Zobrazeno 1 - 10
of 17
pro vyhledávání: '"B. Yefimov"'
Publikováno v:
2014 24th International Crimean Conference Microwave & Telecommunication Technology.
Autor:
V. V. Igolkin, O. Ya. Matveyev, V. B. Yefimov, A. I. Kalmykov, A. S. Gavrilenko, A. S. Kurekin
Publikováno v:
Telecommunications and Radio Engineering. 53:120-130
Autor:
V. N. Tsymbal, A. S. Kurekin, V. I. Lutsenko, Ivan S. Turgenev, V. B. Yefimov, Stanislav I. Khomenko, I.A. Kalmykov, Ye. N. Belov, A. I. Kalmykov
Publikováno v:
Telecommunications and Radio Engineering. 51:1-8
Publikováno v:
2011 MICROWAVES, RADAR AND REMOTE SENSING SYMPOSIUM.
The possibility for reliable radar detection of the sea seismic wave with very small amplitude in initial stage of its development is shown. Using "Sich-1" radar satellite data the parameters of seismic sea waves in the area of weak earthquakes near
Autor:
Yu.V. Teryokhin, G.K. Korotayev, A.S. Kurekin, P. P. Yermolov, S.S. Kavelin, V. B. Yefimov, Yu.D. Saltykov, V.I. Dranovsky, V. V. Pustovoytenko, V.N. Tsimbal
Publikováno v:
2007 17th International Crimean Conference - Microwave & Telecommunication Technology.
Considered in this paper are the basic stages of creation of oceanographic space system > and preceding researches. Possibilities of sea surface monitoring using Sich radar are analyzed. Results of the system exploitation are presented.
Publikováno v:
2006 16th International Crimean Microwave and Telecommunication Technology.
Publikováno v:
3rd International Conference on Satellite Communications (IEEE Cat. No.98TH8392).
Systems of radiocommunications for sending complex noise signals have many serious advantages. In this work the principal attention was given to methods of SO excitation both on volumetric and on surface waves in systems with wear and strong resonanc
Publikováno v:
Telecommunications and Radio Engineering. 59:12
Publikováno v:
Bulletin of Experimental Biology & Medicine; Jan2007, Vol. 143 Issue 1, p68-71, 4p
Publikováno v:
Radiation Effects. 85:243-247
The formation and complete recrystallization of an amorphous silicon layer during highly intensive Ar ion implantation have been studied. Rutherford backscattering and electron microscopy techniques have shown some specific features of such a crystal