Zobrazeno 1 - 10
of 19
pro vyhledávání: '"B. W. Busch"'
Autor:
B. W. Busch, Paul M. Voyles, M. Bude, Hao Gong, David A. Muller, M.-Y. Ho, S. K. Lahiri, Petri Räisänen, M. E. Loomans, Martin L. Green, W.H. Lin, Alex See, Glen D. Wilk
Publikováno v:
Journal of Applied Physics. 93:1477-1481
We report the effects of annealing on the morphology and crystallization kinetics for the high-κ gate dielectric replacement candidate hafnium oxide (HfO2). HfO2 films were grown by atomic layer deposition (ALD) on thermal and chemical SiO2 underlay
Autor:
J.L. Grazul, M. Bude, T.W. Sorsch, Glen D. Wilk, Thierry Conard, Wilfried Vandervorst, Bert Brijs, Martin A. Green, B. W. Busch, David A. Muller, M.-Y. Ho, Petri Räisänen
Publikováno v:
Journal of Applied Physics. 92:7168-7174
A study was undertaken to determine the efficacy of various underlayers for the nucleation and growth of atomic layer deposited HfO2 films. These were compared to films grown on hydrogen terminated Si. The use of a chemical oxide underlayer results i
Autor:
F. Cosandey, Torgny Gustafsson, Safak Sayan, Eric Garfunkel, B. W. Busch, W. H. Schulte, S. Aravamudhan, G. D. Wilk
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 20:507-512
HfO2 films were grown on Si(100) by chemical vapor deposition as an attempt to develop an industrially straightforward gate dielectric deposition process. During deposition at ∼400 °C the decomposition of the hafnium-tetra-tert-butoxide Hf(C4H9O)4
Autor:
Robert L. Opila, Yves J. Chabal, B. W. Busch, David A. Muller, Olivier Pluchery, Eric Garfunkel, J. Raynien Kwo
Publikováno v:
MRS Bulletin. 27:206-211
Continued scaling of microelectronic devices is demanding that alternatives to SiO2 as the gate dielectric be developed soon. This in turn has placed enormous pressure on the abilities of physical characterization techniques to address critical issue
Autor:
B. W. Busch, Torgny Gustafsson, Angus I. Kingon, H. Schulte, Jon Paul Maria, Dwi Wicaksana, Eric Garfunkel
Publikováno v:
Journal of Applied Physics. 90:3476-3482
Gate dielectrics composed primarily of lanthana and zirconia were prepared by reactive evaporation. The stability of the layers during high temperature anneals was investigated. By controlling the oxygen partial pressure during heat treatment, lantha
Autor:
Eric Garfunkel, Gregory N. Parsons, Dennis M. Maher, Torgny Gustafsson, S. Wang, Tonya M. Klein, W. H. Schulte, James J. Chambers, B. W. Busch
Publikováno v:
Applied Surface Science. 181:78-93
X-ray photoelectron spectroscopy (XPS) and medium energy ion scattering (MEIS) are used to determine chemical bonding and composition of ultra-thin films of mixed yttrium, silicon, and oxygen, formed by oxidation of metal on clean and pre-treated sil
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 183:146-153
Medium-energy ion scattering (MEIS) has been used to characterize the composition of ultrathin gate dielectrics. Examples covering investigations on silicon-oxides and oxynitrides as well as high-dielectric constant (high- K ) films on silicon substr
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 183:88-96
The stopping power and straggling of ions in channeling and blocking directions depend on multiple scattering and impact parameter dependent effects. Therefore, the extraction of high-resolution depth profiles of single crystals based on simulation o
Autor:
Torgny Gustafsson, B. W. Busch, Gregor Schiwietz, Eric Garfunkel, W. H. Schulte, Pedro Luis Grande
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 183:16-24
The energy spectra of scattered ions in Rutherford backscattering and elastic recoil scattering experiments are commonly described using stopping power and straggling data. These, in turn, are based on statistical approximations and thus neglect the
Publikováno v:
Physical Review B. 62:R13290-R13293
The composition and atomic depth distributions of ultrathin zirconia films $(\ensuremath{\sim}30 \mathrm{\AA{}}\mathrm{})$ deposited on Si(100) have been investigated using medium-energy ion scattering (MEIS). Reoxidation in ${}^{18}{\mathrm{O}}_{2}$