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Autor:
M. Vroubel, Thanh Viet Dinh, L. F. Tiemeijer, M. Raucoules-aime, Hans Tuinhout, P. Grudowski, Ihor Brunets, B. W. C. Hovens, C. Ghidini, Nicole Wils, Guido T. Sasse, S. Dal Toso
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
High-voltage RF active and passive devices, including LDMOS, fringe capacitors, transformers and inductors with good RF performance, are required for building integrated RF power amplifiers at Watt-level in high-performance cost-effective RF front-en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44b7b468781c6c5ab18a4fb7ecc5f81a
https://doi.org/10.1109/iedm19573.2019.8993471
https://doi.org/10.1109/iedm19573.2019.8993471
