Zobrazeno 1 - 10
of 65
pro vyhledávání: '"B. Van Daele"'
Autor:
L. Geenen, Thierry Conard, B. Van Daele, Wilfried Vandervorst, Alexis Franquet, Bart Berghmans
Publikováno v:
Applied Surface Science. 255:1316-1319
Reducing the energy of the primary ions will improve the depth resolution in SIMS depth profiling. At ultra low energies ( + ions, which are commonly used for their enhancement of negative secondary ion formation, and discuss the impact of these extr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ab810a5c11fee2430f251acb43db2c1
https://doi.org/10.1016/j.apsusc.2008.05.020
https://doi.org/10.1016/j.apsusc.2008.05.020
Publikováno v:
Applied Surface Science. 255:1368-1372
Single and polycrystalline Si 1− x Ge x samples have been bombarded using low energy oxygen ions to study the change in their surface morphologies and ripple formation. Both strained, relaxed and polycrystalline Si 1− x Ge x samples grown on Si(0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::788949f6a7721347a6261cc783ef772b
https://doi.org/10.1016/j.apsusc.2008.05.088
https://doi.org/10.1016/j.apsusc.2008.05.088
Publikováno v:
ECS Transactions. 10:151-160
The suitability of high-resolution X-ray diffraction (HRXRD) as an in-line measurement tool for the characterization of heterojunction bipolar transistor SiGe base layers and Si cap layers was investigated. We showed that despite of polycrystalline S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9282b47b2f2c2e483150acadd0d8e5d
https://doi.org/10.1149/1.2773985
https://doi.org/10.1149/1.2773985
Autor:
B. Van Daele, Stefan Degroote, G. Van Tendeloo, Gustaaf Borghs, Marianne Germain, Kai Cheng, Maarten Leys
Publikováno v:
Physica status solidi: C: conferences and critical reviews
In this work, GaN growth on porous Si(111) will be reported. The porosity of the substrates was 30% or 50%. In the latter case, various thicknesses, from 0.6 mu m to 10 mu m, were investigated. The morphology of the GaN surfaces was analyzed by optic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb47b4a7144b3c0a19324d4f3632ea1b
https://doi.org/10.1002/pssc.200674316
https://doi.org/10.1002/pssc.200674316
Autor:
Wolfgang Skorupa, A. D’Amore, Alessandra Satta, Trudo Clarysse, Tom Janssens, Eddy Simoen, B. Van Daele, W. Anwand
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 257:157-160
We have investigated flash-lamp annealing (FLA) of germanium wafers doped with phosphorous and boron introduced in the crystal by ion implantation. Annealing was performed by using pre-heating at 400–450 °C in a conventional rapid thermal processi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57375ea50bd7f080fbeb09a99aab4273
https://doi.org/10.1016/j.nimb.2006.12.191
https://doi.org/10.1016/j.nimb.2006.12.191
Autor:
Gustaaf Borghs, G. Van Tendeloo, Marianne Germain, Joff Derluyn, Kai Cheng, Maarten Leys, B. Van Daele, Ronnie Belmans, Steven Boeykens
Publikováno v:
physica status solidi c. 3:1579-1582
Growth of GaN on AlN nucleation layers (NL) by LP-MOVPE on 4H-SiC substrates is investigated in order to obtain high quality GaN layers for AlGaN/GaN HEMTs. The relationship between structural quality, surface morphology and electrical properties has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11669f4b5b92a9f617b870eb623040ad
https://doi.org/10.1002/pssc.200565184
https://doi.org/10.1002/pssc.200565184
Autor:
Steven Boeykens, Gustaaf Borghs, Kai Cheng, G. Van Tendeloo, Maarten Leys, B. Van Daele, Marianne Germain, Stefan Degroote, J. Engelen, Joff Derluyn
Publikováno v:
Journal of electronic materials
In this work, we report on the growth by metalorganic vapor phase epitaxy (MOVPE) of GaN layers on AlN/Si(111) templates with step-graded AlGaN intermediate layers. First, we will discuss the optimization of the AlN/Si(111) templates and then we will
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af3e7e819d7843859a0721e3de7cfa94
https://doi.org/10.1007/s11664-006-0105-1
https://doi.org/10.1007/s11664-006-0105-1
Publikováno v:
physica status solidi (c)
physica status solidi (c), Wiley, 2006, 3 (4), pp.938-941. ⟨10.1002/pssc.200564747⟩
physica status solidi (c), Wiley, 2006, 3 (4), pp.938-941. ⟨10.1002/pssc.200564747⟩
The features of CdSe/ZnSe quantum dots (QDs) grown by molecular beam epitaxy at 280 °C and 240 °C are studied by transmission electron microscopy (TEM), atomic force microscopy (AFM) and photoluminescence (PL). The epitaxial structures consist of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6586c8b579ff921a782afa53dc51dafd
https://doi.org/10.1002/pssc.200564747
https://doi.org/10.1002/pssc.200564747
Publikováno v:
Journal of crystal growth
InGaN/GaN multiple quantum wells (MQWs) were grown by metalorganic vapor phase epitaxy to quantify the influence of various growth parameters on the optical properties and on the In incorporation. Decreasing the group III flux results in improved roo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::57cbd4e19dc575c56bc8689b92f8b87e
https://doi.org/10.1016/s0022-0248(02)01847-x
https://doi.org/10.1016/s0022-0248(02)01847-x
Autor:
Eva Monroy, Ingrid Moerman, Leona C. Nistor, Mathieu Leroux, T. Palacios, B. Van Daele, Fernando Calle, Zahia Bougrioua
Publikováno v:
Physica status solidi: A: applied research
The semi-insulating character of GaN epitaxial layers can be achieved by the control of the early stages of growth on the substrate. Adding two low temperature (LT) AlN interlayers is a technique enough powerful to reduce threading dislocation densit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7f6f8517f3a02a7fee86e84dc308c4dd
https://doi.org/10.1002/pssa.200306305
https://doi.org/10.1002/pssa.200306305