Zobrazeno 1 - 10
of 107
pro vyhledávání: '"B. Ya. Ber"'
Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers
Publikováno v:
Semiconductors. 56:352-359
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::131bb65571aff0c8e2d157fb6bdb244d
https://doi.org/10.1134/s1063782622070077
https://doi.org/10.1134/s1063782622070077
Autor:
A. N. Anisimov, I. D. Breev, K. V. Likhachev, O. P. Kazarova, S. S. Nagalyuk, P. G. Baranov, B. Ya. Ber, D. Yu. Kazantcev, M. P. Scheglov, E. N. Mokhov
Publikováno v:
Semiconductors. 56:281-287
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::729bd1dc5a819afa97a309c8d2736069
https://doi.org/10.1134/s1063782622050025
https://doi.org/10.1134/s1063782622050025
Publikováno v:
Doklady Earth Sciences. 494:699-703
The volumetric concentration of hydrogen in two Brazilian diamonds is determined using secondary ion mass spectrometry and implantation of hydrogen into an external standard sample (with a dose of 1 × 16 at/cm2 and energy of 120 KeV). The diamonds s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c0567d9884a786be4ddb324de8e2259
https://doi.org/10.1134/s1028334x20090093
https://doi.org/10.1134/s1028334x20090093
Autor:
V. I. Kuchinskii, B. V. Pushnyi, D. Yu. Kazantsev, R. V. Levin, V. I. Vasil’ev, A. E. Marichev, B. Ya. Ber, G. S. Gagis
Publikováno v:
Technical Physics Letters. 46:961-963
When studying doped anisotypic heterostructures with Ga1 – xInxAsyP1 – y layers grown on InP substrates with an InP buffer layer by metal organic chemical vapor deposition, the presence of transition regions is revealed in the Ga1 – xInxAsyP1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cce2e19e8a222acb96120be083cd8732
https://doi.org/10.1134/s1063785020100053
https://doi.org/10.1134/s1063785020100053
Autor:
V. I. Vasil’ev, A. E. Marichev, D. Yu. Kazantsev, R. V. Levin, D. V. Chistyakov, G. S. Gagis, V. I. Kuchinskii, A. S. Vlasov, M. P. Scheglov, T. B. Popova, B. V. Pushnyi, Yu. Kudriavtsev, B. Ya. Ber
Publikováno v:
Semiconductors. 53:1472-1478
GaInPAs/InP heterostructures grown by metalorganic chemical vapor-phase deposition at a temperature of 600°C and pressure of 0.1 bar are investigated. The thicknesses of the grown GaInAsP layers amount to about 1 μm. For Ga1 –xInxP1 –yAsy solid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::789fcc671df841550b64404cdf34ab53
https://doi.org/10.1134/s106378261911006x
https://doi.org/10.1134/s106378261911006x
Autor:
V. I. Kuchinskii, M. P. Scheglov, T. B. Popova, D. Yu. Kazantsev, A. S. Vlasov, R. V. Levin, B. Ya. Ber, V. I. Vasil’ev, G. S. Gagis, D. V. Chistyakov, A. E. Marichev
Publikováno v:
Technical Physics Letters. 45:1031-1034
Luminescence properties of epilayers of Ga1 –xInxAsyP1 –y (GaInAsP) solid solutions with graded content of Group V elements (Δy up to 0.08 over a total thickness of about 1 μm) were studied at 77 and 300 K. The photoluminescence (PL) spectra of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a102d9aa2246b83c2b86a63eac06df50
https://doi.org/10.1134/s1063785019100213
https://doi.org/10.1134/s1063785019100213
Autor:
K. S. Zhuravlev, Vladimir G. Mansurov, D. Yu. Kazantsev, I. A. Aleksandrov, D. Yu. Protasov, A. A. Zaitsev, Timur V. Malin, A. S. Kozhukhov, D. S. Milakhin, B. Ya. Ber, V. E. Zemlyakov, V. I. Egorkin
Publikováno v:
Technical Physics Letters. 45:761-764
It is shown that intentionally undoped high-resistance GaN buffer layers in AlGaN/GaN heterostructures with high electron mobility for transistors can be formed by ammonia molecular beam epitaxy. The GaN growth conditions have been optimized using ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bed7b9dd9ef39c285250204ff955909c
https://doi.org/10.1134/s1063785019080108
https://doi.org/10.1134/s1063785019080108
Publikováno v:
Semiconductors. 52:1363-1368
The formation of nanostructures on the surface of GaAs under quasi-equilibrium conditions in a quasi-closed volume from saturated phosphor and indium vapors in the presence of a Au catalyst with growth according to the “vapor–liquid–crystal”
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bd7ecbed9013ae675dd40f4cac64737
https://doi.org/10.1134/s1063782618100068
https://doi.org/10.1134/s1063782618100068
Autor:
V. V. Ratnikov, D. Yu. Kazantsev, I. V. Osinnykh, K. S. Zhuravlev, M. P. Sheglov, B. Ya. Ber, Timur V. Malin
Publikováno v:
Semiconductors. 52:221-225
The deformation mode and defect structure of Al x Ga1 – xN:Si epitaxial layers (x = 0–0.7) grown by molecular beam epitaxy and doped with Si under a constant silane flux are studied by X-ray diffractometry. The concentration of Si atoms in the la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05e01f1462c46cf7cf451e232a9d29e0
https://doi.org/10.1134/s1063782618020136
https://doi.org/10.1134/s1063782618020136
Publikováno v:
Semiconductors. 52:44-52
The effect of the silicon-atom distribution profile in donor δ-layers of AlGaAs/InGaAs/AlGaAs heterostructures with donor–acceptor doping on the mobility of the two-dimensional electron gas is studied. The parameters of the δ-layer profiles are d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8d004c0e13756b6d13c24f587d96eb7
https://doi.org/10.1134/s1063782618010189
https://doi.org/10.1134/s1063782618010189