Zobrazeno 1 - 5
of 5
pro vyhledávání: '"B. V. Rodrigues"'
Autor:
H. L. Bhat, R. Venkataraghavan, Ravi Kumar, K. S. Chandrasekaran, V. K. Dixit, B. V. Rodrigues, Brij M. Arora
Publikováno v:
Journal of Applied Physics. 90:1750-1753
Single crystal (100) wafers of n-InSb were implanted with 50 MeV Li3+ ions at various fluences ranging from 10(10) to 10(14) ions/cm(2) at room temperature. Investigations of the optical, electrical, and structural properties of the as-grown, irradia
Publikováno v:
Journal of Crystal Growth. 217:40-46
The Rotatary Bridgman method was used to grow ternary InSb(1-x)SBix, crystals. In this method the ampoule was subjected to reversible rotation at a rate of 60rpm. High quality crystals of 8mm diameter and 25mm length were grown with 6.5 atomic percen
Autor:
B. V. Rodrigues, K. S. Chandrasekaran, V. K. Dixit, H. L. Bhat, R. Venkataraghavan, Brij M. Arora
Publikováno v:
IndraStra Global.
The growth of epitaxial InSb layers on highly lattice mismatched GaAs substrates has been successfully achieved via the traditional liquid phase epitaxy. Details about nucleation, growth and optimization have been dealt with. High-resolution X-ray di
Publikováno v:
IndraStra Global.
The rapid crystallization of KH$_{2}$PO$_{4}$(KDP) from solution is demonstrated at a rate up to approximate to 7.5 mm/day along [100] and 22 mm/day along [001] in a crystallizer of 51 capacity, using accelerated crucible rotation technique (ACRT) an