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pro vyhledávání: '"B. W. Morell"'
Autor:
J. P. McCandless, V. Protasenko, B. W. Morell, E. Steinbrunner, A. T. Neal, N. Tanen, Y. Cho, T. J. Asel, S. Mou, P. Vogt, H. G. Xing, D. Jena
Publikováno v:
Applied Physics Letters. 121:072108
We report controlled silicon doping of Ga2O3 grown in plasma-assisted molecular beam epitaxy. Adding an endplate to the Si effusion cell enables the control of the mobile carrier density, leading to over 5-orders of magnitude change in the electrical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30b2203f511e9d70776a657de8cf7c25
https://doi.org/10.1063/5.0101132
https://doi.org/10.1063/5.0101132
