4a8952c
https://doaj.org/article/9dfd3af518ff43d0ac6ab3e914d14fdc
https://doaj.org/article/9dfd3af518ff43d0ac6ab3e914d14fdc
Publikováno v:
Semiconductors. 41:560-563
Lead island growth on the Si (7710) surface containing steps three interplanar spacings d{sub (111)} in height and on the Si (111) singular surface was studied by scanning tunneling microscopy at room temperature. It is shown that triple steps contro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7a2a971c2104daf3ebe60b0f468c1be
https://doi.org/10.1134/s1063782607050168
https://doi.org/10.1134/s1063782607050168
Autor:
B. Z. Olshanetsky, A. E. Dolbak
Publikováno v:
Open Physics, Vol 4, Iss 3, Pp 310-317 (2006)
Ge diffusion on Si(100), (111), and (110) surfaces has been studied by Auger electron spectroscopy and low energy electron diffraction in the temperature range from 600 to 800 °C. Surface diffusion coefficients versus temperature have been measured.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae4949d8a4d3d9a3bfa2ddfaa5b51b34
https://doaj.org/article/0b9b325b9b974c5d8b4a8fcd75c6e914
https://doaj.org/article/0b9b325b9b974c5d8b4a8fcd75c6e914
Publikováno v:
Physics of the Solid State. 46:80-84
The growth of germanium nanoislands and nanowires on singular and vicinal Si(111) surfaces is investigated by scanning tunneling microscopy (STM). It is shown that the formation of a Ge wetting layer on the Si(111) surface at germanium deposition rat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac20b6775d6dfa73d098ffb5d3128510
https://doi.org/10.1134/1.1641927
https://doi.org/10.1134/1.1641927