Zobrazeno 1 - 10
of 83
pro vyhledávání: '"B. V. Volovik"'
Autor:
Jim Y. Chi, N. V. Kryzhanovskaya, B. V. Volovik, A. F. Tsatsul’nikov, D. S. Sizov, L. Wei, Jyh-Shyang Wang, A. R. Kovsh, V. M. Ustinov
Publikováno v:
Semiconductors. 36:997-1000
The optical properties of GaAsN/GaAs heterostructures grown by molecular-beam epitaxy with different nitrogen content in the layers have been studied. The optical properties of GaAsN layers in the growth conditions under study are defined by the carr
Autor:
B. V. Volovik, D. A. Livshits, Leonid E. Vorobjev, Vadim A. Shalygin, F. H. Julien, A.D. Andreev, V. Yu. Panevin, Marius Grundmann, Frédéric Fossard, S. N. Danilov, A. Weber, D. A. Firsov, V. M. Ustinov, Nikolai N. Ledentsov, N. K. Fedosov, Yu. M. Shernyakov, A. F. Tsatsul’nikov, A.V. Glukhovskoy
Publikováno v:
Materials Science Forum. :39-42
Results for interband and intraband absorption and emission in quantum dot structures are presented The observed peaks correspond to interband electron transitions between ground and excited states of QDs. Near infrared (λ ≃ 1 μm) lasing was obta
Autor:
N. N. Ledentsov, G. E. Cirlin, Nikolai Zakharov, Peter Werner, B. V. Volovik, V A Egorov, U. Gösele, V. M. Ustinov, A. F. Tsatsul’nikov
Publikováno v:
Nanotechnology. 12:417-420
The optical and structural properties of the Ge submonolayer nano-inclusions in a Si matrix grown by molecular beam epitaxy are investigated. It is shown that at relatively high growth temperatures >600° C new features appear in the photoluminescenc
Autor:
G. E. Cirlin, V. A. Egorov, G. Gerth, Peter Werner, B. V. Volovik, U. Gösele, Nikolai Zakharov
Publikováno v:
Materials Science and Engineering: B. 87:92-95
Multilayer structures in silicon containing submonolayers of Ge in the matrix were grown by MBE on Si substrates at different temperatures. An additional peak at 1.068 eV was observed in photoluminescence spectra (PL) from the samples grown at T=600,
Autor:
James A. Lott, A. R. Kovsh, S. S. Mikhrin, Yu. G. Musikhin, Zh. I. Alferov, A. E. Zhukov, B. V. Volovik, Yu. M. Shernyakov, Mikhail V. Maximov, Nikolai N. Ledentsov, A. F. Tsatsul’nikov, V. M. Ustinov, Dieter Bimberg, Nikolai A. Maleev
Publikováno v:
Journal of Crystal Growth. :1155-1161
Molecular beam epitaxy growth of InAs/InGaAs quantum dot (QD) structures on GaAs substrates for 1.3 μm laser applications is discussed. Long-stripe edge-emitting lasers demonstrate low threshold current density ( 2 ), high differential efficiency (>
Autor:
B. V. Volovik, A.A. Tonkikh, Yu. G. Musikhin, V. M. Ustinov, A. E. Zhukov, V. N. Petrov, N.K. Polyakov, G. E. Cirlin, V.A. Egorov, Nikolay Cherkashin
Publikováno v:
Applied Surface Science. :243-248
Optical and structural properties of heterostructures with InAs quantum dots overgrown by InGaAs quantum well and multilayer structures with InAs/GaAs quantum dots are investigated. Different growth techniques are used for the formation of an In-cont
Autor:
Dieter Bimberg, B. V. Volovik, V. M. Ustinov, Pavel N. Brunkov, R. Heitz, C. M. A. Kapteyn, A. R. Kovsh, S. G. Konnikov, M. Lion
Publikováno v:
physica status solidi (b). 224:57-60
Autor:
Peter Werner, Nikolai N. Ledentsov, U. Gösele, B. V. Volovik, Dieter Bimberg, V. N. Petrov, V. M. Ustinov, D. V. Denisov, Nikolai Zakharov, G. E. Cirlin, V. A. Egorov, Zh. I. Alferov, N. K. Polyakov, R. Heitz
Publikováno v:
Materials Science and Engineering: B. 80:108-111
MBE growth and properties of InAs nanoscale islands formed on silicon are reported. Islands capped with Si emit a photoluminescence band in the 1.3 mm region. Upon annealing at increased substrate temperature, extensive interdiffusion leads to the fo
Autor:
Dieter Bimberg, B. V. Volovik, Dagmar Gerthsen, Vitaly Shchukin, Dimitri Litvinov, Axel Hoffmann, V. M. Ustinov, N. N. Ledentsov, I.P. Soshnikov
Publikováno v:
physica status solidi (b). 224:503-508
Finite-temperature thermodynamic theory is developed for equilibrium arrays of two-dimensional monolayer-high islands in heteroepitaxial systems at submonolayer coverage. It is shown that the entropy contribution to the Helmholtz free energy of the s
Autor:
A. E. Zhukov, Wolfgang Neumann, Zh. I. Alferov, Yu. G. Musikhin, B. V. Volovik, D. S. Sizov, Nikolai N. Ledentsov, Vitaly Shchukin, Dieter Bimberg, R. Heitz, Mikhail V. Maximov, A. F. Tsatsul’nikov, A. R. Kovsh, I.N. Kaiander, S. S. Mikhrin, Victor M. Ustinov, Yu. M. Shernyakov
Publikováno v:
Physical Review B. 62:16671-16680
Strain-driven decomposition of an alloy layer is investigated as a means to control the structural and electronic properties of self-organized quantum dots. Coherent InAs/GaAs islands overgrown with an InGa(Al)As alloy layer serve as a model system.