Zobrazeno 1 - 10
of 19
pro vyhledávání: '"B. Z. Nosho"'
Autor:
Lloyd J. Whitman, Donna W. Stokes, J. H. Li, R. L. Forrest, Simon C. Moss, M. Goldenberg, B. Z. Nosho, Brian R. Bennett
Publikováno v:
Journal of Applied Physics. 93:311-315
We report the analysis of lateral composition modulation in (InAs)m/(GaSb)m superlattices by x-ray diffraction. Vertical and lateral satellite peaks for a 140 period structure were observed. The lateral modulation wavelength, average superlattice com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02a77e4622445edfe742681648a8a51f
https://doi.org/10.1063/1.1529291
https://doi.org/10.1063/1.1529291
Publikováno v:
International Journal of Quantum Chemistry. 95:561-571
We report first-principles calculations of the electronic and geometric structure of the (110) cross-sectional surfaces on InAs/GaSb superlattices and compare the results to scanning tunneling microscopy images of filled electronic states. We also st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75aee8e9501750d424d8a24c1a7dc171
https://doi.org/10.1002/qua.10687
https://doi.org/10.1002/qua.10687
Autor:
Theodorian Borca-Tasciuc, Lloyd J. Whitman, George W. Turner, M. J. Yang, Gang Chen, Ramon U. Martinelli, D. W. Song, Jerry R. Meyer, H. Lee, M.J. Manfra, Igor Vurgaftman, B. Z. Nosho
Publikováno v:
Journal of Applied Physics. 92:4994-4998
A differential 3ω technique is employed to determine the thermal conductivity of the AlAs0.07Sb0.93 ternary alloy, the Al0.9Ga0.1As0.07Sb0.93 quaternary alloy, and an (AlAs)1/(AlSb)11 digital-alloy superlattice. Between 80 and 300 K, the thermal con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e762d2909a09eb9471756291e67ade44
https://doi.org/10.1063/1.1506194
https://doi.org/10.1063/1.1506194
Publikováno v:
Journal of Applied Physics. 90:6177-6181
Peak current densities of InAs/AlSb/GaSb/AlSb/InAs resonant interband tunneling diodes (RITD) grown by molecular beam epitaxy have been measured as a function of the growth temperature. The growth procedures were designed to produce nominally identic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6adea9c87de34803dd289091ed9a13e9
https://doi.org/10.1063/1.1415539
https://doi.org/10.1063/1.1415539
Publikováno v:
Surface Science. 465:361-371
Using model GaSb–InAs heterostructures, we have systematically examined how cross-sectional scanning tunneling microscopy (XSTM) can be used for the study of III–V heterostructure interfaces. The interpretation of interfacial structure in XSTM im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::683afa162f82aef0c0277e59fa999ae3
https://doi.org/10.1016/s0039-6028(00)00732-9
https://doi.org/10.1016/s0039-6028(00)00732-9
Autor:
W. Barvosa-Carter, Lloyd J. Whitman, James C. Culbertson, Normand A. Modine, B. Z. Nosho, Efthimios Kaxiras, Hanchul Kim, Benjamin V. Shanabrook, Allan S. Bracker
Publikováno v:
Physical Review Letters. 84:4649-4652
We have determined the structure of AlSb and GaSb (001) surfaces prepared by molecular beam epitaxy under typical Sb-rich device growth conditions. Within the range of flux and temperature where the diffraction pattern is nominally $(1\ifmmode\times\
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c484bb1834af8536662c595da52b430a
https://doi.org/10.1103/physrevlett.84.4649
https://doi.org/10.1103/physrevlett.84.4649
Publikováno v:
Applied Physics Letters. 81:4452-4454
We describe a lattice of InAs nanowires that spontaneously organizes in three dimensions within an InAs/GaSb superlattice grown under high As4 flux. As characterized by x-ray diffraction and cross-sectional scanning tunneling microscopy, the periodic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::827ca829fd0ca0b30ca690717172b879
https://doi.org/10.1063/1.1526164
https://doi.org/10.1063/1.1526164
Autor:
B. V. Shanabrook, A. S. Bracker, Lloyd J. Whitman, B. Z. Nosho, James C. Culbertson, W. Barvosa-Carter, Brian R. Bennett
Publikováno v:
Applied Physics Letters. 78:2440-2442
Phase shifts in the intensity oscillation of reflection high-energy electron diffraction spots provide evidence for monolayer island formation on AlSb that is caused by sudden changes in surface stoichiometry. High-resolution scanning tunneling micro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::052ced9dab484166e1d3284cfacb6760
https://doi.org/10.1063/1.1366360
https://doi.org/10.1063/1.1366360
Autor:
Brian R. Bennett, Lloyd J. Whitman, W. H. Weinberg, W. Barvosa-Carter, B. Z. Nosho, B. V. Shanabrook
Publikováno v:
Applied Physics Letters. 74:1704-1706
Using molecular-beam epitaxy and in situ scanning tunneling microscopy, we demonstrate how different reconstructions associated with different III–V growth surfaces can create interfacial roughness, and that an understanding of this phenomenon can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb98f179c17140f24e882b50ba7bb1b3
https://doi.org/10.1063/1.123661
https://doi.org/10.1063/1.123661
Publikováno v:
Review of Scientific Instruments. 69:1403-1405
A two-dimensional ultrahigh vacuum compatible positioner is presented. The positioner uses two piezoelectric inchworms which allow for motions of up to 1 cm with a precision of 4 nm mounted at right angles to each other in order to give two dimension
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc73ad193caa2f3a0c66b9df455e4331
https://doi.org/10.1063/1.1148773
https://doi.org/10.1063/1.1148773